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    Wyświetlanie 1-33 z 33
    Tytuł:
    Precipitation Effects in Mg-Zn Alloys Studied by Positron Annihilation and Hardness Testing
    Autorzy:
    Hruška, P.
    Čížek, J.
    Vlček, M.
    Melikhova, O.
    Procházka, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1196079.pdf
    Data publikacji:
    2014-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Bj
    61.72.J-
    Opis:
    In the present work positron annihilation spectroscopy combined with Vickers hardness testing were employed in order to investigate precipitation effects in Mg-Zn alloys. It was found that incoherent precipitates of a metastable Zn-rich phase formed in the samples isochronally annealed above 200C cause hardening of the alloy.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 3; 718-721
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation of Precipitation Effects in Mg-Tb and Mg-Tb-Nd Alloys
    Autorzy:
    Vlček, M.
    Čížek, J.
    Melikhova, O.
    Hruška, P.
    Procházka, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1196115.pdf
    Data publikacji:
    2014-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Bj
    61.72.J-
    Opis:
    Investigation of precipitation effects in solution treated Mg-Tb and Mg-Tb-Nd alloy was performed. Solution treated alloys were compared with samples deformed by high pressure torsion to examine influence of deformation on precipitation effects. Dislocations present in samples processed by high pressure torsion can serve as diffusion channels for atoms and also as nucleation sites for precipitates. Therefore precipitation of some phases in high pressure torsion deformed samples was observed at lower temperatures than in solution treated ones.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 3; 744-747
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Defects Studies of ZnO Single Crystals Prepared by Various Techniques
    Autorzy:
    Lukáč, F.
    Čížek, J.
    Procházka, I.
    Melikhova, O.
    Anwand, W.
    Brauer, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1196118.pdf
    Data publikacji:
    2014-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.70.Bj
    61.72.J-
    Opis:
    The aim of the present work was a comparison of defects in ZnO crystals grown by various techniques available nowadays, namely hydrothermal growth, pressurized melt, Bridgman method growth and vapor phase growth. Positron annihilation spectroscopy was employed as a principal tool for characterization of defects in ZnO crystals grown by above mentioned various techniques. ZnO crystals can be divided into two groups: (i) hydrothermal grown crystals, which exhibit positron lifetime of 179-182 ps and (ii) ZnO crystals grown by the other techniques (pressurized melt, Bridgman method, vapor phase growth) which are characterized by the lower lifetimes falling in the range of 160-173 ps. Comparison of experimental data with ab initio theoretical calculations revealed that HT grown ZnO crystals contains Zn vacancies associated with hydrogen atom in a bond-centered site. On the other hand, ZnO crystals prepared by other techniques contain most probably stacking faults created by stresses induced by temperature gradients in the melt.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 3; 748-751
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Nanoscale deformation of GaAs affected by silicon doping
    Autorzy:
    Majtyka, A.
    Nowak, R.
    Chrobak, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1112264.pdf
    Data publikacji:
    2016-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    64.70.kg
    61.72.J-
    Opis:
    Effect of silicon doping on the elastic-plastic transition of GaAs crystal is demonstrated by results of nanoindentations and ab initio simulations. The performed experiments show that an increase of silicon concentration causes a decrease of the contact pressure at the onset of permanent nanodeformation of GaAs crystal. Ab initio calculations demonstrate that presence of Si atoms in the crystal lattice suppresses the shear modulus as well as the pressure of equilibrium between zinc-blende and rock-salt phases of GaAs. Furthermore, it is argued that the effect of dislocations pinning to Si dopants is essential for clarification of GaAs yielding.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 4; 1127-1130
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Point Defects in Magnesium Aluminates Spinel Ceramics Doped with Lithium Fluoride
    Autorzy:
    Gritsyna, V.
    Kazarinov, Yu.
    Moskvitin, A.
    Reimanis, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1550494.pdf
    Data publikacji:
    2010-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.Je
    61.72.J-
    Opis:
    The nature and topological distribution of optical centers within various regions of hot pressed disks of transparent magnesium aluminates spinel ceramics doped with LiF were studied. In the optical absorption spectra of this type of ceramic, bands were revealed at 4.75 eV and 5.3 eV, which were identified with $F^{+}-$ and F-centers, respectively. Because both bands are formed by anionic vacancies which captured one or two electrons, the topological distribution of anionic vacancies was determined. The band at 5.65 eV was also found which is tentatively identified with complex centers of anionic vacancies that capture fluorine ions and electrons. Using X-ray irradiation the variety of absorption bands of hole centers related to cationic vacancies was established. The spatial distribution of cationic vacancies within the ceramic disk was also determined.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 1; 161-165
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Investigation of Carrier Recombination in Si Heavily Irradiated by Neutrons
    Autorzy:
    Gaubas, E.
    Kadys, A.
    Uleckas, A.
    Vaitkus, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813194.pdf
    Data publikacji:
    2008-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.J-
    61.82.Fk
    72.40.+w
    Opis:
    Variations of recombination lifetime, with fluence of the reactor neutrons from $10^{12}$ to $3×10^{16} n//cm^2$, in the magnetic field applied Czochralski grown Si samples are examined by the contactless transient techniques of the microwave probed photoconductivity and dynamic gratings. A nearly linear decrease in lifetime from few microseconds to about 200 ps within the examined range of neutron irradiation fluences was obtained. This dependence persists under relatively low (≤80°C) temperature heat treatments. Also, cross-sectional scans of lifetime depth-profiles were examined, which show rather high homogeneity of lifetime values within wafer thickness.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 3; 829-832
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Study of Oxide-Dispersion-Strengthened Ferritic Steels after Ion Implantation
    Autorzy:
    Simeg Veternikova, J.
    Korhonen, E.
    Skarba, M.
    Degmova, J.
    Sabelova, V.
    Sojak, S.
    Slugen, V.
    Powiązania:
    https://bibliotekanauki.pl/articles/1336688.pdf
    Data publikacji:
    2014-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.-y
    68.55.Ln
    61.72.J-
    Opis:
    This paper is focused on four different commercial oxide-dispersion-strengthened ferritic steels (MA 956, ODM 751, MA 957 and ODS Eurofer) with different chromium content and the change of their microstructure after helium ion implantation. The samples were implanted with kinetic energy of ions up to 500 keV and the implantation depth was up to 1.2 μm. The implantation was performed at Institute of Nuclear and Physical Engineering, Slovak University of Technology in Bratislava. The samples were observed prior and after the implantation by positron Doppler broadening spectroscopy with slow positron beam (energy up to 36 keV) which is one of the most suitable techniques due to its sensitivity to surface and subsurface layers up to 1.6 μm. The results showed visible change of defect presence in all samples and defect depth profiles are in a good accordance with SRIM software calculations displaying the Bragg peak. According to measured data, ODS Eurofer (9% Cr) seems to be the most radiation resistant from the group of all investigated steels and MA 956 (20% Cr) as the most radiation affected steel.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 3; 741-743
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Comparison of Grain Boundary Structure in Metals and Semiconductors as Probed by Positrons
    Autorzy:
    Kuriplach, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1196087.pdf
    Data publikacji:
    2014-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.60.+z
    61.72.Mm
    61.72.J-
    78.70.Bj
    Opis:
    Vacancy behavior and positron trapping at selected grain boundaries in iron, nickel, and zirconia are investigated theoretically. It is found that the grain boundary vacancy loses its free volume in metals at moderate temperatures whereas it is kept up to very high temperatures in zirconia. The consequences of these findings for positron annihilation studies of nanocrystalline materials are discussed.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 3; 722-725
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Native Deep-Level Defects in MBE-Grown p-Type CdTe
    Autorzy:
    Olender, K.
    Wosiński, T.
    Mąkosa, A.
    Dłużewski, P.
    Kolkovsky, V.
    Karczewski, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492964.pdf
    Data publikacji:
    2011-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Gs
    68.37.Lp
    61.72.J-
    61.72.Lk
    Opis:
    Deep-level transient spectroscopy was used to study the defect levels in p-type CdTe layers grown by the molecular-beam epitaxy technique on lattice-mismatched GaAs substrates. In our measurements we have observed five hole traps. Two of the traps, displaying exponential capture kinetics, have been assigned to native point defects, the Cd vacancy and a complex formed of Cd vacancy and Te antisite, produced in the CdTe layers during their growth. The other two traps have been attributed to electronic states of threading dislocations on the ground of their logarithmic capture kinetics. The last trap, which was observed only when the investigated space charge region was close to the metal-semiconductor interface, has been ascribed to surface states.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 5; 946-949
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    EPR Investigations of Electrons and Neutrons Irradiated Cubic Boron Nitride
    Autorzy:
    Azarko, I.
    Ignatenko, O.
    Karpovich, I.
    Odzhaev, V.
    Kozlova, E.
    Zhukowski, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400479.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    76.30.-v
    81.05.Ea
    61.72.J-
    Opis:
    Microcrystals of cubic boron nitride powders synthesised under different conditions and further irradiated with neutrons and electrons have been investigated. It was found that some changes of the samples' paramagnetic properties depend on the electron irradiation dose. It was also shown that the initial boron type defects growth occurs under thermal neutron, as well as under fast neutrons irradiation. The nitrogen-containing defects concentration changes in a threshold manner.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 923-925
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    A Study of Point Defects in the B2-Phase Region of the Fe-Al System by Mössbauer Spectroscopy
    Autorzy:
    Hanc, A.
    Kansy, J.
    Dercz, G.
    Pająk, L.
    Oleszak, D.
    Mrzigod, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811589.pdf
    Data publikacji:
    2008-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Bb
    61.72.J-
    76.80.+y
    Opis:
    In this work, we employed the Mössbauer spectroscopy and X-ray powder diffraction in a study of point defect formation in intermetallic phases of the B2 structure of the Fe-Al system as a function of Al concentration. The results are compared with the concentrations of point defect determined from positron annihilation data. In the Mössbauer effect, two types of samples are investigated: Fe-Al alloys with few additives obtained by induction melting and Al-rich metallic powders produced by the self-decomposition method and intensive grinding of high energy in the electro-magneto-mechanical mill. We present the values of the $\text{}^{57}Fe$ isomer shift and quadrupole splitting for the components describing the point defect in the local environment of a Mössbauer nuclide. The concentration of the Fe vacancies and Fe atoms substituting Al (Fe-AS) are determined. The results showed that an increase in Al content causes an increase in vacancy and Fe-AS concentration.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 6; 1555-1562
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Induced Absorption in Gadolinium Gallium Garnet Irradiated by High Energy $\text{}^{235}U$ Ions
    Autorzy:
    Potera, P.
    Ubizskii, S.
    Sugak, D.
    Schwartz, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1550538.pdf
    Data publikacji:
    2010-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.jn
    81.40.Wx
    61.80.Ba
    61.80.Jh
    61.72.J-
    Opis:
    The present work is devoted to investigation of optical absorption in pure $Gd_{3}Ga_{5}O_{12}$ (GGG) single crystals in the spectral range 0.2-1.1 μm induced under influence of the $\text{}^{235}U$ ions irradiation with energy 2640 MeV and a fluence $10^{9}-10^{11} cm^{-2}$. The induced absorption for $10^{9} cm^{-2}$ is caused by recharging of point defects, both growth ones and impurities. After irradiation by $\text{}^{235}U$ ions with fluences starting from $3 \times 10^{9} cm^{-2}$ the absorption rise is probably caused by contribution of the lattice destroying as a result of heavy ion bombardment as well as radiation displacement defects.
    Źródło:
    Acta Physica Polonica A; 2010, 117, 1; 181-183
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Anomalous Hall Effect in $Ge_{1-x-y}Pb_{x}Mn_{y}Te$ Composite System
    Autorzy:
    Podgórni, A.
    Kilanski, L.
    Dobrowolski, W.
    Górska, M.
    Domukhovski, V.
    Brodowska, B.
    Reszka, A.
    Kowalski, B.
    Slynko, V.
    Slynko, E.
    Powiązania:
    https://bibliotekanauki.pl/articles/1376191.pdf
    Data publikacji:
    2014-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.J-
    72.80.Ga
    75.40.Mg
    75.50.Pp
    Opis:
    The purpose of this study was to investigate the magnetotransport properties of the $Ge_{0.743}Pb_{0.183}Mn_{0.074}Te$ mixed crystal. The results of magnetization measurements indicated that the compound is a spin-glass-like diluted magnetic semiconductor with critical temperature $T_{SG}$=97.5 K. Nanoclusters in the sample are observed. Both, matrix and clusters are magnetically active. Resistivity as a function of temperature has a minimum at 30 K. Below the minimum a variable-range hopping is observed, while above the minimum a metallic-like behavior occurs. The crystal has high hole concentration, p=6.6×$10^{20}$ $cm^{-3}$, temperature-independent. Magnetoresistance amplitude changes from -0.78 to 1.18% with increase of temperature. In the magnetotransport measurements we observed the anomalous Hall effect with hysteresis loops. Calculated anomalous Hall effect coefficient, $R_{S}$ = 2.0×$10^{6}$ $m^{3}$/C, is temperature independent. The analysis indicates the extrinsic skew scattering mechanism to be the main physical mechanism responsible for anomalous Hall effect in $Ge_{0.743}Pb_{0.183}Mn_{0.074}Te$ alloy.
    Źródło:
    Acta Physica Polonica A; 2014, 126, 5; 1180-1183
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Quantitative Model of the Surface Relief Formation in Cyclic Straining
    Autorzy:
    Polák, J.
    Man, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1177391.pdf
    Data publikacji:
    2015-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    62.20.me
    81.05.Bx
    61.72.Ff
    61.72.Hh
    61.72.Lk
    61.72.J-
    Opis:
    The cyclic strain localization in crystalline materials subjected to cyclic loading results in specific dislocation arrangement in persistent slip bands consisting of alternating dislocation rich and dislocation poor volumes. In the present model the interaction of mobile dislocations in persistent slip band leading to the formation of point defects during cyclic straining is considered. Point defects are steadily produced and simultaneously annihilated due to localized cyclic straining. The non-equilibrium point defects migrate to the matrix and result in transfer of matter between persistent slip band and the matrix and formation of the internal stresses both in the persistent slip band and in the matrix. Plastic relaxation of internal stresses leads to the formation of the characteristic surface relief in the form of persistent slip markings (extrusions and intrusions). Process of point defect migration is quantitatively described and the form of extrusion and parallel intrusions is predicted under some simplifying assumptions. The predictions of the model are discussed and predicted surface relief is compared with selected observations of surface relief produced by cyclic straining.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 4; 675-680
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Grain-Subgrain Structure and Vacancy-Type Defects in Submicrocrystalline Nickel at Low Temperature Annealing
    Autorzy:
    Kuznetsov, P.
    Lider, A.
    Bordulev, Yu.
    Laptev, R.
    Rakhmatulina, T.
    Korznikov, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402134.pdf
    Data publikacji:
    2015-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.37.Ef
    61.72.J-
    61.72.Lk
    61.72.-y
    81.40.Ef
    78.70.Bj
    Opis:
    Scanning tunneling microscopy, positron annihilation and X-ray diffraction were applied for the study of annealing of submicrocrystalline nickel prepared by equal channel angular pressing. Several processes were revealed in the structure of submicrocrystalline nickel on different scale levels during annealing in the range Δ T=(20÷360)°C. A decrease of grain nonequiaxiality and further structure refinement were observed with a temperature increase in the range Δ T=(20÷180)°C. Subgrain growth with maximum =60 nm at 120°C occurred on the lower scale level within the same temperature range. Grain growth and microstress decrease in submicrocrystalline nickel observed at T>180°C indicate the beginning of recrystallization. The main positron trap centers were identified in submicrocrystalline nickel within different temperature ranges. In as-prepared samples positrons are trapped at dislocation-type defects and vacancy clusters that can include up to 5 vacancies. At the annealing temperature Δ T=(20÷180)°C positrons are trapped at low-angle boundaries enriched by impurities. Within the range Δ T=(180÷360)°C the dominant trap is dislocations.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 4; 714-717
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Simulation study of topological point defects in graphitic layer - curvature effect and pair correlation function analysis
    Autorzy:
    Hawelek, L.
    Powiązania:
    https://bibliotekanauki.pl/articles/1075560.pdf
    Data publikacji:
    2016-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.ue
    61.72.J-
    61.43.Bn
    61.66.Fn
    61.05.C-
    Opis:
    The effect of three types of topological defects, single vacancy, double vacancy and the Stone-Thrower-Wales defect on the atomic arrangement in a single graphitic layer is studied using computer simulations. The topological defects were positioned on the perfect hexagonal graphitic layer 20 Å in diameter with different distance from the layer edge and then the geometry of the system was independently optimized using the reactive bond order potential, the semi-empirical quantum-chemical PM7 and the density functional theory method. Curvature and the distortion of the graphitic layer caused by the defects are analyzed and their influence on the pair correlation function is discussed.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 3; 811-816
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Positron Annihilation in Magnetite Nanopowders Prepared by Co-Precipitation Method
    Autorzy:
    Durak, K.
    Wiertel, M.
    Surowiec, Z.
    Miaskowski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033944.pdf
    Data publikacji:
    2017-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.07.Wx
    47.65.Cb
    78.70.Bj
    61.72.J-
    61.72.Mm
    68.37.Hk
    Opis:
    Nanosized iron oxide powders are materials considered with regard to its application in medical therapy called hyperthermia. Magnetite nanopowders with crystallite size varying from 6.6 to 11.8 nm have been prepared by the co-precipitation method. In this study a change of a crystallite size is driven mainly by varying of initial pH of water ammonia solution in which a process of magnetite precipitation runs. Crystallographic structures and phase composition obtained samples and the size of magnetite nanoparticles were determined by X-ray diffraction method. Positron lifetime spectroscopy has been used to assess defectiveness of microstructure. Experimental positron annihilation spectra were successfully resolved into three lifetime components. It appears that from point of view of microstructure the defects concentrations in studied nanopowder samples are very high which causes a saturation of positron trapping.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 5; 1593-1597
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Depth Profiling of Defects in He Implanted $SiO_2$
    Autorzy:
    Mariazzi, S.
    Toniutti, L.
    Brusa, R.
    Duarte Naia, M.
    Karbowski, A.
    Karwasz, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812538.pdf
    Data publikacji:
    2008-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.60.+z
    78.70.Bj
    68.55.-a
    61.82.Ms
    61.72.J-
    Opis:
    Thin layer of $SiO_2$ thermally grown on p-type Si was implanted with $He^+$ ions at 30 keV with a dose of $5×10^{15}$ ions/$cm^2$. $SiO_2//Si$ samples were depth profiled by Doppler broadening positron annihilation spectroscopy to identify induced defects in the silicon oxide, at the interface and in the Si substrate. In one sample the silicon dioxide layer was removed by etching after implantation. It is shown that removing the silicon dioxide layer some more information about defects into the substrate can be found.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 5; 1447-1453
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thermoelectric Promise of $(In_xSn_x)Co_4Sb_{12}$ Materials
    Autorzy:
    Godart, C.
    Lopes, E.
    Gonçalves, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1813760.pdf
    Data publikacji:
    2008-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.15.Jf
    61.43.-j
    Opis:
    We report on a new series of filled skutterudites derived from $CoSb_3$ with double filling of the cage (by In, Sn) in order to lower the thermal conductivity. As expected for Co-rich side samples, the Seebeck coefficient indicates n-type, with surprisingly high values at 300 K.
    Źródło:
    Acta Physica Polonica A; 2008, 113, 1; 403-406
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Spin-Polarized and Normal Hopping Magnetoresistance in Heavily Doped Silicon
    Autorzy:
    Fedotov, A.
    Prischepa, S.
    Danilyuk, A.
    Svito, I.
    Zukowski, P.
    Powiązania:
    https://bibliotekanauki.pl/articles/1365745.pdf
    Data publikacji:
    2014-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.uf
    72.20.My
    75.76.+j
    Opis:
    Investigation of electrical resistivity ρ and magnetoresistance in single crystalline n-type silicon heavily doped with antimony in the temperature range ΔT=5-300 K and at the magnetic inductance B up to 8 T was performed. It was established that, for the temperature range ΔT=25-300 K the conductivity is of activation type, while for ΔT=5-25 K it is of variable range hopping and is described by the Mott law. Parameters of the Mott hopping were calculated. It was shown that, to explain the experimental data, the spin polarized hopping via the occupied states has to be taken into account. The obtained parameters revealed that for the low temperature range ΔT=5-11 K the spin polarized hopping dominates, while for ΔT=11-20 K the spin polarized transport is accompanied by the wave function contraction.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 6; 1271-1274
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Analysis of CMSX-4 single-crystalline turbine blades root by electron and X-ray diffraction methods
    Autorzy:
    Krawczyk, J.
    Zubko, M.
    Bogdanowicz, W.
    Tondos, A.
    Sieniawski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1058074.pdf
    Data publikacji:
    2016-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.10.Aj
    61.72.Ff
    61.05.J-
    Opis:
    The root of single-crystalline turbine blade made of CMSX-4 superalloy were studied. The studied blade was produced by the Bridgman technique in industrial ALD furnace at withdrawal rate of 3 mm/min. The samples for investigations were cut from the blade root parallel to the withdrawal direction. Metallographic sections of longitudinal samples planes were prepared for further investigations. The samples were analysed using scanning electron microscopy and the Laue diffraction studies. The crystal orientations in macro-scale were determined by analysis of the Laue pattern and local crystal orientations were studied by electron backscattered diffraction technique. Morphology of dendrites were examined by analysis of scanning electron microscopy macro-images. Study of subgrain structure was performed by X-ray diffraction topography. The sharp parallel contrast bands, visible on the X-ray topograms, were related with dendrite cores, arranged with the same direction. Additionally, the low angle boundaries were formed in certain samples, visible on the topograms as contrast shifts. Step changes of local crystal orientation in certain areas were observed on the electron backscattered diffraction maps. The electron backscattered diffraction crystal orientation maps were related to the misorientation visualized in topograms.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 4; 1104-1106
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Raman Spectroscopy for the Analysis οf Temperature-Dependent Plastic Relaxation οf SiGe Layers
    Autorzy:
    Pezzoli, F.
    Bonera, E.
    Bollani, M.
    Sanguinetti, S.
    Grilli, E.
    Guzzi, M.
    Isella, G.
    Chrastina, D.
    von Känel, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807828.pdf
    Data publikacji:
    2009-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Lk
    61.72.uf
    62.20.mj
    62.20.mm
    78.30.-j
    Opis:
    Novel architectures for electronics and photonics are expected to be developed using the forthcoming $Si_{1-x}Ge_{x}$ technology. However, in $Si_{1-x}Ge_{x}$-based heterostructures, materials and design issues rely on accurate control of strain and composition of the alloy. The Raman spectroscopy has rapidly emerged as a reliable technique for the quantitative determination of such parameters on a sub-micrometric scale. In this work we present an investigation of the effects of the growth conditions of $Si_{1-x}Ge_{x}$ graded layers on dislocation nucleation and interaction. In particular, we focus on the crucial role the deposition temperature plays in the dislocation kinetics. The analysis of threading dislocation densities is accompanied by a quantitative measurement of the residual strain in $Si_{1-x}Ge_{x}$/Si heterostructures, carried out by means of the Raman scattering. Our approach is effective in studying the physical mechanism governing dislocation multiplication and the sharp transition from a state of brittleness to a state of ductility within a narrow temperature window.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 1; 78-80
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Orientation of Single Dibenzanthanthrene Molecules in Solid Xenon
    Autorzy:
    Sepioł, J.
    Kołos, R.
    Jasny, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1814017.pdf
    Data publikacji:
    2007-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    33.50.-j
    61.66.Bi
    61.66.Hq
    61.72.Ww
    Opis:
    The spatial distributions of individual dibenzanthanthrene electronic transition dipole moments in solid Xe was investigated at the single molecule level, with the high-resolution fluorescence spectroscopy. Samples were prepared by the co-deposition of dibenzanthanthrene/Xe vapours onto the 50 K surface. The results indicate that the orientation of planar aromatic molecules is preferentially parallel to the trapping surface.
    Źródło:
    Acta Physica Polonica A; 2007, 112, S; S-121-S-126
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Effect of $Fe^{2+} (Fe^{3+})$ Doping on Structural Properties οf $CeO_2$ Nanocrystals
    Autorzy:
    Radović, M.
    Dohčević-Mitrović, Z.
    Paunović, N.
    Šćepanović, M.
    Matović, B.
    Popović, Z.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807838.pdf
    Data publikacji:
    2009-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.uj
    78.30.-j
    75.50.Tt
    Opis:
    We have measured the Raman scattering and magnetization of pure and $Fe^{2+}(Fe^{3+})$ doped $CeO_2$ nanopowders at room temperature. The Raman scattering spectra revealed the existence of $CeO_2$ fluorite cubic structure for all investigated samples. The Raman active mode at about 600 $cm^{-1}$, seen in all samples, can be ascribed to the $CeO_2$ intrinsic oxygen vacancies. Additional Raman modes at 720 $cm^{-1}$, 1320 $cm^{-1}$ and 1600 $cm^{-1}$, which appear in the spectra of doped samples, can be assigned to maghemite $(γ-Fe_2O_3)$ cation deficient structure, to $2ω_{LO}$ IR-allowed overtone and two magnon structure, respectively. This implies that our powders are composed of mixed valence states and have defective structure. Presence of oxygen defect states and magnetic ions can be responsible for the observed ferromagnetism at room temperature in both pure and Fe doped samples.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 1; 84-87
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Acousto-electric interaction in magnetised piezoelectric semiconductor quantum plasma
    Autorzy:
    Ghosh, S.
    Muley, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1058496.pdf
    Data publikacji:
    2016-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.50.+b
    52.35.-g
    61.72.uj
    77.65.-j
    Opis:
    Amplification of an acoustic wave is considered in magnetised piezoelectric n-type semiconductor plasma under quantum hydrodynamic regime. The important ingredients of this study are the inclusion of quantum diffraction effect via the Bohm potential, statistical degeneracy pressure, and externally applied magnetostatic field in the momentum balance equation of the charged carriers. A modified dispersion relation is derived for evolution of acoustic wave by employing the linearization technique. Detailed analysis of quantum modified dispersion relation of acoustic wave is presented. For a typical parameter range, relevant to n-InSb at 77 K, it is found that the non-dimensional quantum parameter H reduces the gain while magnetic field enhances the gain of acoustic wave. The crossover from attenuation to amplification occurs at (ϑ₀/ϑₛ)=1 and this crossover point is found to be unaffected by quantum correction and magnetic field. It is also found that the maximum gain point shifts towards lower drift velocity regime due to the presence of magnetic field while quantum parameter H shifts this point towards higher drift velocity. Numerical results on the acoustic gain per radian and acoustic gain per unit length are also illustrated. Our results could be useful in understanding acoustic wave propagation in magnetised piezoelectric semiconductor in quantum regime.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 6; 1401-1405
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Defect Transformations in Ion Bombarded InGaAsP
    Autorzy:
    Ratajczak, R.
    Turos, A.
    Stonert, A.
    Nowicki, L.
    Strupiński, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504046.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.43.-j
    61.72.-y
    81.05.-t
    82.80.-d
    85.40.-e
    Opis:
    Damage buildup and defect transformations at temperatures ranging from 15 K to 300 K in ion bombarded InGaAsP epitaxial layers on InP were studied by in situ Rutherford backscattering/channeling measurements using 1.4 MeV $\text{}^4He$ ions. Ion bombardment was performed using 150 keV N ions and 580 keV As ions to fluences ranging from 5 × $10^{12}$ to 6 × $10^{14}$ at./$cm^2$. Damage distributions were determined using the McChasy Monte Carlo simulation code assuming that they consist of randomly displaced lattice atoms and extended defects producing bending of atomic planes. Steep damage buildup up to amorphisation with increasing ion fluence was observed. Defect production rate increases with the ion mass and decreases with the implantation temperature. Parameters of damage buildup were evaluated in the frame of the multi-step damage accumulation model. Following ion bombardment at 15 K defect transformations upon warming up to 300 K have also been studied. Defect migration beginning above 100 K was revealed leading to a broad defect recovery stage with the activation energy of 0.1 eV for randomly displaced atoms and 0.15 eV for bent channels defects.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 136-139
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Channeling Study of Co and Mn Implanted and Thermally Annealed Wide Band-Gap Semiconducting Compounds
    Autorzy:
    Ratajczak, R.
    Werner, Z.
    Barlak, M.
    Pochrybniak, C.
    Stonert, A.
    Zhao, Q.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402209.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.43.-j
    61.72.-y
    81.05.-t
    82.80.-d
    85.40.-e
    Opis:
    The defect build-up, structure recovery and lattice location of transition metals in ion bombarded and thermally annealed ZnO and GaN single crystals were studied by channeled Rutherford backscattering spectrometry and channeled particle-induced X-ray emission measurements using 1.57 MeV ⁴He ions. Ion implantation to a fluence of 1.2×10¹⁶ ions/cm² was performed using 120 keV Co and 120 keV Mn ions. Thermal annealing was performed at 800°C in argon flow. Damage distributions were determined using the Monte Carlo McChasy simulation code. The simulations of channeled Rutherford backscattering spectra reveal that the ion implantation leads to formation of two types of defect structures in ZnO and GaN such as point and extended defects, such as dislocations. The concentrations of both types of defects are at a comparable level in both structures and for both implanted ions. Differences between both implantations appear after thermal annealing where the Mn-doped ZnO reveals much better transition metals substitution and recovery effect.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 845-848
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Characterization of Materials by Raman Scattering
    Autorzy:
    Kozielski, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047294.pdf
    Data publikacji:
    2007-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.-j
    62.20.-x
    61.72.-y
    36.20.Ng
    Opis:
    The paper reports on the use of phonon spectra obtained with the Raman spectroscopy for characterization of different materials. The Raman scattering spectra obtained for zinc selenide crystals, mixed crystals zinc selenide admixtured with magnesium or beryllium, oxide crystals including strontium lanthanum gallate, molecular crystals of triammonium hydrogen diseleniate and a homologous series of polyoxyethylene glycols are analysed.
    Źródło:
    Acta Physica Polonica A; 2007, 111, 3; 343-360
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Study of SrLaAlO$\text{}_{4}$ and SrLaGaO$\text{}_{4}$ Substrate Crystals by Raman Spectroscopy
    Autorzy:
    Drozdowski, M.
    Kozielski, M.
    Pajączkowska, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1964243.pdf
    Data publikacji:
    1997-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.-y
    78.30.-j
    33.20.Fb
    63.20.-e
    Opis:
    In this paper the study of SrLaAlO$\text{}_{4}$ and SrLaGaO$\text{}_{4}$ single crystals using the Raman scattering method is presented. The obtained results are discussed in terms of nature of the crystallografic imperfections and point defects which might arise during the crystal growth process.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 1; 139-142
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Anharmonicity Effects in Nanocrystals Studied by Raman Scattering Spectroscopy
    Autorzy:
    Dohčević-Mitrović, Z.
    Popović, Z.
    Šćepanović, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807800.pdf
    Data publikacji:
    2009-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    63.22.-m
    78.67.Bf
    78.30.-j
    61.72.uj
    Opis:
    Phonon-phonon interactions were investigated in various nanocrystalline powders like anatase $TiO_{2-δ}$, pure $CeO_{2-δ}$ and ceria doped with Nd(Gd) analyzing temperature dependent Raman spectra of these systems. Phonon confinement model based on size, inhomogeneous strain and anharmonic effects was used to properly describe the evident changes present in the Raman spectra of pure and doped ceria nanocrystalline samples. In small particles of pure and doped ceria nanocrystals, when size effects have minor impact on Raman modes, four phonon anharmonic processes prevail under the three-phonon ones. When nanopowdered particles are grown enough size effects provoke changes of the anharmonic interactions when three-phonon coupling prevails over the four-phonon anharmonic processes. In nanocrystalline anatase $TiO_2$ evident blueshift of the most prominent $E_g$ Raman mode probably originates from dominant four-phonon anharmonic interactions.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 1; 36-41
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Synthesis and Characterization of a Water-Soluble Ionic Polyacetylene Derivative
    Autorzy:
    Gal, Y.
    Jin, S.
    Park, J.
    Lim, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1398739.pdf
    Data publikacji:
    2016-04
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    72.80.L
    73.61.P
    78.20.C
    78.30.J
    Opis:
    A new water-soluble ionic polyacetylene was synthesized by the acid-catalyzed polymerization of 2-ethynylpyridine using acrylic acid. The polymerization proceeded well to give a high yield of polymer. The acetylenic C ≡ C bond stretching (2110 cm¯¹) and acetylenic ≡ C-H bond stretching (3293 cm¯¹) peaks of 2-ethynylpyridine monomer were not seen in the FT-IR spectrum of polymer. The electro-optical and electrical properties of the ionic polyacetylene were measured and discussed. The resulting polymer showed strong maximum at 513 nm in the UV-Visible absorption, which is corresponding to photon energy of 2.42 eV. The energy gap width of polymer was estimated to be of 2.08 eV. It was observed that the electrochemical process of polymer is reproducible in the potential range of -1.80 to 1.60 V vs Ag/AgNO₃. HOMO and LUMO levels of polymer were 4.85 eV and 2.77 eV, respectively.
    Źródło:
    Acta Physica Polonica A; 2016, 129, 4; 642-646
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    The microstructure and thermal stability of the two-component melt-spun Ni₅₅Fe₂₀Cu₅P₁₀B₁₀ TCMS amorphous/amorphous composite
    Autorzy:
    Ziewiec, K.
    Wojciechowska, M.
    Prusik, K.
    Mucha, D.
    Jankowska-Sumara, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/1075849.pdf
    Data publikacji:
    2016-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.05.cp
    61.05.J-
    81.05.Kf
    81.05.Pj
    72.15.Cz
    68.60.Dv
    Opis:
    The aim of this study is to present the special features and properties of the two alloys of similar average chemical composition Ni₅₅Fe₂₀Cu₅P₁₀B₁₀, processed through two different routes. The first alloy was melt-spun after the ejection of homogeneous liquid using a traditional single chamber crucible, and the second alloy was ejected from a double chamber crucible as two separate liquids: i.e., Ni₄₀Fe₄₀B₂₀ and Ni₇₀Cu₁₀P₂₀, mixing only at the orifice area. The studies of the microstructure of the composite alloy were performed through the use of transmission electron microscopy and scanning electron microscopy. The Ni₅₅Fe₂₀Cu₅P₁₀B₁₀ two-chamber melt-spun (TCMS) alloy, as well as the homogeneous Ni₅₅Fe₂₀Cu₅P₁₀B₁₀, Ni₄₀Fe₄₀B₂₀, and Ni₇₀Cu₁₀P₂₀ alloys, were heated to elevated temperatures and their characteristics studied by means of differential scanning calorimetry. The temperature resistivity change method was applied to the examination of the Ni₅₅Fe₂₀Cu₅P₁₀B₁₀ TCMS alloy. The phase composition after heat treatment was investigated using X-ray diffraction. The results of the microstructure examination show that the TCMS alloy is an amorphous/amorphous composite, and is notable for its Ni-Fe-B and Ni-Cu-P stripes resulting from its differentiated chemical composition. Another unique feature of the TCMS alloy is that it retains its wood-like morphology even after high-temperature heat treatment. The crystallisation of the TCMS alloy starts from the Ni-Cu-P constituent and ends with the Ni-Fe-B areas of the sample. The results are discussed on the basis of previous work completed on amorphous matrix composites.
    Źródło:
    Acta Physica Polonica A; 2016, 130, 4; 927-930
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Influence of Hot Implantation on Residual Radiation Damage in Silicon Carbide
    Autorzy:
    Rawski, M.
    Żuk, J.
    Kulik, M.
    Droździel, A.
    Lin, L.
    Prucnal, S.
    Pyszniak, K.
    Turek, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1504145.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.U-
    78.30.-j
    61.05.Np
    63.50.-x
    79.20.Rf
    81.70.Fy
    Opis:
    Remarkable thermomechanical and electrical properties of silicon carbide (SiC) make this material very attractive for high-temperature, high-power, and high-frequency applications. Because of very low values of diffusion coefficient of most impurities in SiC, ion implantation is the best method to selectively introduce dopants over well-defined depths in SiC. Aluminium is commonly used for creating p-type regions in SiC. However, post-implantation radiation damage, which strongly deteriorates required electric properties of the implanted layers, is difficult to anneal even at high temperatures because of remaining residual damage. Therefore implantation at elevated target temperatures (hot implantation) is nowadays an accepted method to decrease the level of the residual radiation damage by avoiding ion beam-induced amorphization. The main objective of this study is to compare the results of the Rutherford backscattering spectroscopy with channeling and micro-Raman spectroscopy investigations of room temperature and 500°C $Al^{+}$ ion implantation-induced damage in 6H-SiC and its removal by high temperature (up to 1600°C) thermal annealing.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 192-195
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
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