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Wyświetlanie 1-15 z 33
Tytuł:
Study of SrLaAlO$\text{}_{4}$ and SrLaGaO$\text{}_{4}$ Substrate Crystals by Raman Spectroscopy
Autorzy:
Drozdowski, M.
Kozielski, M.
Pajączkowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/1964243.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
78.30.-j
33.20.Fb
63.20.-e
Opis:
In this paper the study of SrLaAlO$\text{}_{4}$ and SrLaGaO$\text{}_{4}$ single crystals using the Raman scattering method is presented. The obtained results are discussed in terms of nature of the crystallografic imperfections and point defects which might arise during the crystal growth process.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 139-142
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Characterization of Materials by Raman Scattering
Autorzy:
Kozielski, M.
Powiązania:
https://bibliotekanauki.pl/articles/2047294.pdf
Data publikacji:
2007-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.-j
62.20.-x
61.72.-y
36.20.Ng
Opis:
The paper reports on the use of phonon spectra obtained with the Raman spectroscopy for characterization of different materials. The Raman scattering spectra obtained for zinc selenide crystals, mixed crystals zinc selenide admixtured with magnesium or beryllium, oxide crystals including strontium lanthanum gallate, molecular crystals of triammonium hydrogen diseleniate and a homologous series of polyoxyethylene glycols are analysed.
Źródło:
Acta Physica Polonica A; 2007, 111, 3; 343-360
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Orientation of Single Dibenzanthanthrene Molecules in Solid Xenon
Autorzy:
Sepioł, J.
Kołos, R.
Jasny, J.
Powiązania:
https://bibliotekanauki.pl/articles/1814017.pdf
Data publikacji:
2007-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
33.50.-j
61.66.Bi
61.66.Hq
61.72.Ww
Opis:
The spatial distributions of individual dibenzanthanthrene electronic transition dipole moments in solid Xe was investigated at the single molecule level, with the high-resolution fluorescence spectroscopy. Samples were prepared by the co-deposition of dibenzanthanthrene/Xe vapours onto the 50 K surface. The results indicate that the orientation of planar aromatic molecules is preferentially parallel to the trapping surface.
Źródło:
Acta Physica Polonica A; 2007, 112, S; S-121-S-126
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A Study of Point Defects in the B2-Phase Region of the Fe-Al System by Mössbauer Spectroscopy
Autorzy:
Hanc, A.
Kansy, J.
Dercz, G.
Pająk, L.
Oleszak, D.
Mrzigod, J.
Powiązania:
https://bibliotekanauki.pl/articles/1811589.pdf
Data publikacji:
2008-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.50.Bb
61.72.J-
76.80.+y
Opis:
In this work, we employed the Mössbauer spectroscopy and X-ray powder diffraction in a study of point defect formation in intermetallic phases of the B2 structure of the Fe-Al system as a function of Al concentration. The results are compared with the concentrations of point defect determined from positron annihilation data. In the Mössbauer effect, two types of samples are investigated: Fe-Al alloys with few additives obtained by induction melting and Al-rich metallic powders produced by the self-decomposition method and intensive grinding of high energy in the electro-magneto-mechanical mill. We present the values of the $\text{}^{57}Fe$ isomer shift and quadrupole splitting for the components describing the point defect in the local environment of a Mössbauer nuclide. The concentration of the Fe vacancies and Fe atoms substituting Al (Fe-AS) are determined. The results showed that an increase in Al content causes an increase in vacancy and Fe-AS concentration.
Źródło:
Acta Physica Polonica A; 2008, 114, 6; 1555-1562
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Depth Profiling of Defects in He Implanted $SiO_2$
Autorzy:
Mariazzi, S.
Toniutti, L.
Brusa, R.
Duarte Naia, M.
Karbowski, A.
Karwasz, G.
Powiązania:
https://bibliotekanauki.pl/articles/1812538.pdf
Data publikacji:
2008-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.60.+z
78.70.Bj
68.55.-a
61.82.Ms
61.72.J-
Opis:
Thin layer of $SiO_2$ thermally grown on p-type Si was implanted with $He^+$ ions at 30 keV with a dose of $5×10^{15}$ ions/$cm^2$. $SiO_2//Si$ samples were depth profiled by Doppler broadening positron annihilation spectroscopy to identify induced defects in the silicon oxide, at the interface and in the Si substrate. In one sample the silicon dioxide layer was removed by etching after implantation. It is shown that removing the silicon dioxide layer some more information about defects into the substrate can be found.
Źródło:
Acta Physica Polonica A; 2008, 113, 5; 1447-1453
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Carrier Recombination in Si Heavily Irradiated by Neutrons
Autorzy:
Gaubas, E.
Kadys, A.
Uleckas, A.
Vaitkus, J.
Powiązania:
https://bibliotekanauki.pl/articles/1813194.pdf
Data publikacji:
2008-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.J-
61.82.Fk
72.40.+w
Opis:
Variations of recombination lifetime, with fluence of the reactor neutrons from $10^{12}$ to $3×10^{16} n//cm^2$, in the magnetic field applied Czochralski grown Si samples are examined by the contactless transient techniques of the microwave probed photoconductivity and dynamic gratings. A nearly linear decrease in lifetime from few microseconds to about 200 ps within the examined range of neutron irradiation fluences was obtained. This dependence persists under relatively low (≤80°C) temperature heat treatments. Also, cross-sectional scans of lifetime depth-profiles were examined, which show rather high homogeneity of lifetime values within wafer thickness.
Źródło:
Acta Physica Polonica A; 2008, 113, 3; 829-832
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Thermoelectric Promise of $(In_xSn_x)Co_4Sb_{12}$ Materials
Autorzy:
Godart, C.
Lopes, E.
Gonçalves, A.
Powiązania:
https://bibliotekanauki.pl/articles/1813760.pdf
Data publikacji:
2008-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.15.Jf
61.43.-j
Opis:
We report on a new series of filled skutterudites derived from $CoSb_3$ with double filling of the cage (by In, Sn) in order to lower the thermal conductivity. As expected for Co-rich side samples, the Seebeck coefficient indicates n-type, with surprisingly high values at 300 K.
Źródło:
Acta Physica Polonica A; 2008, 113, 1; 403-406
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anharmonicity Effects in Nanocrystals Studied by Raman Scattering Spectroscopy
Autorzy:
Dohčević-Mitrović, Z.
Popović, Z.
Šćepanović, M.
Powiązania:
https://bibliotekanauki.pl/articles/1807800.pdf
Data publikacji:
2009-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
63.22.-m
78.67.Bf
78.30.-j
61.72.uj
Opis:
Phonon-phonon interactions were investigated in various nanocrystalline powders like anatase $TiO_{2-δ}$, pure $CeO_{2-δ}$ and ceria doped with Nd(Gd) analyzing temperature dependent Raman spectra of these systems. Phonon confinement model based on size, inhomogeneous strain and anharmonic effects was used to properly describe the evident changes present in the Raman spectra of pure and doped ceria nanocrystalline samples. In small particles of pure and doped ceria nanocrystals, when size effects have minor impact on Raman modes, four phonon anharmonic processes prevail under the three-phonon ones. When nanopowdered particles are grown enough size effects provoke changes of the anharmonic interactions when three-phonon coupling prevails over the four-phonon anharmonic processes. In nanocrystalline anatase $TiO_2$ evident blueshift of the most prominent $E_g$ Raman mode probably originates from dominant four-phonon anharmonic interactions.
Źródło:
Acta Physica Polonica A; 2009, 116, 1; 36-41
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of $Fe^{2+} (Fe^{3+})$ Doping on Structural Properties οf $CeO_2$ Nanocrystals
Autorzy:
Radović, M.
Dohčević-Mitrović, Z.
Paunović, N.
Šćepanović, M.
Matović, B.
Popović, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1807838.pdf
Data publikacji:
2009-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
78.30.-j
75.50.Tt
Opis:
We have measured the Raman scattering and magnetization of pure and $Fe^{2+}(Fe^{3+})$ doped $CeO_2$ nanopowders at room temperature. The Raman scattering spectra revealed the existence of $CeO_2$ fluorite cubic structure for all investigated samples. The Raman active mode at about 600 $cm^{-1}$, seen in all samples, can be ascribed to the $CeO_2$ intrinsic oxygen vacancies. Additional Raman modes at 720 $cm^{-1}$, 1320 $cm^{-1}$ and 1600 $cm^{-1}$, which appear in the spectra of doped samples, can be assigned to maghemite $(γ-Fe_2O_3)$ cation deficient structure, to $2ω_{LO}$ IR-allowed overtone and two magnon structure, respectively. This implies that our powders are composed of mixed valence states and have defective structure. Presence of oxygen defect states and magnetic ions can be responsible for the observed ferromagnetism at room temperature in both pure and Fe doped samples.
Źródło:
Acta Physica Polonica A; 2009, 116, 1; 84-87
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Raman Spectroscopy for the Analysis οf Temperature-Dependent Plastic Relaxation οf SiGe Layers
Autorzy:
Pezzoli, F.
Bonera, E.
Bollani, M.
Sanguinetti, S.
Grilli, E.
Guzzi, M.
Isella, G.
Chrastina, D.
von Känel, H.
Powiązania:
https://bibliotekanauki.pl/articles/1807828.pdf
Data publikacji:
2009-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Lk
61.72.uf
62.20.mj
62.20.mm
78.30.-j
Opis:
Novel architectures for electronics and photonics are expected to be developed using the forthcoming $Si_{1-x}Ge_{x}$ technology. However, in $Si_{1-x}Ge_{x}$-based heterostructures, materials and design issues rely on accurate control of strain and composition of the alloy. The Raman spectroscopy has rapidly emerged as a reliable technique for the quantitative determination of such parameters on a sub-micrometric scale. In this work we present an investigation of the effects of the growth conditions of $Si_{1-x}Ge_{x}$ graded layers on dislocation nucleation and interaction. In particular, we focus on the crucial role the deposition temperature plays in the dislocation kinetics. The analysis of threading dislocation densities is accompanied by a quantitative measurement of the residual strain in $Si_{1-x}Ge_{x}$/Si heterostructures, carried out by means of the Raman scattering. Our approach is effective in studying the physical mechanism governing dislocation multiplication and the sharp transition from a state of brittleness to a state of ductility within a narrow temperature window.
Źródło:
Acta Physica Polonica A; 2009, 116, 1; 78-80
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Induced Absorption in Gadolinium Gallium Garnet Irradiated by High Energy $\text{}^{235}U$ Ions
Autorzy:
Potera, P.
Ubizskii, S.
Sugak, D.
Schwartz, K.
Powiązania:
https://bibliotekanauki.pl/articles/1550538.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.jn
81.40.Wx
61.80.Ba
61.80.Jh
61.72.J-
Opis:
The present work is devoted to investigation of optical absorption in pure $Gd_{3}Ga_{5}O_{12}$ (GGG) single crystals in the spectral range 0.2-1.1 μm induced under influence of the $\text{}^{235}U$ ions irradiation with energy 2640 MeV and a fluence $10^{9}-10^{11} cm^{-2}$. The induced absorption for $10^{9} cm^{-2}$ is caused by recharging of point defects, both growth ones and impurities. After irradiation by $\text{}^{235}U$ ions with fluences starting from $3 \times 10^{9} cm^{-2}$ the absorption rise is probably caused by contribution of the lattice destroying as a result of heavy ion bombardment as well as radiation displacement defects.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 181-183
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Point Defects in Magnesium Aluminates Spinel Ceramics Doped with Lithium Fluoride
Autorzy:
Gritsyna, V.
Kazarinov, Yu.
Moskvitin, A.
Reimanis, I.
Powiązania:
https://bibliotekanauki.pl/articles/1550494.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Je
61.72.J-
Opis:
The nature and topological distribution of optical centers within various regions of hot pressed disks of transparent magnesium aluminates spinel ceramics doped with LiF were studied. In the optical absorption spectra of this type of ceramic, bands were revealed at 4.75 eV and 5.3 eV, which were identified with $F^{+}-$ and F-centers, respectively. Because both bands are formed by anionic vacancies which captured one or two electrons, the topological distribution of anionic vacancies was determined. The band at 5.65 eV was also found which is tentatively identified with complex centers of anionic vacancies that capture fluorine ions and electrons. Using X-ray irradiation the variety of absorption bands of hole centers related to cationic vacancies was established. The spatial distribution of cationic vacancies within the ceramic disk was also determined.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 161-165
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Defect Transformations in Ion Bombarded InGaAsP
Autorzy:
Ratajczak, R.
Turos, A.
Stonert, A.
Nowicki, L.
Strupiński, W.
Powiązania:
https://bibliotekanauki.pl/articles/1504046.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.43.-j
61.72.-y
81.05.-t
82.80.-d
85.40.-e
Opis:
Damage buildup and defect transformations at temperatures ranging from 15 K to 300 K in ion bombarded InGaAsP epitaxial layers on InP were studied by in situ Rutherford backscattering/channeling measurements using 1.4 MeV $\text{}^4He$ ions. Ion bombardment was performed using 150 keV N ions and 580 keV As ions to fluences ranging from 5 × $10^{12}$ to 6 × $10^{14}$ at./$cm^2$. Damage distributions were determined using the McChasy Monte Carlo simulation code assuming that they consist of randomly displaced lattice atoms and extended defects producing bending of atomic planes. Steep damage buildup up to amorphisation with increasing ion fluence was observed. Defect production rate increases with the ion mass and decreases with the implantation temperature. Parameters of damage buildup were evaluated in the frame of the multi-step damage accumulation model. Following ion bombardment at 15 K defect transformations upon warming up to 300 K have also been studied. Defect migration beginning above 100 K was revealed leading to a broad defect recovery stage with the activation energy of 0.1 eV for randomly displaced atoms and 0.15 eV for bent channels defects.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 136-139
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Hot Implantation on Residual Radiation Damage in Silicon Carbide
Autorzy:
Rawski, M.
Żuk, J.
Kulik, M.
Droździel, A.
Lin, L.
Prucnal, S.
Pyszniak, K.
Turek, M.
Powiązania:
https://bibliotekanauki.pl/articles/1504145.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.U-
78.30.-j
61.05.Np
63.50.-x
79.20.Rf
81.70.Fy
Opis:
Remarkable thermomechanical and electrical properties of silicon carbide (SiC) make this material very attractive for high-temperature, high-power, and high-frequency applications. Because of very low values of diffusion coefficient of most impurities in SiC, ion implantation is the best method to selectively introduce dopants over well-defined depths in SiC. Aluminium is commonly used for creating p-type regions in SiC. However, post-implantation radiation damage, which strongly deteriorates required electric properties of the implanted layers, is difficult to anneal even at high temperatures because of remaining residual damage. Therefore implantation at elevated target temperatures (hot implantation) is nowadays an accepted method to decrease the level of the residual radiation damage by avoiding ion beam-induced amorphization. The main objective of this study is to compare the results of the Rutherford backscattering spectroscopy with channeling and micro-Raman spectroscopy investigations of room temperature and 500°C $Al^{+}$ ion implantation-induced damage in 6H-SiC and its removal by high temperature (up to 1600°C) thermal annealing.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 192-195
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Native Deep-Level Defects in MBE-Grown p-Type CdTe
Autorzy:
Olender, K.
Wosiński, T.
Mąkosa, A.
Dłużewski, P.
Kolkovsky, V.
Karczewski, G.
Powiązania:
https://bibliotekanauki.pl/articles/1492964.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
68.37.Lp
61.72.J-
61.72.Lk
Opis:
Deep-level transient spectroscopy was used to study the defect levels in p-type CdTe layers grown by the molecular-beam epitaxy technique on lattice-mismatched GaAs substrates. In our measurements we have observed five hole traps. Two of the traps, displaying exponential capture kinetics, have been assigned to native point defects, the Cd vacancy and a complex formed of Cd vacancy and Te antisite, produced in the CdTe layers during their growth. The other two traps have been attributed to electronic states of threading dislocations on the ground of their logarithmic capture kinetics. The last trap, which was observed only when the investigated space charge region was close to the metal-semiconductor interface, has been ascribed to surface states.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 946-949
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 33

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