Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Yao, K." wg kryterium: Autor

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-6 z 6
    Tytuł:
    Critical Current Density and Microstructure of $NdBa_2Cu_3O_7$ Single Crystal
    Autorzy:
    Diko, P.
    Zmorayová, K.
    Šefčiková, M.
    Antal, V.
    Kováč, J.
    Yao, X.
    Powiązania:
    https://bibliotekanauki.pl/articles/1535339.pdf
    Data publikacji:
    2010-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    74.25.Ha
    74.25.Sv
    74.62.Bf
    Opis:
    The top-seeded solution growth method was used to grow NdBCOss single crystals in air. The microstructure of the samples has shown that the oxygenation crack structure developed in the single crystals. The intrinsic critical current density was estimated to be at least twice higher than the value of volume critical current density determined from the magnetization measurements.
    Źródło:
    Acta Physica Polonica A; 2010, 118, 5; 1028-1030
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Interface Engineering in Heteroepitaxy
    Autorzy:
    Hong, S. K.
    Chen, Y.
    Ko, H. J.
    Yao, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2035571.pdf
    Data publikacji:
    2002
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    68.35.-p
    68.35.Dv
    81.15.-z
    81.15.Hi
    81.10.Aj
    Opis:
    We report the importance of interface engineering in heteroepitaxy with examples of plasma-assisted molecular beam epitaxial ZnO growths on (0001) sapphire substrates and on (0001) GaN/sapphire templates, whose interfaces are engineered to improve and to control properties of ZnO films. The growth of rocksalt structure MgO buffer on Al$\text{}_{2}$O$\text{}_{3}$ (0001) is developed for ZnO epitaxy. By employing the MgO buffer layer, the formation of 30$\text{}^{o}$ rotated mixed domains is prohibited and two-dimensional layer-by-layer growth of ZnO on sapphire substrate is achieved. High-resolution X-ray diffraction reveals the superior improvement in a crystal quality of ZnO films with an MgO buffer. Polarity of wurtzite structure ZnO films on Ga-polar GaN/sapphire templates is controlled by changing interface structures. By forming a single crystalline, monoclinic Ga$\text{}_{2}$O$\text{}_{3}$ interfacial layer between GaN and ZnO through O-plasma pre-exposure on the Ga-polar GaN surface, O-polar ZnO films are grown. By forming the ZnO/GaN heterointerface without an interfacial layer through the Zn pre-exposure on the Ga-polar GaN surface, Zn-polar ZnO films are grown.
    Źródło:
    Acta Physica Polonica A; 2002, 102, 4-5; 541-554
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Detection of Shallow Dislocations on 4H-SiC Substrate by Etching Method
    Autorzy:
    Ishikawa, Y.
    Yao, Y.
    Sato, K.
    Sugawara, Y.
    Danno, K.
    Suzuki, H.
    Bessho, T.
    Kawai, Y.
    Shibata, N.
    Powiązania:
    https://bibliotekanauki.pl/articles/1492539.pdf
    Data publikacji:
    2011-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.uj
    81.65.Cf
    68.37.Lp
    Opis:
    Correlation between dislocation types in epitaxial 4H-SiC and etch pit types on the 4H-SiC wafer surface were investigated by etch pit method and transmission electron microscope. Shallow dislocation on the wafer was found to form round pit without core. The shallow dislocation was estimated half-loop type in wafer and this estimation explains that step-flow growth converts half-loop dislocation into complex dislocation composed by threading dislocation and basal plane dislocation.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 6A; A-025-A-027
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Different Ignition Responses of Powdery and Bulky 1,3,5-Triamino-2,4,6-trinitrobenzene (TATB) Based Polymer-bonded Explosives under Ultra-high Voltage Electrostatic Discharge
    Autorzy:
    Lyu, Z.
    Long, X.
    Li, Z.
    Dai, X.
    Deng, C.
    He, S.
    Li, M.
    Yao, K.
    Wen, Y.
    Powiązania:
    https://bibliotekanauki.pl/articles/358240.pdf
    Data publikacji:
    2018
    Wydawca:
    Sieć Badawcza Łukasiewicz - Instytut Przemysłu Organicznego
    Tematy:
    electrostatic spark sensitivity
    ultra-high voltage electrostatic discharge
    thermal effect
    electric field effect
    Opis:
    The electric spark induced ignition mechanism for explosives needs further study. The ignition of powdery and bulky TATB by electrostatic discharge (ESD) was investigated. Up to 200 kV ultra-high voltage ESD was applied to powdery and bulky explosives of two TATB-based polymer-bonded explosives (named PBX-1 and PBX-2). The results showed that the spark sensitivities of powdery and bulky explosives are extremely different for the same formulation. The 50% ignition voltages of powdery PBX-1 and PBX-2 were 10.8 kV and 8.5 kV, respectively, while the values for the bulky samples (tablets) were not less than 200 kV. Both heat and the electric field can be transmitted into the powdery samples, on the other hand only the electric field can be transmitted into the bulk samples. The electric field has a smaller contribution while the heat has a larger contribution to the ignition during an ESD, i.e., the thermal effect plays a main role in the ignition process. Our experimental results are in good agreement with recent results calculated by density functional theory.
    Źródło:
    Central European Journal of Energetic Materials; 2018, 15, 2; 283-298
    1733-7178
    Pojawia się w:
    Central European Journal of Energetic Materials
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Low atmospheric density measurement based on Rayleigh scattering of an ultraviolet laser
    Autorzy:
    Wang, R
    Yao, J.
    Zhong, K.
    Miao, Y.
    Cui, H.
    Zhao, X.
    Zhang, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/174910.pdf
    Data publikacji:
    2013
    Wydawca:
    Politechnika Wrocławska. Oficyna Wydawnicza Politechniki Wrocławskiej
    Tematy:
    atmospheric density measurement
    Rayleigh scattering
    ultraviolet laser
    Opis:
    The qualitative measurement of low atmospheric density in the air flow field has been investigated in this paper. The supersonic flow field with Mach number of 1.5 around the NACA0006 aerofoil has been numerically simulated and the transient slight pressure and low density atmosphere have been experimentally determined based on Rayleigh scattering of a 266 nm ultraviolet laser. The scattering patterns have been effectively captured under different atmospheric pressure of 4.5, 92, 470 and 710 Pa with laser energy of only 0.5 mJ. It has been demonstrated that in the pressure range from 4.5 to 1100 Pa, corresponding to the atmospheric density from 4.8105×10–5 kg/m3 to 1.279×10–2 kg/m3, the scattering intensity of an ultraviolet laser is linear to the pressure and density with the slope coefficient of 0.00968 a.u./Pa and 0.83226 a.u./(kg/m3×10–3). It has been proved that Rayleigh scattering is a promising technology for observation of instantaneous and multidimensional distribution of a supersonic flow field.
    Źródło:
    Optica Applicata; 2013, 43, 3; 597-605
    0078-5466
    1899-7015
    Pojawia się w:
    Optica Applicata
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Isolation of biosynthesis related transcripts of 2,3,5,4-tetrahydroxy stilbene-2-O-beta-D-glucoside from Fallopia multiflora by suppression subtractive hybridization
    Autorzy:
    Zhao, W.
    Sheng, S.
    Liu, Z.
    Lu, Di.
    Zhu, K.
    Li, X.
    Zhao, S.
    Yao, Y.
    Powiązania:
    https://bibliotekanauki.pl/articles/58239.pdf
    Data publikacji:
    2014
    Wydawca:
    Polskie Towarzystwo Botaniczne
    Tematy:
    isolation
    biosynthesis
    transcriptome
    2,3,5,4'-tetrahydroxy stilbene-2-O-beta-D-glucoside
    Fallopia multiflora
    hybridization
    gene expression
    medicinal plant
    Chinese herb
    Opis:
    2,3,5,4'-tetrahydroxy stilbene-2-O-ß-D-glucoside (THSG) exerts multiple pharmacodynamic actions, found in Fallopia multiflora, but the biosynthesis pathway of THSG is still unclear. To clear this ambiguity, we constructed suppression subtractive hybridization (SSH) libraries to screen the genes involved in THSG biosynthesis from two F. multiflora varieties, which vary significantly in THSG content. Twelve non-redundant differentially expressed sequence tags were obtained and the full lengths of 4 unreported fragments were amplified by rapid amplification of cDNA ends. We totally got 7 fulllength transcripts, and all of them were aligned to the transcriptome and digital gene expression tag profiling database of four F. multiflora tissues (root, stem and leaf from Deqing F. multiflora and another root from Chongqing F. multiflora; data unpublished) using local BLAST. The results showed that there was a significant, organ specific difference in the expression of fragments and full-length sequences. All the sequences were annotated by aligning to nucleotide and protein databases. Kyoto Encyclopedia of Genes and Genomes pathway analysis indicated that THSG biosynthesis was correlated with multiple life activities.
    Źródło:
    Acta Societatis Botanicorum Poloniae; 2014, 83, 2
    0001-6977
    2083-9480
    Pojawia się w:
    Acta Societatis Botanicorum Poloniae
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies