Temat: 35.20.-i - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Potential Parameters and Energy Dependence of Rotational Energy Transfer in Molecular Systems
Autorzy:: Agrawal, P. M.
Garg, V.
Patidar, K. R.
Powiązania:: https://bibliotekanauki.pl/articles/1929537.pdf
Data publikacji:: 1993-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 35.20.-i
Opis:: The cross-sections for rotational transitions in a diatomic molecule due to collision with an atom were computed. An empirical relation is obtained that gives the dependence of cross-sections on the energy of the colliding system and the parameters of the interaction potential energy surface. The results are interpreted to investigate the mechanism of the rotational energy transfer process. The cross-sections are found to depend linearly on the torque, range of the potential, and the collision time. Depending on the variation in the location of classical turning point with change in energy, the cross-sections may increase or decrease with energy or cross-section versus energy curve may exhibit maxima or minima.
Źródło:: Acta Physica Polonica A; 1993, 84, 2; 247-252
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Effect of Interface Coupling on the Energy Spectrum of Triple-Layer Film. Interface-Localized Modes
Autorzy:: Słomian, M.
Puszkarski, H.
Powiązania:: https://bibliotekanauki.pl/articles/1887814.pdf
Data publikacji:: 1991-06
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.20.-r
68.35.-p
75.70.-i
Opis:: Numerical results of a new (interface-rescaling) theory of normal excitations in a triple-layer film are reported. The film is modelled by three one dimensional finite chains coupled together; the coupling across the interface is properly taken into account. The formation process of the film energy spectrum as a result of interface (i.e. inter-chain) coupling is studied, and the exact conditions for the existence of interface-localized modes are established.
Źródło:: Acta Physica Polonica A; 1991, 79, 6; 873-888
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Neural Approximation of Empirical Functions
Autorzy:: Roj, J.
Powiązania:: https://bibliotekanauki.pl/articles/1399400.pdf
Data publikacji:: 2013-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 84.35.+i
07.05.Mh
06.20.-f
06.20.F-
06.20.fb
02.60.Ed
Opis:: The paper presents the results of simulation studies of selected neural network structures used for non-linear function approximation based on a limited accuracy data. There was performed the analysis of the interdependence of the network structure and the size of the set of learning patterns. The approximation inaccuracy was expressed by the uncertainty interval width. The approximation properties of the neural method were compared with those of the piece-wise linear and polynomial: "cubic" and "spline" methods.
Źródło:: Acta Physica Polonica A; 2013, 124, 3; 554-557
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 4.

Tytuł:: The Impact of Bulk Defects, Surface States, and Excitons on Yellow and Ultraviolet Photoluminescence in GaN
Autorzy:: Matys, M.
Miczek, M.
Adamowicz, B.
Żytkiewicz, Z.
Kamińska, E.
Piotrowska, A.
Hashizume, T.
Powiązania:: https://bibliotekanauki.pl/articles/1492736.pdf
Data publikacji:: 2011-12
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.-m
71.35.-y
73.20.-r
71.55.-i
02.70.Dh
Opis:: The quantitative analysis of the influence of deep bulk levels, surface states and excitons on yellow, green and ultraviolet photoluminescence from n-type GaN was performed. The theoretical calculations of recombination rates in the bulk and at n-GaN surface versus UV-excitation intensity were done numerically using finite element method basing on drift-diffusion model assuming point deep levels, continuous energetic distribution of surface states, as well as excitons. The obtained results of the photoluminescence intensity were compared with experimental data (measured within the range from $10^{15}$ to $10^{19}$ photon $cm^{-2} s^{-1}$) for n-GaN samples with various surface passivating layers $(Al_2O_3, SiO_2)$.
Źródło:: Acta Physica Polonica A; 2011, 120, 6A; A-073-A-075
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki