Autor: Wolkenberg, A. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Comparative study of sensor and material properties on In₀.₅₃Ga₀.₄₇As/InP fabricated by MBE and MOCVD
Autorzy:: Wolkenberg, A.
Przesławski, T.
Powiązania:: https://bibliotekanauki.pl/articles/378441.pdf
Data publikacji:: 2006
Wydawca:: Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
Tematy:: sensor
magnetic properties
Opis:: We report the galvanomagnetic properties of Hall and magnetoresistor cross-shaped sensors with lateral dimensions 2x3 mm. The comparative study of epilayers fabricated by MBE and MOCVD are presented. The measured parameters of these devices gave an interesting insight into their behaviour at temperatures ranging from LHe to room temperature. The large changes of the galvanomagnetic parameters vs. magnetic field and temperature allow these devices to be used as field or temperature sensors.
Źródło:: Electron Technology : Internet Journal; 2005-2006, 37/38, 1; 1-9
1897-2381
Pojawia się w:: Electron Technology : Internet Journal
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 2.

Tytuł:: The dependence of magnetic properties on crystallographic structure of electrochemically deposited Ni/Cu superlattices
Autorzy:: Tokarz, A.
Nitkiewicz, Z.
Wolkenberg, A.
Powiązania:: https://bibliotekanauki.pl/articles/378391.pdf
Data publikacji:: 2003
Wydawca:: Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
Opis:: Ni/Cu superlattices have been grown by electrodeposition from a single sulfamate bath (based on Ni(SO₃NH₂)₂ and CuSO₄) by using the potentiostatic method. Chemical composition of single layers was investigated with SIMS. The Cu layers were almost pure (99.85% Cu) while Ni layers contained 2 ÷ 5% Cu. The lambda period (L) and crystallographic structure of the superlattices were established by X-ray investigations. Good quality of the Ni-Cu interface was indicated, by the presence of second-order satellite peaks around the main multilayer peak. The changes of crystallographic orientation as a function of the total thickness of the deposit demonstrate also the influence of the preferential crystallographic orientation of the multilayers on the size and nature of the magnetoresistance effect. The giant magnetoresistance effect (GMR) was dominant in samples with strong (111) texture and the anisotropy magnetoresistance (AMR) effect was observed in sampIes without any preferential crystallographic orientation.
Źródło:: Electron Technology : Internet Journal; 2003, 35, 5; 1-4
1897-2381
Pojawia się w:: Electron Technology : Internet Journal
Dostawca treści:: Biblioteka Nauki

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Skocz do pozycji: 3.

Tytuł:: Temperature dependence of galvanomagnetic properties of undoped n-type GaA/GaAs and n-type InGaAs/InP layers
Autorzy:: Wolkenberg, A.
Przesławski, T.
Regiński, K.
Kaniewski, J.
Powiązania:: https://bibliotekanauki.pl/articles/378421.pdf
Data publikacji:: 2002
Wydawca:: Sieć Badawcza Łukasiewicz - Instytut Technologii Elektronowej
Opis:: The magnetoresistance (MR) and the Hall-effect measurements in undoped n-type GaAs/GaAs and n-type In₀.₅₃Ga₀.₄₇As/InP samples in the temperature range 3.5 ÷ 300 K were carried out. We have obtained magnetoresistance data on the samples of n-type epilayers on SI GaAs and SI InP substrates made MBE technology. Magnetoresistance by measurements in constant magnetic fields vs. temperature are completed. The measurements reveal that the magnetoresisance of the samples strongly depends on the temperature and magnetic field.
Źródło:: Electron Technology : Internet Journal; 2001-2002, 34, 1; 1-4
1897-2381
Pojawia się w:: Electron Technology : Internet Journal
Dostawca treści:: Biblioteka Nauki

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