- Tytuł:
- Enhancing Responsivity of Porous GaN Metal-Semiconductor-Metal Ultraviolet Photodiodes by Using Photoelectrochemical Etching
- Autorzy:
-
Al-Heuseen, K.
Hashim, M. - Powiązania:
- https://bibliotekanauki.pl/articles/1490759.pdf
- Data publikacji:
- 2012-01
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.67.Rb
42.79.Pw - Opis:
- In this paper porous and as-grown GaN metal-semiconductor-metal photodiodes with Ni contact electrodes were fabricated. Structural and optical properties were studied of the both samples. Both detectors show a sharp cut-off wavelength at 370 nm, with a maximum responsivity of 0.14 A/W and 0.065 A/W achieved at 360 nm for porous GaN and as-grown metal-semiconductor-metal photodetectors, respectively. The metal-semiconductor-metal photodiode based on porous GaN shows enhanced twice magnitude of responsivity relative to the as-grown GaN metal-semiconductor-metal photodiode. Enhancement of responsivity can be attributed to the relaxation of stress and reduction of surface pit density in the porous sample. The porous sample showed a significantly low dark current at 5 V as compared to as grown sample.
- Źródło:
-
Acta Physica Polonica A; 2012, 121, 1; 71-73
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł