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Wyszukujesz frazę "61.18.Bn" wg kryterium: Temat


Wyświetlanie 1-4 z 4
Tytuł:
Oxygen Emissions from Single-Crystalline Fe$\text{}_{3}$O$\text{}_{4}$ Surfaces Induced by Low-Energy Ion Bombardments
Autorzy:
Kim-Ngan, N.-T. H.
Soszka, W.
Powiązania:
https://bibliotekanauki.pl/articles/2046830.pdf
Data publikacji:
2006-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.-p
61.18.Bn
Opis:
Negative-charged ion energy spectra of the Fe$\text{}_{3}$O$\text{}_{4}$ (001) and (111) surface revealed large peaks attributed to the O$\text{}^{-}$ recoils from a binary collision. Under Ar$\text{}^{+}$ ion bombardments such an emission was largely affected by the screening effect of the Fe ions. A distinguished peak related to the O$\text{}^{+}$ recoil ions was observed under Ne$\text{}^{+}$ ion bombardments, while such a peak was merged into the high background in the case of Ar$\text{}^{+}$ ion ones. A weak effect from the Verwey transition was found on oxygen emissions. For the (111) surface a small peak characteristic of the O$\text{}^{+}$ recoils from double collisions appeared in the energy spectra around 140-170 K and a minimum was observed in both R$\text{}^{+}$(T) and R$\text{}^{-}$(T) curves under 6 keV Ne$\text{}^{+}$ ion beam.
Źródło:
Acta Physica Polonica A; 2006, 109, 6; 715-721
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Scanning Tunneling Spectra and Low Energy Ion Scattering Studies of the Verwey Transition in MBE Fe$\text{}_{3}$O$\text{}_{4}$ (100) Thin Film
Autorzy:
Kim-Ngan, N.-T. H.
Soszka, W.
Hietschold, M.
Powiązania:
https://bibliotekanauki.pl/articles/2024029.pdf
Data publikacji:
2001-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.16.Ch
61.18.Bn
71.30.+h
Opis:
The (100) surface of magnetite Fe$\text{}_{3}$O$\text{}_{4}$ thin film was studied by a UHV low-temperature scanning tunneling microscope and by an ion scattering spectroscopy. The tunneling spectra revealed a widening of the gap with decreasing temperature, which may be related to the metal-insulator phase transition in this material. A strong effect of this phase transition on ion scattering from such a surface was observed. The temperature dependence of the scattered ion yield, R$\text{}^{+}$(T), revealed two minima at around 100 K and at 125 K under Ne$\text{}^{+}$ bombardment with the primary energy up to 6 keV. The disappearance of the high-temperature minimum at a bombarding energy of 6.5 keV gave a further evidence for the ion velocity dependence of the character of the R$\text{}^{+}$(T) curve, which has been first observed for a MBE Fe$\text{}_{3}$O$\text{}_{4}$ (111) film surface.
Źródło:
Acta Physica Polonica A; 2001, 99, 2; 267-276
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Studies of the Verwey Transition in Magnetite
Autorzy:
Tarnawski, Z.
Wiecheć, A.
Madej, M.
Nowak, D.
Owoc, D.
Król, G.
Kąkol, Z.
Kolwicz-Chodak, L.
KozŁowski, A.
Dawid, T.
Powiązania:
https://bibliotekanauki.pl/articles/2041527.pdf
Data publikacji:
2004-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.18.Bn
75.40.-s
71.20.Lp
Opis:
Studies of the specific heat and simultaneous AC magnetic susceptibility (ρ') and electric resistance of stoichiometric magnetite single crystal are presented. The temperature hysteresis of the Verwey transition is of 0.03 K found from the specific heat data confirming its first-order character. The continuous temporal change of ρ' at T$\text{}_{V}$ can be switched off by an external magnetic field without affecting the transition. The electrical resistance decreases continuously with increasing temperature with a rapid change of slope at the point when the phase transition is completed. It was concluded that the magnetic degrees of freedom do not actively participate in the transition and that the entropy released at T$\text{}_{V}$ may come from ordering electrons.
Źródło:
Acta Physica Polonica A; 2004, 106, 5; 771-775
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Combined Analyses of Ion Beam Synthesized Layers in Porous Silicon
Autorzy:
Ramos, A. R.
Pászti, F.
Horváth, Z. E.
Vázsonyi, É.
Conde, O.
da Silva, M. F.
da Silva, M. R.
Soares, J. C.
Powiązania:
https://bibliotekanauki.pl/articles/2028988.pdf
Data publikacji:
2001-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.10.-i
61.18.Bn
61.43.Gt
68.55.Ln
Opis:
High dose ion implantation was used to form polycrystalline silicide films on porous silicon with different native concentrations of light impurities (C and O). Porous silicon layers severalμm thick were implanted with 170 keV Cr$\text{}^{+}$ ions to fluences of 3×10$\text{}^{17}$ ions/cm$\text{}^{2}$ both at room temperature and 450ºC. Similar samples were implanted with 100 keV Co$\text{}^{+}$ ions to fluences of 2×10$\text{}^{17}$ ions/cm$\text{}^{2}$ at room temperature, 350ºC, and 450ºC. The formed silicide compounds were studied by Rutherford backscattering spectrometry, elastic recoil detection, glancing incidence X-ray diffraction, and four point-probe sheet resistance measurements. Selected Co implanted samples were analysed by cross-section transmission electron microscopy. Results show that the light impurities were partially expelled from the forming silicide layer. Combining cross-section transmission electron microscopy with ion beam methods it was possible to show that, in the implanted region, the porous structure collapses and densifies during implantation, but the underlying porous silicon remains intact. The layer structure, as well as the quality and type of the formed silicide, were found to depend on the original impurity level, implantation temperature, and annealing.
Źródło:
Acta Physica Polonica A; 2001, 100, 5; 773-780
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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