Autor: Turzyński, Marek - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Resonant DC link inverters for AC motor drive systems – critical evaluation
Autorzy:: Turzyński, Marek
Chrzan, P. J.
Powiązania:: https://bibliotekanauki.pl/articles/200688.pdf
Data publikacji:: 2019
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: soft-switching
resonant DC link inverter
quasiresonant DC link inverter
common-mode voltage
voltage gradient
zero voltage switching
przekształtnik quasirezonansowy DC
gradient napięcia
przekształtnik rezonansowy DC/DC
Opis:: In this survey paper, resonant and quasiresonant DC link inverters are reexamined for AC motor drive applications. Critical evaluation of representative topologies is based on simulation and waveform analysis to characterize current/voltage stress of components, control timing constraints and feasibility. A special concern over inverter common-mode voltage and voltage gradient du/dt limitation capacity is discussed for motor bearing and winding insulation safety. Experimental records of the laboratory developed parallel quasiresonant DC link inverter feeding induction motor confirm results of analysis. Comparative tables and simulation results demonstrate characteristic features of various schemes.
Źródło:: Bulletin of the Polish Academy of Sciences. Technical Sciences; 2019, 67, 2; 241-252
0239-7528
Pojawia się w:: Bulletin of the Polish Academy of Sciences. Technical Sciences
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: The Behavioural Model of Graphene Field-effect Transistor
Autorzy:: Łuszczek, Maciej
Turzyński, Marek
Świsulski, Dariusz
Powiązania:: https://bibliotekanauki.pl/articles/1844478.pdf
Data publikacji:: 2020
Wydawca:: Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:: graphene field effect transistor
behavioural models
circuit simulation
sensors
Opis:: The behavioural model of a graphene field-effect transistor (GFET) is proposed. In this approach the GFET element is treated as a “black box” with only external terminals available and without considering the physical phenomena directly. The presented circuit model was constructed to reflect steady-state characteristics taking also into account GFET capacitances. The authors’ model is defined by a relatively small number of equations which are not nested and all the parameters can be easily extracted. It was demonstrated that the proposed model allows to simulate the steady-state characteristics with the accuracy approximately as high as in the case of the physical model. The presented compact GFET model can be used for circuit or system-level simulations in the future.
Źródło:: International Journal of Electronics and Telecommunications; 2020, 66, 4; 753-758
2300-1933
Pojawia się w:: International Journal of Electronics and Telecommunications
Dostawca treści:: Biblioteka Nauki

Artykuł

Informacja