Autor: Yavorskiy, D. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Response of Indium Antimonide at Sub-Terahertz and Terahertz Frequencies
Autorzy:: Yavorskiy, D.
Karpierz, K.
Grynberg, M.
Łusakowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1033781.pdf
Data publikacji:: 2017-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: THz spectroscopy
InSb THz detector
Opis:: Responsivity of a bulk InSb detector at liquid helium temperature was studied in the frequency range 0.1 THz
Źródło:: Acta Physica Polonica A; 2017, 132, 2; 338-339
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Sub-Terahertz Emission from Field-Effect Transistors
Autorzy:: Yavorskiy, D.
Karpierz, K.
Kopyt, P.
Grynberg, M.
Łusakowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1033125.pdf
Data publikacji:: 2017-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: Field-effect transistors
THz emission
Opis:: Several commercially available field-effect GaInAs-based transistors were studied as emitters of electromagnetic radiation. The emitters were tested either at room or at liquid helium temperature. To spectrally analyse emitted radiation, we applied three different experimental techniques: a spectrum analyser with antennas and mixers, a Michelson interferometer and a magnetic-field-tunable InSb detector. We show that the emission consists of a fundamental frequency of 11.5 GHz and its multiple harmonics spanning the emission band up to about 400 GHz. Analysis of the results allows us to suggest that the emission is caused by a Gunn effect and a high harmonics content is related to a pulse-like time dependence of the current.
Źródło:: Acta Physica Polonica A; 2017, 132, 2; 335-337
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Mobility of Holes in Nanometer Ge-on-Si p-Type Metal-Oxide-Semiconductor Field-Effect Transistors at Low Temperatures
Autorzy:: Grigelionis, I.
Fobelets, K.
Vincent, B.
Mitard, J.
De Jaeger, B.
Simoen, E.
Hoffman, T.
Yavorskiy, D.
Łusakowski, J.
Powiązania:: https://bibliotekanauki.pl/articles/1492960.pdf
Data publikacji:: 2011-11
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 72.20.My
85.30.Tv
Opis:: We investigated magnetoresistance of p-type Ge-on-Si metal-oxide-semiconductor field-effect transistors in order to determine the hole mobility μ as a function of the gate polarization $(V_{G})$. Measurements were carried out at 4.2 K and magnetic fields up to 10 T. The signal measured was proportional to the derivative of the transistor resistance with respect to $V_{G}$. To determine the hole mobility we developed a method to treat the measured signal which is based on a numerical solution of a differential equation resulting from the theoretical description of the experimental procedure. As a result, we obtained a non-monotonic $μ(V_{G})$ dependence which is a characteristic feature of the carrier transport in gated two-dimensional structures.
Źródło:: Acta Physica Polonica A; 2011, 120, 5; 933-935
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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