- Tytuł:
- Barrier Structures on the Basis of Graded-Band-Gap CdHgTe Obtained by Evaporation-Condensation-Diffusion Method
- Autorzy:
-
Świątek, Z.
Vlasov, A. P.
Ivashko, M. V.
Petryna, R. L.
Bonchyk, A. Yu.
Sokolovskii, B. S. - Powiązania:
- https://bibliotekanauki.pl/articles/958223.pdf
- Data publikacji:
- 2016
- Wydawca:
- Polska Akademia Nauk. Czytelnia Czasopism PAN
- Tematy:
-
obtaining photovoltaic structures
barrier structures
evaporation-condensation-diffusion method - Opis:
- The paper presents the methods of obtaining photovoltaic structures based on CdXHg1-XTe graded-band-gap epitaxial layers. Barriers in these structures were formed by solid phase doping of the material with low-diffusing impurities (As). High-temperature diffusion of acceptor impurity (As) in intrinsically defective material of n-type conductivity as well as ion introducing the donor impurity (B) in uniformly doped during the epitaxy process material of p-type of conductivity have been used. The possibility of creating multi-element graded-band-gap photovoltaic structures suitable for broad band detection of infrared radiation as a result of epitaxial growth by evaporation-condensation-diffusion method has been demonstrated.
- Źródło:
-
Archives of Metallurgy and Materials; 2016, 61, 1; 115-122
1733-3490 - Pojawia się w:
- Archives of Metallurgy and Materials
- Dostawca treści:
- Biblioteka Nauki
Artykuł