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Wyświetlanie 1-15 z 33
Tytuł:
The microstructure and thermal stability of the two-component melt-spun Ni₅₅Fe₂₀Cu₅P₁₀B₁₀ TCMS amorphous/amorphous composite
Autorzy:
Ziewiec, K.
Wojciechowska, M.
Prusik, K.
Mucha, D.
Jankowska-Sumara, I.
Powiązania:
https://bibliotekanauki.pl/articles/1075849.pdf
Data publikacji:
2016-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.05.cp
61.05.J-
81.05.Kf
81.05.Pj
72.15.Cz
68.60.Dv
Opis:
The aim of this study is to present the special features and properties of the two alloys of similar average chemical composition Ni₅₅Fe₂₀Cu₅P₁₀B₁₀, processed through two different routes. The first alloy was melt-spun after the ejection of homogeneous liquid using a traditional single chamber crucible, and the second alloy was ejected from a double chamber crucible as two separate liquids: i.e., Ni₄₀Fe₄₀B₂₀ and Ni₇₀Cu₁₀P₂₀, mixing only at the orifice area. The studies of the microstructure of the composite alloy were performed through the use of transmission electron microscopy and scanning electron microscopy. The Ni₅₅Fe₂₀Cu₅P₁₀B₁₀ two-chamber melt-spun (TCMS) alloy, as well as the homogeneous Ni₅₅Fe₂₀Cu₅P₁₀B₁₀, Ni₄₀Fe₄₀B₂₀, and Ni₇₀Cu₁₀P₂₀ alloys, were heated to elevated temperatures and their characteristics studied by means of differential scanning calorimetry. The temperature resistivity change method was applied to the examination of the Ni₅₅Fe₂₀Cu₅P₁₀B₁₀ TCMS alloy. The phase composition after heat treatment was investigated using X-ray diffraction. The results of the microstructure examination show that the TCMS alloy is an amorphous/amorphous composite, and is notable for its Ni-Fe-B and Ni-Cu-P stripes resulting from its differentiated chemical composition. Another unique feature of the TCMS alloy is that it retains its wood-like morphology even after high-temperature heat treatment. The crystallisation of the TCMS alloy starts from the Ni-Cu-P constituent and ends with the Ni-Fe-B areas of the sample. The results are discussed on the basis of previous work completed on amorphous matrix composites.
Źródło:
Acta Physica Polonica A; 2016, 130, 4; 927-930
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Investigation of Precipitation Effects in Mg-Tb and Mg-Tb-Nd Alloys
Autorzy:
Vlček, M.
Čížek, J.
Melikhova, O.
Hruška, P.
Procházka, I.
Powiązania:
https://bibliotekanauki.pl/articles/1196115.pdf
Data publikacji:
2014-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.70.Bj
61.72.J-
Opis:
Investigation of precipitation effects in solution treated Mg-Tb and Mg-Tb-Nd alloy was performed. Solution treated alloys were compared with samples deformed by high pressure torsion to examine influence of deformation on precipitation effects. Dislocations present in samples processed by high pressure torsion can serve as diffusion channels for atoms and also as nucleation sites for precipitates. Therefore precipitation of some phases in high pressure torsion deformed samples was observed at lower temperatures than in solution treated ones.
Źródło:
Acta Physica Polonica A; 2014, 125, 3; 744-747
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Study of Oxide-Dispersion-Strengthened Ferritic Steels after Ion Implantation
Autorzy:
Simeg Veternikova, J.
Korhonen, E.
Skarba, M.
Degmova, J.
Sabelova, V.
Sojak, S.
Slugen, V.
Powiązania:
https://bibliotekanauki.pl/articles/1336688.pdf
Data publikacji:
2014-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.-y
68.55.Ln
61.72.J-
Opis:
This paper is focused on four different commercial oxide-dispersion-strengthened ferritic steels (MA 956, ODM 751, MA 957 and ODS Eurofer) with different chromium content and the change of their microstructure after helium ion implantation. The samples were implanted with kinetic energy of ions up to 500 keV and the implantation depth was up to 1.2 μm. The implantation was performed at Institute of Nuclear and Physical Engineering, Slovak University of Technology in Bratislava. The samples were observed prior and after the implantation by positron Doppler broadening spectroscopy with slow positron beam (energy up to 36 keV) which is one of the most suitable techniques due to its sensitivity to surface and subsurface layers up to 1.6 μm. The results showed visible change of defect presence in all samples and defect depth profiles are in a good accordance with SRIM software calculations displaying the Bragg peak. According to measured data, ODS Eurofer (9% Cr) seems to be the most radiation resistant from the group of all investigated steels and MA 956 (20% Cr) as the most radiation affected steel.
Źródło:
Acta Physica Polonica A; 2014, 125, 3; 741-743
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Orientation of Single Dibenzanthanthrene Molecules in Solid Xenon
Autorzy:
Sepioł, J.
Kołos, R.
Jasny, J.
Powiązania:
https://bibliotekanauki.pl/articles/1814017.pdf
Data publikacji:
2007-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
33.50.-j
61.66.Bi
61.66.Hq
61.72.Ww
Opis:
The spatial distributions of individual dibenzanthanthrene electronic transition dipole moments in solid Xe was investigated at the single molecule level, with the high-resolution fluorescence spectroscopy. Samples were prepared by the co-deposition of dibenzanthanthrene/Xe vapours onto the 50 K surface. The results indicate that the orientation of planar aromatic molecules is preferentially parallel to the trapping surface.
Źródło:
Acta Physica Polonica A; 2007, 112, S; S-121-S-126
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of Hot Implantation on Residual Radiation Damage in Silicon Carbide
Autorzy:
Rawski, M.
Żuk, J.
Kulik, M.
Droździel, A.
Lin, L.
Prucnal, S.
Pyszniak, K.
Turek, M.
Powiązania:
https://bibliotekanauki.pl/articles/1504145.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.U-
78.30.-j
61.05.Np
63.50.-x
79.20.Rf
81.70.Fy
Opis:
Remarkable thermomechanical and electrical properties of silicon carbide (SiC) make this material very attractive for high-temperature, high-power, and high-frequency applications. Because of very low values of diffusion coefficient of most impurities in SiC, ion implantation is the best method to selectively introduce dopants over well-defined depths in SiC. Aluminium is commonly used for creating p-type regions in SiC. However, post-implantation radiation damage, which strongly deteriorates required electric properties of the implanted layers, is difficult to anneal even at high temperatures because of remaining residual damage. Therefore implantation at elevated target temperatures (hot implantation) is nowadays an accepted method to decrease the level of the residual radiation damage by avoiding ion beam-induced amorphization. The main objective of this study is to compare the results of the Rutherford backscattering spectroscopy with channeling and micro-Raman spectroscopy investigations of room temperature and 500°C $Al^{+}$ ion implantation-induced damage in 6H-SiC and its removal by high temperature (up to 1600°C) thermal annealing.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 192-195
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Channeling Study of Co and Mn Implanted and Thermally Annealed Wide Band-Gap Semiconducting Compounds
Autorzy:
Ratajczak, R.
Werner, Z.
Barlak, M.
Pochrybniak, C.
Stonert, A.
Zhao, Q.
Powiązania:
https://bibliotekanauki.pl/articles/1402209.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.43.-j
61.72.-y
81.05.-t
82.80.-d
85.40.-e
Opis:
The defect build-up, structure recovery and lattice location of transition metals in ion bombarded and thermally annealed ZnO and GaN single crystals were studied by channeled Rutherford backscattering spectrometry and channeled particle-induced X-ray emission measurements using 1.57 MeV ⁴He ions. Ion implantation to a fluence of 1.2×10¹⁶ ions/cm² was performed using 120 keV Co and 120 keV Mn ions. Thermal annealing was performed at 800°C in argon flow. Damage distributions were determined using the Monte Carlo McChasy simulation code. The simulations of channeled Rutherford backscattering spectra reveal that the ion implantation leads to formation of two types of defect structures in ZnO and GaN such as point and extended defects, such as dislocations. The concentrations of both types of defects are at a comparable level in both structures and for both implanted ions. Differences between both implantations appear after thermal annealing where the Mn-doped ZnO reveals much better transition metals substitution and recovery effect.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 845-848
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Defect Transformations in Ion Bombarded InGaAsP
Autorzy:
Ratajczak, R.
Turos, A.
Stonert, A.
Nowicki, L.
Strupiński, W.
Powiązania:
https://bibliotekanauki.pl/articles/1504046.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.43.-j
61.72.-y
81.05.-t
82.80.-d
85.40.-e
Opis:
Damage buildup and defect transformations at temperatures ranging from 15 K to 300 K in ion bombarded InGaAsP epitaxial layers on InP were studied by in situ Rutherford backscattering/channeling measurements using 1.4 MeV $\text{}^4He$ ions. Ion bombardment was performed using 150 keV N ions and 580 keV As ions to fluences ranging from 5 × $10^{12}$ to 6 × $10^{14}$ at./$cm^2$. Damage distributions were determined using the McChasy Monte Carlo simulation code assuming that they consist of randomly displaced lattice atoms and extended defects producing bending of atomic planes. Steep damage buildup up to amorphisation with increasing ion fluence was observed. Defect production rate increases with the ion mass and decreases with the implantation temperature. Parameters of damage buildup were evaluated in the frame of the multi-step damage accumulation model. Following ion bombardment at 15 K defect transformations upon warming up to 300 K have also been studied. Defect migration beginning above 100 K was revealed leading to a broad defect recovery stage with the activation energy of 0.1 eV for randomly displaced atoms and 0.15 eV for bent channels defects.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 136-139
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Effect of $Fe^{2+} (Fe^{3+})$ Doping on Structural Properties οf $CeO_2$ Nanocrystals
Autorzy:
Radović, M.
Dohčević-Mitrović, Z.
Paunović, N.
Šćepanović, M.
Matović, B.
Popović, Z.
Powiązania:
https://bibliotekanauki.pl/articles/1807838.pdf
Data publikacji:
2009-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.uj
78.30.-j
75.50.Tt
Opis:
We have measured the Raman scattering and magnetization of pure and $Fe^{2+}(Fe^{3+})$ doped $CeO_2$ nanopowders at room temperature. The Raman scattering spectra revealed the existence of $CeO_2$ fluorite cubic structure for all investigated samples. The Raman active mode at about 600 $cm^{-1}$, seen in all samples, can be ascribed to the $CeO_2$ intrinsic oxygen vacancies. Additional Raman modes at 720 $cm^{-1}$, 1320 $cm^{-1}$ and 1600 $cm^{-1}$, which appear in the spectra of doped samples, can be assigned to maghemite $(γ-Fe_2O_3)$ cation deficient structure, to $2ω_{LO}$ IR-allowed overtone and two magnon structure, respectively. This implies that our powders are composed of mixed valence states and have defective structure. Presence of oxygen defect states and magnetic ions can be responsible for the observed ferromagnetism at room temperature in both pure and Fe doped samples.
Źródło:
Acta Physica Polonica A; 2009, 116, 1; 84-87
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Induced Absorption in Gadolinium Gallium Garnet Irradiated by High Energy $\text{}^{235}U$ Ions
Autorzy:
Potera, P.
Ubizskii, S.
Sugak, D.
Schwartz, K.
Powiązania:
https://bibliotekanauki.pl/articles/1550538.pdf
Data publikacji:
2010-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.jn
81.40.Wx
61.80.Ba
61.80.Jh
61.72.J-
Opis:
The present work is devoted to investigation of optical absorption in pure $Gd_{3}Ga_{5}O_{12}$ (GGG) single crystals in the spectral range 0.2-1.1 μm induced under influence of the $\text{}^{235}U$ ions irradiation with energy 2640 MeV and a fluence $10^{9}-10^{11} cm^{-2}$. The induced absorption for $10^{9} cm^{-2}$ is caused by recharging of point defects, both growth ones and impurities. After irradiation by $\text{}^{235}U$ ions with fluences starting from $3 \times 10^{9} cm^{-2}$ the absorption rise is probably caused by contribution of the lattice destroying as a result of heavy ion bombardment as well as radiation displacement defects.
Źródło:
Acta Physica Polonica A; 2010, 117, 1; 181-183
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Quantitative Model of the Surface Relief Formation in Cyclic Straining
Autorzy:
Polák, J.
Man, J.
Powiązania:
https://bibliotekanauki.pl/articles/1177391.pdf
Data publikacji:
2015-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
62.20.me
81.05.Bx
61.72.Ff
61.72.Hh
61.72.Lk
61.72.J-
Opis:
The cyclic strain localization in crystalline materials subjected to cyclic loading results in specific dislocation arrangement in persistent slip bands consisting of alternating dislocation rich and dislocation poor volumes. In the present model the interaction of mobile dislocations in persistent slip band leading to the formation of point defects during cyclic straining is considered. Point defects are steadily produced and simultaneously annihilated due to localized cyclic straining. The non-equilibrium point defects migrate to the matrix and result in transfer of matter between persistent slip band and the matrix and formation of the internal stresses both in the persistent slip band and in the matrix. Plastic relaxation of internal stresses leads to the formation of the characteristic surface relief in the form of persistent slip markings (extrusions and intrusions). Process of point defect migration is quantitatively described and the form of extrusion and parallel intrusions is predicted under some simplifying assumptions. The predictions of the model are discussed and predicted surface relief is compared with selected observations of surface relief produced by cyclic straining.
Źródło:
Acta Physica Polonica A; 2015, 128, 4; 675-680
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Anomalous Hall Effect in $Ge_{1-x-y}Pb_{x}Mn_{y}Te$ Composite System
Autorzy:
Podgórni, A.
Kilanski, L.
Dobrowolski, W.
Górska, M.
Domukhovski, V.
Brodowska, B.
Reszka, A.
Kowalski, B.
Slynko, V.
Slynko, E.
Powiązania:
https://bibliotekanauki.pl/articles/1376191.pdf
Data publikacji:
2014-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.J-
72.80.Ga
75.40.Mg
75.50.Pp
Opis:
The purpose of this study was to investigate the magnetotransport properties of the $Ge_{0.743}Pb_{0.183}Mn_{0.074}Te$ mixed crystal. The results of magnetization measurements indicated that the compound is a spin-glass-like diluted magnetic semiconductor with critical temperature $T_{SG}$=97.5 K. Nanoclusters in the sample are observed. Both, matrix and clusters are magnetically active. Resistivity as a function of temperature has a minimum at 30 K. Below the minimum a variable-range hopping is observed, while above the minimum a metallic-like behavior occurs. The crystal has high hole concentration, p=6.6×$10^{20}$ $cm^{-3}$, temperature-independent. Magnetoresistance amplitude changes from -0.78 to 1.18% with increase of temperature. In the magnetotransport measurements we observed the anomalous Hall effect with hysteresis loops. Calculated anomalous Hall effect coefficient, $R_{S}$ = 2.0×$10^{6}$ $m^{3}$/C, is temperature independent. The analysis indicates the extrinsic skew scattering mechanism to be the main physical mechanism responsible for anomalous Hall effect in $Ge_{0.743}Pb_{0.183}Mn_{0.074}Te$ alloy.
Źródło:
Acta Physica Polonica A; 2014, 126, 5; 1180-1183
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Raman Spectroscopy for the Analysis οf Temperature-Dependent Plastic Relaxation οf SiGe Layers
Autorzy:
Pezzoli, F.
Bonera, E.
Bollani, M.
Sanguinetti, S.
Grilli, E.
Guzzi, M.
Isella, G.
Chrastina, D.
von Känel, H.
Powiązania:
https://bibliotekanauki.pl/articles/1807828.pdf
Data publikacji:
2009-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Lk
61.72.uf
62.20.mj
62.20.mm
78.30.-j
Opis:
Novel architectures for electronics and photonics are expected to be developed using the forthcoming $Si_{1-x}Ge_{x}$ technology. However, in $Si_{1-x}Ge_{x}$-based heterostructures, materials and design issues rely on accurate control of strain and composition of the alloy. The Raman spectroscopy has rapidly emerged as a reliable technique for the quantitative determination of such parameters on a sub-micrometric scale. In this work we present an investigation of the effects of the growth conditions of $Si_{1-x}Ge_{x}$ graded layers on dislocation nucleation and interaction. In particular, we focus on the crucial role the deposition temperature plays in the dislocation kinetics. The analysis of threading dislocation densities is accompanied by a quantitative measurement of the residual strain in $Si_{1-x}Ge_{x}$/Si heterostructures, carried out by means of the Raman scattering. Our approach is effective in studying the physical mechanism governing dislocation multiplication and the sharp transition from a state of brittleness to a state of ductility within a narrow temperature window.
Źródło:
Acta Physica Polonica A; 2009, 116, 1; 78-80
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Native Deep-Level Defects in MBE-Grown p-Type CdTe
Autorzy:
Olender, K.
Wosiński, T.
Mąkosa, A.
Dłużewski, P.
Kolkovsky, V.
Karczewski, G.
Powiązania:
https://bibliotekanauki.pl/articles/1492964.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Gs
68.37.Lp
61.72.J-
61.72.Lk
Opis:
Deep-level transient spectroscopy was used to study the defect levels in p-type CdTe layers grown by the molecular-beam epitaxy technique on lattice-mismatched GaAs substrates. In our measurements we have observed five hole traps. Two of the traps, displaying exponential capture kinetics, have been assigned to native point defects, the Cd vacancy and a complex formed of Cd vacancy and Te antisite, produced in the CdTe layers during their growth. The other two traps have been attributed to electronic states of threading dislocations on the ground of their logarithmic capture kinetics. The last trap, which was observed only when the investigated space charge region was close to the metal-semiconductor interface, has been ascribed to surface states.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 946-949
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Depth Profiling of Defects in He Implanted $SiO_2$
Autorzy:
Mariazzi, S.
Toniutti, L.
Brusa, R.
Duarte Naia, M.
Karbowski, A.
Karwasz, G.
Powiązania:
https://bibliotekanauki.pl/articles/1812538.pdf
Data publikacji:
2008-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.60.+z
78.70.Bj
68.55.-a
61.82.Ms
61.72.J-
Opis:
Thin layer of $SiO_2$ thermally grown on p-type Si was implanted with $He^+$ ions at 30 keV with a dose of $5×10^{15}$ ions/$cm^2$. $SiO_2//Si$ samples were depth profiled by Doppler broadening positron annihilation spectroscopy to identify induced defects in the silicon oxide, at the interface and in the Si substrate. In one sample the silicon dioxide layer was removed by etching after implantation. It is shown that removing the silicon dioxide layer some more information about defects into the substrate can be found.
Źródło:
Acta Physica Polonica A; 2008, 113, 5; 1447-1453
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Nanoscale deformation of GaAs affected by silicon doping
Autorzy:
Majtyka, A.
Nowak, R.
Chrobak, D.
Powiązania:
https://bibliotekanauki.pl/articles/1112264.pdf
Data publikacji:
2016-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
64.70.kg
61.72.J-
Opis:
Effect of silicon doping on the elastic-plastic transition of GaAs crystal is demonstrated by results of nanoindentations and ab initio simulations. The performed experiments show that an increase of silicon concentration causes a decrease of the contact pressure at the onset of permanent nanodeformation of GaAs crystal. Ab initio calculations demonstrate that presence of Si atoms in the crystal lattice suppresses the shear modulus as well as the pressure of equilibrium between zinc-blende and rock-salt phases of GaAs. Furthermore, it is argued that the effect of dislocations pinning to Si dopants is essential for clarification of GaAs yielding.
Źródło:
Acta Physica Polonica A; 2016, 130, 4; 1127-1130
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 33

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