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    Wyświetlanie 1-4 z 4
    Tytuł:
    The Simulation of Bragg-Case Section Images οf Dislocations and Inclusions in Aspect of Identification of Defects in SiC Crystals
    Autorzy:
    Balcer, T.
    Wierzchowski, W.
    Wieteska, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1538998.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Ff
    61.72.up
    Opis:
    The numerical simulation has been applied for studying of Bragg-case section topographic images of dislocation and rod-like inclusions. The validity of simple approximation of extinction contrast was confirmed in the case of screw dislocations in silicon carbide crystals. A procedure for approximate calculation of the strain field of rod-like inclusion was constructed, consisting of adding the contributions from a very large number of point-like inclusions uniformly distributed inside the assumed volume of the inclusion. The procedure ensured a reasonable similarity between the simulated topographs and experimental Bragg-case section topographic images of some pipe-formed cavities in silicon carbide crystals. The method is useful for some other materials, e.g. it enabled to compute realistic simulation of plane-wave topographs of the rod-like inclusions in YAG.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 336-340
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of SiC Surface Preparation on Homoepitaxial Growth; X-ray Reflectometric Studies
    Autorzy:
    Mazur, K.
    Wierzchowski, W.
    Wieteska, K.
    Hofman, W.
    Sakowska, H.
    Kościewicz, K.
    Strupiński, W.
    Graeff, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1538812.pdf
    Data publikacji:
    2010-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cm
    61.72.Ff
    61.72.up
    Opis:
    X-ray reflectometric and diffraction topographic methods were applied for examination of 4H and 6H silicon carbide substrates finished with various regimes, as well as, silicon carbide epitaxial layers. The investigations indicated a very good quality of the substrate surfaces finished with the process established at the Institute of Electronic Materials Technology, which provided the surface roughness σ = 0.55 ± 0.07 nm for 4H-SiC wafers. These values were better than those of substrate wafers offered by many commercial producers. The surface roughness was decreased during the initial high temperature etching to σ = 0.22 ± 0.07 nm. A relatively good structural quality was confirmed in the case of 4H epitaxial wafers deposited on the substrates prepared from the crystals manufactured at the IEMT, with the 8° off-cut from the main (001) plane.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 2; 272-276
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Topographic and Reflectometric Investigation of Crystallographic Defects and Surface Roughness in 4H Silicon Carbide Homoepitaxial Layers Deposited at Various Growth Rates
    Autorzy:
    Wierzchowski, W.
    Wieteska, K.
    Mazur, K.
    Kościewicz, K.
    Balcer, T.
    Strupiński, W.
    Paulmann, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1431659.pdf
    Data publikacji:
    2012-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cm
    61.72.Ff
    61.72.up
    Opis:
    Undoped 4H silicon carbide epitaxial layers were deposited by means of CVD method with growth rates of 2 μm/h, 5 μm/h and 11 μm/h at 1540°C on n-doped 8°, 4° and 0° off-cut 4H-SiC (00·1) substrates. The structural defects were studied before and after growth of the epitaxial layers by means of conventional Lang topography, synchrotron white beam and monochromatic beam topography and by means of X-ray specular reflectometry. The topographic investigations confirmed the continuation of the dislocations in the epitaxial deposit on the 8° and 4° off-cut substrates without new extended defects. The important difference occurred in the surface roughness of the epitaxial layers, which increased for higher growth rates. The epitaxial layers grown on 0° off-cut substrates at analogous condition contained usually other SiC polytypes, but the influence of the growth rate on the distribution of the polytypes was observed.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 4; 915-919
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Transmission Electron Microscopy and Luminescence Studies of Quantum Well Structures Resulting from Stacking Fault Formation in 4H-SiC Layers
    Autorzy:
    Borysiuk, J.
    Wysmołek, A.
    Bożek, R.
    Strupiński, W.
    Baranowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811916.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.37.Lp
    78.55.-m
    61.72.Nn
    68.65.Fg
    61.72.up
    Opis:
    Transmission electron microscopy and photoluminescence studies of quantum well structures related to stacking faults formation in 4H-SiC homoepitaxial layers are reported. The investigated 4H-SiC layers were deposited on 8° misoriented Si-terminated (0001) surface of high quality 4H-SiC substrate. It is found that the planar defects created by direct continuation from the SiC substrates are cubic 3C-SiC stacking faults. These defects are optically active, giving rise to characteristic luminescence band in the spectral range around 2.9 eV, which consist of several emission lines. The observed energy and intensity pattern of this emission is discussed of in terms of single, double and multiple quantum wells formed from neighboring 3C-SiC SF layers embedded in 4H-SiC material.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1067-1072
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-4 z 4

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