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Wyświetlanie 1-6 z 6
Tytuł:
Effects of Solute-Solvent Interactions on Radiationless Decay of Thioketones Excited to Their S$\text{}_{2}$- and T$\text{}_{1}$-States
Autorzy:
Szymański, M.
Balicki, M.
Binkowski, M.
Kubicki, J.
Maciejewski, A.
Pawłowska, E.
Wróżowa, T.
Powiązania:
https://bibliotekanauki.pl/articles/1945389.pdf
Data publikacji:
1996-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
33.50.Dq
33.50.Hv
35.80.Be
Opis:
Spectral and photophysical properties of a few aromatic thioketones in their S$\text{}_{2}$- and T$\text{}_{1}$-states, in particular those determined by their interactions with solvents, are discussed. The reasons for a drastically different behaviour of thioketones in interactions with benzene as well as saturated hydrocarbons and perfluoroalkanes are analysed in more detail. Results of the time-resolved transient absorption measurements in the pico- and nanosecond time scale are given. An analysis of these results proves that a product of the decay of the S$\text{}_{2}$-state of xanthione in benzene is a new transient (τ $\text{}_{1}\text{}_{/}\text{}_{e}$ ≥ 60 ps) individuum which, regarding the system properties and the conditions of the experiment, has been identified as an exciplex in S$\text{}_{2}$-state formed as a result of an efficient interaction with benzene molecule. Also in xanthione//alkane systems the involvement of a transient individuum was proved. Most probably, this individuum was a thioketyl radical which could be formed by hydrogen abstraction from a hydrocarbon molecule by xanthione in the S$\text{}_{2}$-state. Such individua act as intermediates in passing excitation to the triplet states of thioketones and are effective channels of the S$\text{}_{2}$-state decay. The changes observed in the transient absorption spectra of xanthione in C$\text{}_{6}$H$\text{}_{6}$ in the time range of 10$\text{}^{-7}$-10$\text{}^{-6}$ s can be attributed to the formation of an excimer in the T$\text{}_{1}$-state as a result of the T$\text{}_{1}$-state selfquenching.
Źródło:
Acta Physica Polonica A; 1996, 89, 4; 527-546
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Improvement of Efficiency in CdS Quantum Dots Sensitized Solar Cells
Autorzy:
Wageh, S.
Al-Ghamdi, A.
Soylu, M.
Al-Turki, Y.
El Shirbeeny, W.
Yakuphanoglu, F.
Powiązania:
https://bibliotekanauki.pl/articles/1399329.pdf
Data publikacji:
2013-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.35.Be
88.40.hj
72.80.Vp
68.47.Gh
Opis:
CdS quantum dots were coated on $TiO_2$ layer by successive ionic layer adsorption and reaction method. An efficient photovoltaic energy conversion and significant quantum-size effect were observed. The magnitude of the short-circuit photocurrent density $J_{SC}$ was found to be approximately 6.01 $mA//cm^2$ for graphene oxide-incorporated $CdS//TiO_2$ solar cell, while the $J_{SC}$ of only CdS-sensitized solar cells was lower than 4.40 $mA//cm^2$. The efficiency of the $CdS//TiO_2$ solar cell with a graphene oxide layer containing CdS QDs was 60% higher than that of the $CdS//TiO_2$ solar cell. The cell efficiency was remarkably improved with the graphene oxide-incorporation. The carrier recombination of the QDs sensitized solar cells based on CdS-coated $TiO_2$ was significantly suppressed due to photogenerated charge carrier transports resulting from the presence of graphene oxide.
Źródło:
Acta Physica Polonica A; 2013, 124, 4; 750-754
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
The Study of Thermal Properties of GaAs/AlGaAs Quantum Cascade Lasers
Autorzy:
Pruszyńska-Karbownik, E.
Karbownik, P.
Szerling, A.
Kosiel, K.
Bugajski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1807668.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
85.60.-q
85.35.Be
72.80.Ey
Opis:
Temperature change in quantum cascade laser can be estimated by studying the device resistance change. Using this method we compared quantum cascade laser structure mounted on diamond heat spreader and without heat spreader. We have shown that the use of heat spreader reduces temperature increase even by 40%.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-60-S-61
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Surface Investigations of Selected Materials by Low-Energy Ion Scattering Technique
Autorzy:
Goc-Jagło, D.
Sitko, D.
Jagło, G.
Kim-Ngan, N.-T. H.
Soszka, W.
Powiązania:
https://bibliotekanauki.pl/articles/2047339.pdf
Data publikacji:
2007-05
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
68.35.Rh
71.20.Be
71.20.Eh
77.80.Bh
Opis:
Surfaces of three selected materials were investigated by means of low-energy ion-scattering technique: (1) the magnetite (Fe$\text{}_{3}$O$\text{}_{4}$) exhibiting the so-called Verwey transition (T$\text{}_{V}$(bulk)=125 K) accompanied by a small cubic-monoclinic crystal distortion, (2) the intermetallic compound NdMn$\text{}_{2}$ undergoing an antiferromagnetic-paramagnetic phase transition (T$\text{}_{N}$=104 K) accompanied by a large crystal distortion with a volume change of 1%, and (3) the typical insulator BaTiO$\text{}_{3}$ with two structural transitions below 300 K. The primary energy of the (Ne$\text{}^{+}$, Ar$\text{}^{+}$) ion beam was in the range of 4-8 keV, and the low-energy ion-scattering spectra were collected in the temperature range of 85-300 K. A large influence from the Verwey transition on the neutralization and re-ionization of scattered ions from magnetite surface was observed, while no visible change at the magnetic phase transition in NdMn$\text{}_{2}$ was revealed in the low-energy ion-scattering spectra. A strong dependence of the characteristics of the low-energy ion-scattering spectra on the irradiated time was observed for BaTiO$\text{}_{3}$ indicating that this surface was heavily charged by ion bombardments.
Źródło:
Acta Physica Polonica A; 2007, 111, 5; 763-771
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Mid-Infrared GaAs/AlGaAs Quantum Cascade Lasers Technology
Autorzy:
Szerling, A.
Karbownik, P.
Kosiel, K.
Kubacka-Traczyk, J.
Pruszyńska-Karbownik, E.
Płuska, M.
Bugajski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1807678.pdf
Data publikacji:
2009-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
85.60.-q
85.35.Be
72.80.Ey
73.61.Ey
78.66.Fd
Opis:
The fabrication technology of AlGaAs/GaAs based quantum cascade lasers is reported. The devices operated in pulsed mode at up to 260 K. The peak powers recorded at 77 K were over 1 W for the GaAs/$Al_{0.45}Ga_{0.55}As$ laser without anti-reflection/high-reflection coatings.
Źródło:
Acta Physica Polonica A; 2009, 116, S; S-45-S-47
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Molecular Beam Epitaxy Growth for Quantum Cascade Lasers
Autorzy:
Kosiel, K.
Szerling, A.
Kubacka-Traczyk, J.
Karbownik, P.
Pruszyńska-Karbownik, E.
Bugajski, M.
Powiązania:
https://bibliotekanauki.pl/articles/1791281.pdf
Data publikacji:
2009-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
81.15.Hi
85.60.-q
85.35.Be
73.63.-b
63.22.-m
72.80.Ey
73.61.Ey
78.66.Fd
Opis:
The fabrication of quantum cascade lasers emitting at 9 μm is reported. The devices operated in pulsed mode at up to 260 K. The peak powers recorded at 77 K were over 1 W and the slope efficiency η ≈ 0.5-0.6 W/A per uncoated facet. This has been achieved by the use of GaAs/$Al_{0.45}Ga_{0.55}As$ heterostructure, with the "anticrossed-diagonal" design. Double plasmon planar confinement with Al-free waveguide has been used to minimize absorption losses. The double trench lasers were fabricated using standard processing technology, i.e., wet etching and $Si_{3}N_{4}$ for electrical insulation. The quantum cascade laser structures have been grown by molecular beam epitaxy, with Riber Compact 21 T reactor. The stringent requirements - placed particularly on the epitaxial technology - and the influence of technological conditions on the device structure properties were presented and discussed in depth.
Źródło:
Acta Physica Polonica A; 2009, 116, 5; 806-813
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-6 z 6

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