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    Wyświetlanie 1-11 z 11
    Tytuł:
    Ultra-Narrow Laser for Optical Frequency Reference
    Autorzy:
    Lisak, D.
    Cygan, A.
    Bielska, K.
    Piwiński, M.
    Ozimek, F.
    Ido, T.
    Trawiński, R.
    Ciuryło, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1489836.pdf
    Data publikacji:
    2012-03
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.60.By
    42.62.Eh
    Opis:
    We present ultra-narrow line width, tunable diode laser system which will be used as a local oscillator in an optical atomic clock and for precision spectroscopy of Sr near 689 nm. Design of the high finesse optical cavity used as short-term frequency reference is optimized with respect to insensitivity to vibrations. We achieved laser line width of about 8 Hz, measured by comparison of two identical systems. The relative phase lock of two lasers is better than 150 mHz. Laser tunability and usefulness for precison spectroscopy were demonstrated through line shape measurement of a 20 kHz wide resonance of the optical cavity.
    Źródło:
    Acta Physica Polonica A; 2012, 121, 3; 614-621
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Dispersive Controlling of Femtosecond Laser Radiation: New Opportunities and Developments
    Autorzy:
    Molchanov, V.
    Yushkov, K.
    Powiązania:
    https://bibliotekanauki.pl/articles/1377941.pdf
    Data publikacji:
    2015-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.60.By
    42.79.Jq
    Opis:
    The paper is devoted to new trends in dispersive control techniques for ultrafast light emission. Acoustooptical dispersive delay lines for controlling the spectral components and phase composition of ultrashort laser pulses are considered. The method of super high frequency modulation of chirped femtosecond laser pulses is proposed. Theoretical approach to dispersive pulse shaping is supported by the experiments.
    Źródło:
    Acta Physica Polonica A; 2015, 127, 1; 20-24
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Pulsed Power System for the Orion High Power Laser
    Autorzy:
    Mead, M.
    Moncho-Banuls, S.
    Pottier, S.
    Brasile, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1807863.pdf
    Data publikacji:
    2009-06
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.60.By
    84.60.Ve
    Opis:
    This paper describes the design and testing of the pulsed power system for the Orion Laser, which will be used for high temperature and density plasma physics research. The system supplies 8 MJ of energy to laser amplifiers and Faraday rotators. It consists of 17 capacitor bank modules, each with up to sixteen 150 μF charge storage capacitors, 25 kV power supply and controls. The energy is delivered by spark-gap switches to give a pre-pulse to ionise the flashlamps and a main pulse of 490 μs. The system delivers 5 shots a day with less than 0.2% variation in charge voltage.
    Źródło:
    Acta Physica Polonica A; 2009, 115, 6; 978-979
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    X-Ray Lasers, Operation and Applications
    Autorzy:
    Fiedorowicz, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1964129.pdf
    Data publikacji:
    1997-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.60.By
    32.30.Rj
    Opis:
    X-ray lasers are currently being studied in many laboratories around the world. This paper gives a short description of X-ray laser physics, presents the parameters of existing X-ray lasers and their applications. Research aimed at developing an efficient X-ray laser acceptable to potential users is presented in the final part of the paper.
    Źródło:
    Acta Physica Polonica A; 1997, 91, 5; 945-951
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Superconducting Cavity Utilization for Linear Accelerator Systems
    Autorzy:
    Yildiz, H.
    Cakir, R.
    Porsuk, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1401998.pdf
    Data publikacji:
    2015-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    29.20.Ej
    42.60.By
    Opis:
    Self amplified stimulated emission free electron laser production from electron energy above 1.5 GeV is studied to obtain 1-100 nm laser wavelength. Design simulations of linear accelerating system with gun and enjector system has been done in more detail by considering space charge effect for electron beam. Electromagnetic field for superconducting cavities, solenoid fields, cavity defects such as Higher Order Modes, Multipacting, Lorentz Force Detuning, and beam behaviour along the beamline are very important details for this study. Optimised cavity cell design layout are provided in order to obtain quality factor $10^9$ for designed cavities throughout the main linear acceleration. To determine coupling factor, and zero modes and also other modes with relative errors are searched.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 2B; B-246-B-247
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Noise Response and Stability in Injection Locked Semiconductor Ring Laser
    Autorzy:
    Memon, M.
    Fathallah, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1195007.pdf
    Data publikacji:
    2014-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Wd
    42.65.Re
    42.60.By
    42.65.Pc
    Opis:
    Stability and effects of optical injection locking in semiconductor ring laser is modeled in detail. It is verified that the injection locking in slave semiconductor ring laser depends on detuning frequency and external optical injection ratio between the master laser and the slave semiconductor ring laser. The stability of injection was locked using the resonance frequency and damping factor. The parasitic phase modulation response due to amplitude modulation (chirp response) is derived and simulated. Similarly parasitic amplitude modulation due to phase modulation response is also investigated.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 2; 454-455
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Dependence of Modulation Bandwidth on Size of Optical Injection Locked Semiconductor Ring Laser
    Autorzy:
    Memon, M.
    Fathallah, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1290582.pdf
    Data publikacji:
    2014-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Wd
    42.65.Re
    42.60.By
    42.65.Pc
    Opis:
    It has been successfully investigated for the first time that strength of optical injection locking also depends on the size of semiconductor ring laser. Theoretical study for frequency response of optical injection locking semiconductor ring laser in the master slave configuration using direct, amplitude and phase modulation of master laser is discussed. In the unidirectional regime the locking range of semiconductor ring laser becomes wider when semiconductor ring laser with smaller size is used. Simulation results predict an incredible enhancement in the modulation bandwidth (> 500 GHz) of the slave semiconductor ring laser when used with smaller laser cavity length (50 μm) in the stable unidirectional regime.
    Źródło:
    Acta Physica Polonica A; 2014, 125, 2; 462-464
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Two-Frequency Lasers: from Excess Quantum Noise to RF Photonics Applications
    Autorzy:
    Alouini, M.
    Bretenaker, F.
    Brunel, M.
    Chauvat, D.
    Emile, O.
    Lai, N.
    Le Floch, A.
    Ropars, G.
    Vallet, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2030275.pdf
    Data publikacji:
    2002-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Ah
    42.50.Ar
    42.50.Lc
    42.60.By
    42.60.Gd
    Opis:
    We illustrate the physics of two-frequency lasers by two examples. The first example illustrates the fundamental consequences of the existence of two eigenstates on the laser line width. We indeed show experimentally that the non-orthogonality of these two eigenstates results in an increase in the laser quantum noise. We also give a physical explanation of this vectorial excess noise factor. The second example illustrates the capabilities of two-frequency lasers in terms of applications. In the domain of RF frequency generation by optical means, we show how a pulsed two-frequency source can be built for lidar-radar applications and pulsed RF frequency generation.
    Źródło:
    Acta Physica Polonica A; 2002, 101, 1; 7-20
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fast Speed Semiconductor Ring Lasers Using Optical Injection Locking
    Autorzy:
    Memon, M.
    Fathallah, H.
    Yu, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1399665.pdf
    Data publikacji:
    2013-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    42.55.Sa
    42.60.By
    42.60.Fc
    42.65.Pc
    Opis:
    Theoretical study for frequency response and modulation bandwidth of slave semiconductor ring laser in the master-slave configuration using optical injection locking has been investigated. Equations for frequency response of optical injection locking-semiconductor ring laser to the direct modulation, amplitude modulation of master laser, respectively, are derived and simulated. Enhancement in the modulation bandwidth of >100 GHz is reported between negative to positive detuning frequency and increasing injection power ratio.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 2; 180-182
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    From High Electron Mobility GaN/AlGaN Heterostructures to Blue-Violet InGaN Laser Diodes. Perspectives of MBE for Nitride Optoelectronics
    Autorzy:
    Skierbiszewski, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/2043710.pdf
    Data publikacji:
    2005-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    85.35.Be
    42.60.By
    73.21.Cd
    Opis:
    The recent progress in growth of nitride based semiconductor structures made by plasma assisted MBE is presented. This technology is ammonia free and nitrogen for growth is activated in RF plasma source from nitrogen molecules. The new growth mechanism - adlayer enhanced lateral diffusion of adatoms on semiconductor surface is studied in plasma assisted MBE. This mechanism enables us to achieve high quality step-flow epitaxy at temperatures 600-750ºC, much lower than expected from classical estimates based on the melting point of GaN. We show that growth at low temperatures in metal rich (gallium or indium) regime, together with use of low dislocation bulk GaN substrates, results in high quality of (In, Al, Ga)N layers and sharp interfaces. We demonstrate record high mobility of two-dimensional electron gas at GaN/AlGaN interface (with mobility exceeding 100 000 cm$\text{}^{2}$/(V s) at 4.2 K and 2500 cm$\text{}^{2}$/(V s) at 300 K) and report on first blue-violet InGaN multiquantum well laser diodes, operating in 407-422 nm wavelengths range. In this paper, we discuss also properties of strain compensated InAlN/InGaN multiquantum wells grown by plasma assisted MBE which are very attractive for telecommunication applications at 1.5μm wavelengths like electro-optical modulators or all-optical switches.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 4; 635-651
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    High Power Continuous Wave Blue InAlGaN Laser Diodes Made by Plasma Assisted MBE
    Autorzy:
    Skierbiszewski, C.
    Siekacz, M.
    Wiśniewski, P.
    Perlin, P.
    Feduniewicz-Żmuda, A.
    Cywiński, G.
    Smalc, J.
    Grzanka, S.
    Grzegory, I.
    Leszczyński, M.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047002.pdf
    Data publikacji:
    2006-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    85.35.Be
    42.60.By
    73.21.Cd
    Opis:
    Room temperature, continuous wave operation of InGaN multi-quantum wells laser diodes made by rf plasma assisted molecular beam epitaxy at 411 nm wavelength is demonstrated. The threshold current density and voltage were 4.2 kA/cm$\text{}^{2}$ and 5.3 V, respectively. High optical power output of 60 mW was achieved. The lifetime of these laser diodes exceeds 5 h with 2 mW of optical output power. The laser diodes are fabricated on low dislocation density bulk GaN substrates, at growth conditions which resembles liquid phase epitaxy. We demonstrate that relatively low growth temperatures (600-700°C) pose no intrinsic limitations for fabrication of nitride optoelectronic components by plasma assisted molecular beam epitaxy.
    Źródło:
    Acta Physica Polonica A; 2006, 110, 3; 345-351
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-11 z 11

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