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Wyświetlanie 1-15 z 33
Tytuł:
Thermoelectric Promise of $(In_xSn_x)Co_4Sb_{12}$ Materials
Autorzy:
Godart, C.
Lopes, E.
Gonçalves, A.
Powiązania:
https://bibliotekanauki.pl/articles/1813760.pdf
Data publikacji:
2008-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.15.Jf
61.43.-j
Opis:
We report on a new series of filled skutterudites derived from $CoSb_3$ with double filling of the cage (by In, Sn) in order to lower the thermal conductivity. As expected for Co-rich side samples, the Seebeck coefficient indicates n-type, with surprisingly high values at 300 K.
Źródło:
Acta Physica Polonica A; 2008, 113, 1; 403-406
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The microstructure and thermal stability of the two-component melt-spun Ni₅₅Fe₂₀Cu₅P₁₀B₁₀ TCMS amorphous/amorphous composite
Autorzy:
Ziewiec, K.
Wojciechowska, M.
Prusik, K.
Mucha, D.
Jankowska-Sumara, I.
Powiązania:
https://bibliotekanauki.pl/articles/1075849.pdf
Data publikacji:
2016-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
61.05.J-
81.05.Kf
81.05.Pj
72.15.Cz
68.60.Dv
Opis:
The aim of this study is to present the special features and properties of the two alloys of similar average chemical composition Ni₅₅Fe₂₀Cu₅P₁₀B₁₀, processed through two different routes. The first alloy was melt-spun after the ejection of homogeneous liquid using a traditional single chamber crucible, and the second alloy was ejected from a double chamber crucible as two separate liquids: i.e., Ni₄₀Fe₄₀B₂₀ and Ni₇₀Cu₁₀P₂₀, mixing only at the orifice area. The studies of the microstructure of the composite alloy were performed through the use of transmission electron microscopy and scanning electron microscopy. The Ni₅₅Fe₂₀Cu₅P₁₀B₁₀ two-chamber melt-spun (TCMS) alloy, as well as the homogeneous Ni₅₅Fe₂₀Cu₅P₁₀B₁₀, Ni₄₀Fe₄₀B₂₀, and Ni₇₀Cu₁₀P₂₀ alloys, were heated to elevated temperatures and their characteristics studied by means of differential scanning calorimetry. The temperature resistivity change method was applied to the examination of the Ni₅₅Fe₂₀Cu₅P₁₀B₁₀ TCMS alloy. The phase composition after heat treatment was investigated using X-ray diffraction. The results of the microstructure examination show that the TCMS alloy is an amorphous/amorphous composite, and is notable for its Ni-Fe-B and Ni-Cu-P stripes resulting from its differentiated chemical composition. Another unique feature of the TCMS alloy is that it retains its wood-like morphology even after high-temperature heat treatment. The crystallisation of the TCMS alloy starts from the Ni-Cu-P constituent and ends with the Ni-Fe-B areas of the sample. The results are discussed on the basis of previous work completed on amorphous matrix composites.
Źródło:
Acta Physica Polonica A; 2016, 130, 4; 927-930
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Synthesis and Characterization of a Water-Soluble Ionic Polyacetylene Derivative
Autorzy:
Gal, Y.
Jin, S.
Park, J.
Lim, K.
Powiązania:
https://bibliotekanauki.pl/articles/1398739.pdf
Data publikacji:
2016-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
72.80.L
73.61.P
78.20.C
78.30.J
Opis:
A new water-soluble ionic polyacetylene was synthesized by the acid-catalyzed polymerization of 2-ethynylpyridine using acrylic acid. The polymerization proceeded well to give a high yield of polymer. The acetylenic C ≡ C bond stretching (2110 cm¯¹) and acetylenic ≡ C-H bond stretching (3293 cm¯¹) peaks of 2-ethynylpyridine monomer were not seen in the FT-IR spectrum of polymer. The electro-optical and electrical properties of the ionic polyacetylene were measured and discussed. The resulting polymer showed strong maximum at 513 nm in the UV-Visible absorption, which is corresponding to photon energy of 2.42 eV. The energy gap width of polymer was estimated to be of 2.08 eV. It was observed that the electrochemical process of polymer is reproducible in the potential range of -1.80 to 1.60 V vs Ag/AgNO₃. HOMO and LUMO levels of polymer were 4.85 eV and 2.77 eV, respectively.
Źródło:
Acta Physica Polonica A; 2016, 129, 4; 642-646
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of SrLaAlO$\text{}_{4}$ and SrLaGaO$\text{}_{4}$ Substrate Crystals by Raman Spectroscopy
Autorzy:
Drozdowski, M.
Kozielski, M.
Pajączkowska, A.
Powiązania:
https://bibliotekanauki.pl/articles/1964243.pdf
Data publikacji:
1997-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
78.30.-j
33.20.Fb
63.20.-e
Opis:
In this paper the study of SrLaAlO$\text{}_{4}$ and SrLaGaO$\text{}_{4}$ single crystals using the Raman scattering method is presented. The obtained results are discussed in terms of nature of the crystallografic imperfections and point defects which might arise during the crystal growth process.
Źródło:
Acta Physica Polonica A; 1997, 92, 1; 139-142
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Oxide-Dispersion-Strengthened Ferritic Steels after Ion Implantation
Autorzy:
Simeg Veternikova, J.
Korhonen, E.
Skarba, M.
Degmova, J.
Sabelova, V.
Sojak, S.
Slugen, V.
Powiązania:
https://bibliotekanauki.pl/articles/1336688.pdf
Data publikacji:
2014-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
68.55.Ln
61.72.J-
Opis:
This paper is focused on four different commercial oxide-dispersion-strengthened ferritic steels (MA 956, ODM 751, MA 957 and ODS Eurofer) with different chromium content and the change of their microstructure after helium ion implantation. The samples were implanted with kinetic energy of ions up to 500 keV and the implantation depth was up to 1.2 μm. The implantation was performed at Institute of Nuclear and Physical Engineering, Slovak University of Technology in Bratislava. The samples were observed prior and after the implantation by positron Doppler broadening spectroscopy with slow positron beam (energy up to 36 keV) which is one of the most suitable techniques due to its sensitivity to surface and subsurface layers up to 1.6 μm. The results showed visible change of defect presence in all samples and defect depth profiles are in a good accordance with SRIM software calculations displaying the Bragg peak. According to measured data, ODS Eurofer (9% Cr) seems to be the most radiation resistant from the group of all investigated steels and MA 956 (20% Cr) as the most radiation affected steel.
Źródło:
Acta Physica Polonica A; 2014, 125, 3; 741-743
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Spin-Polarized and Normal Hopping Magnetoresistance in Heavily Doped Silicon
Autorzy:
Fedotov, A.
Prischepa, S.
Danilyuk, A.
Svito, I.
Zukowski, P.
Powiązania:
https://bibliotekanauki.pl/articles/1365745.pdf
Data publikacji:
2014-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uf
72.20.My
75.76.+j
Opis:
Investigation of electrical resistivity ρ and magnetoresistance in single crystalline n-type silicon heavily doped with antimony in the temperature range ΔT=5-300 K and at the magnetic inductance B up to 8 T was performed. It was established that, for the temperature range ΔT=25-300 K the conductivity is of activation type, while for ΔT=5-25 K it is of variable range hopping and is described by the Mott law. Parameters of the Mott hopping were calculated. It was shown that, to explain the experimental data, the spin polarized hopping via the occupied states has to be taken into account. The obtained parameters revealed that for the low temperature range ΔT=5-11 K the spin polarized hopping dominates, while for ΔT=11-20 K the spin polarized transport is accompanied by the wave function contraction.
Źródło:
Acta Physica Polonica A; 2014, 125, 6; 1271-1274
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Simulation study of topological point defects in graphitic layer - curvature effect and pair correlation function analysis
Autorzy:
Hawelek, L.
Powiązania:
https://bibliotekanauki.pl/articles/1075560.pdf
Data publikacji:
2016-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.ue
61.72.J-
61.43.Bn
61.66.Fn
61.05.C-
Opis:
The effect of three types of topological defects, single vacancy, double vacancy and the Stone-Thrower-Wales defect on the atomic arrangement in a single graphitic layer is studied using computer simulations. The topological defects were positioned on the perfect hexagonal graphitic layer 20 Å in diameter with different distance from the layer edge and then the geometry of the system was independently optimized using the reactive bond order potential, the semi-empirical quantum-chemical PM7 and the density functional theory method. Curvature and the distortion of the graphitic layer caused by the defects are analyzed and their influence on the pair correlation function is discussed.
Źródło:
Acta Physica Polonica A; 2016, 130, 3; 811-816
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Raman Spectroscopy for the Analysis οf Temperature-Dependent Plastic Relaxation οf SiGe Layers
Autorzy:
Pezzoli, F.
Bonera, E.
Bollani, M.
Sanguinetti, S.
Grilli, E.
Guzzi, M.
Isella, G.
Chrastina, D.
von Känel, H.
Powiązania:
https://bibliotekanauki.pl/articles/1807828.pdf
Data publikacji:
2009-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Lk
61.72.uf
62.20.mj
62.20.mm
78.30.-j
Opis:
Novel architectures for electronics and photonics are expected to be developed using the forthcoming $Si_{1-x}Ge_{x}$ technology. However, in $Si_{1-x}Ge_{x}$-based heterostructures, materials and design issues rely on accurate control of strain and composition of the alloy. The Raman spectroscopy has rapidly emerged as a reliable technique for the quantitative determination of such parameters on a sub-micrometric scale. In this work we present an investigation of the effects of the growth conditions of $Si_{1-x}Ge_{x}$ graded layers on dislocation nucleation and interaction. In particular, we focus on the crucial role the deposition temperature plays in the dislocation kinetics. The analysis of threading dislocation densities is accompanied by a quantitative measurement of the residual strain in $Si_{1-x}Ge_{x}$/Si heterostructures, carried out by means of the Raman scattering. Our approach is effective in studying the physical mechanism governing dislocation multiplication and the sharp transition from a state of brittleness to a state of ductility within a narrow temperature window.
Źródło:
Acta Physica Polonica A; 2009, 116, 1; 78-80
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantitative Model of the Surface Relief Formation in Cyclic Straining
Autorzy:
Polák, J.
Man, J.
Powiązania:
https://bibliotekanauki.pl/articles/1177391.pdf
Data publikacji:
2015-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.20.me
81.05.Bx
61.72.Ff
61.72.Hh
61.72.Lk
61.72.J-
Opis:
The cyclic strain localization in crystalline materials subjected to cyclic loading results in specific dislocation arrangement in persistent slip bands consisting of alternating dislocation rich and dislocation poor volumes. In the present model the interaction of mobile dislocations in persistent slip band leading to the formation of point defects during cyclic straining is considered. Point defects are steadily produced and simultaneously annihilated due to localized cyclic straining. The non-equilibrium point defects migrate to the matrix and result in transfer of matter between persistent slip band and the matrix and formation of the internal stresses both in the persistent slip band and in the matrix. Plastic relaxation of internal stresses leads to the formation of the characteristic surface relief in the form of persistent slip markings (extrusions and intrusions). Process of point defect migration is quantitatively described and the form of extrusion and parallel intrusions is predicted under some simplifying assumptions. The predictions of the model are discussed and predicted surface relief is compared with selected observations of surface relief produced by cyclic straining.
Źródło:
Acta Physica Polonica A; 2015, 128, 4; 675-680
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Precipitation Effects in Mg-Zn Alloys Studied by Positron Annihilation and Hardness Testing
Autorzy:
Hruška, P.
Čížek, J.
Vlček, M.
Melikhova, O.
Procházka, I.
Powiązania:
https://bibliotekanauki.pl/articles/1196079.pdf
Data publikacji:
2014-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Bj
61.72.J-
Opis:
In the present work positron annihilation spectroscopy combined with Vickers hardness testing were employed in order to investigate precipitation effects in Mg-Zn alloys. It was found that incoherent precipitates of a metastable Zn-rich phase formed in the samples isochronally annealed above 200C cause hardening of the alloy.
Źródło:
Acta Physica Polonica A; 2014, 125, 3; 718-721
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Positron Annihilation in Magnetite Nanopowders Prepared by Co-Precipitation Method
Autorzy:
Durak, K.
Wiertel, M.
Surowiec, Z.
Miaskowski, A.
Powiązania:
https://bibliotekanauki.pl/articles/1033944.pdf
Data publikacji:
2017-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.07.Wx
47.65.Cb
78.70.Bj
61.72.J-
61.72.Mm
68.37.Hk
Opis:
Nanosized iron oxide powders are materials considered with regard to its application in medical therapy called hyperthermia. Magnetite nanopowders with crystallite size varying from 6.6 to 11.8 nm have been prepared by the co-precipitation method. In this study a change of a crystallite size is driven mainly by varying of initial pH of water ammonia solution in which a process of magnetite precipitation runs. Crystallographic structures and phase composition obtained samples and the size of magnetite nanoparticles were determined by X-ray diffraction method. Positron lifetime spectroscopy has been used to assess defectiveness of microstructure. Experimental positron annihilation spectra were successfully resolved into three lifetime components. It appears that from point of view of microstructure the defects concentrations in studied nanopowder samples are very high which causes a saturation of positron trapping.
Źródło:
Acta Physica Polonica A; 2017, 132, 5; 1593-1597
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Point Defects in Magnesium Aluminates Spinel Ceramics Doped with Lithium Fluoride
Autorzy:
Gritsyna, V.
Kazarinov, Yu.
Moskvitin, A.
Reimanis, I.
Powiązania:
https://bibliotekanauki.pl/articles/1550494.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Je
61.72.J-
Opis:
The nature and topological distribution of optical centers within various regions of hot pressed disks of transparent magnesium aluminates spinel ceramics doped with LiF were studied. In the optical absorption spectra of this type of ceramic, bands were revealed at 4.75 eV and 5.3 eV, which were identified with $F^{+}-$ and F-centers, respectively. Because both bands are formed by anionic vacancies which captured one or two electrons, the topological distribution of anionic vacancies was determined. The band at 5.65 eV was also found which is tentatively identified with complex centers of anionic vacancies that capture fluorine ions and electrons. Using X-ray irradiation the variety of absorption bands of hole centers related to cationic vacancies was established. The spatial distribution of cationic vacancies within the ceramic disk was also determined.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 161-165
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Orientation of Single Dibenzanthanthrene Molecules in Solid Xenon
Autorzy:
Sepioł, J.
Kołos, R.
Jasny, J.
Powiązania:
https://bibliotekanauki.pl/articles/1814017.pdf
Data publikacji:
2007-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
33.50.-j
61.66.Bi
61.66.Hq
61.72.Ww
Opis:
The spatial distributions of individual dibenzanthanthrene electronic transition dipole moments in solid Xe was investigated at the single molecule level, with the high-resolution fluorescence spectroscopy. Samples were prepared by the co-deposition of dibenzanthanthrene/Xe vapours onto the 50 K surface. The results indicate that the orientation of planar aromatic molecules is preferentially parallel to the trapping surface.
Źródło:
Acta Physica Polonica A; 2007, 112, S; S-121-S-126
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Native Deep-Level Defects in MBE-Grown p-Type CdTe
Autorzy:
Olender, K.
Wosiński, T.
Mąkosa, A.
Dłużewski, P.
Kolkovsky, V.
Karczewski, G.
Powiązania:
https://bibliotekanauki.pl/articles/1492964.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
68.37.Lp
61.72.J-
61.72.Lk
Opis:
Deep-level transient spectroscopy was used to study the defect levels in p-type CdTe layers grown by the molecular-beam epitaxy technique on lattice-mismatched GaAs substrates. In our measurements we have observed five hole traps. Two of the traps, displaying exponential capture kinetics, have been assigned to native point defects, the Cd vacancy and a complex formed of Cd vacancy and Te antisite, produced in the CdTe layers during their growth. The other two traps have been attributed to electronic states of threading dislocations on the ground of their logarithmic capture kinetics. The last trap, which was observed only when the investigated space charge region was close to the metal-semiconductor interface, has been ascribed to surface states.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 946-949
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nanoscale deformation of GaAs affected by silicon doping
Autorzy:
Majtyka, A.
Nowak, R.
Chrobak, D.
Powiązania:
https://bibliotekanauki.pl/articles/1112264.pdf
Data publikacji:
2016-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
64.70.kg
61.72.J-
Opis:
Effect of silicon doping on the elastic-plastic transition of GaAs crystal is demonstrated by results of nanoindentations and ab initio simulations. The performed experiments show that an increase of silicon concentration causes a decrease of the contact pressure at the onset of permanent nanodeformation of GaAs crystal. Ab initio calculations demonstrate that presence of Si atoms in the crystal lattice suppresses the shear modulus as well as the pressure of equilibrium between zinc-blende and rock-salt phases of GaAs. Furthermore, it is argued that the effect of dislocations pinning to Si dopants is essential for clarification of GaAs yielding.
Źródło:
Acta Physica Polonica A; 2016, 130, 4; 1127-1130
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 33

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