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Wyszukujesz frazę "Yusupov, M." wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł:
Laser Assisted Au Nanocrystal Formation in Conditions of Surface Plasmon Resonance
Autorzy:
Fedorenko, L.
Snopok, B.
Yusupov, M.
Lytvyn, O.
Burlachenko, Yu.
Powiązania:
https://bibliotekanauki.pl/articles/1807920.pdf
Data publikacji:
2009-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.Bx
81.16.Mk
81.07.-b
Opis:
The possibility of the calibrated Au nanoparticles formation in conditions of surface plasmon resonance at irradiation of the Au film/glass structure by pulsed $YAG:Nd^{3+}$-laser radiation is investigated. Sizes of the Au fragments and their surface distribution were studied by the atom force microscopy. The effect of Au nanofragmentation was observed only at the second harmonic irradiation (λ = 0.532 μm). The large difference in the average values of Au nanoparticles sizes -[δ] and distributions between created in the resonance conditions, R = $R_{min}$, -[δ] ∼ 80 nm and in case out of resonance R ≠ $R_{min}$, -[δ] ∼ 1350 nm was established. A high degree of the height sizes homogeneity of Au nanoparticles has been shown by the histogram obtained from the atom force microscopy data. There was verified the conclusion about determining contribution of the plasmon subsystem field in nanofragmentation process of the Au film in the SPR conditions at high laser levels.
Źródło:
Acta Physica Polonica A; 2009, 115, 6; 1075-1077
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Influence of powerful laser radiation on formation of pores in Si by electrochemical etching
Autorzy:
Medvid, A.
Onufrijevs, P.
Fedorenko, L.
Yusupov, M.
Dauksta, E.
Powiązania:
https://bibliotekanauki.pl/articles/385265.pdf
Data publikacji:
2009
Wydawca:
Sieć Badawcza Łukasiewicz - Przemysłowy Instytut Automatyki i Pomiarów
Tematy:
porous Si
laser
optical storage
chemical etching
Opis:
The influence of strongly absorbing N2 laser radiation on pores formation on a surface of Si single crystal has been investigated using optical microscope and atomic force microscope. After irradiation by the laser and subsequent electrochemical etching in HF acid solution morphological changes of the irradiated parts of a surface of Si were observed. At the same time, pores formation on the nonirradiated parts of Si surface took place. The porous part of the Si surface is characterized by strong photoluminescence in red part of spectra with maximum at 1.88 eV. Suppression of the pores formation by laser radiation is explained with inversion of Si type condition from p to n. This fact is explained by Thermogradient effect - generation and redistribution of the intrinsic defects in gradient of temperature. It was shown that the depth of p-Si layer on n-Si ubstrate depends on intensity of laser radiation and it increases with intensity of laser radiation. The results of the investigation can be used for optical recording and storage of information on surface of semiconductors.
Źródło:
Journal of Automation Mobile Robotics and Intelligent Systems; 2009, 3, 4; 166-168
1897-8649
2080-2145
Pojawia się w:
Journal of Automation Mobile Robotics and Intelligent Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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