- Tytuł:
- Elastic-plastic transition in MBE-grown GaSb semiconducting crystal examined by nanoindentation
- Autorzy:
-
Majtyka, A.
Trębala, M.
Tukiainen, A.
Chrobak, D.
Borgieł, W.
Räisänen, J.
Nowak, R. - Powiązania:
- https://bibliotekanauki.pl/articles/1075863.pdf
- Data publikacji:
- 2016-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
81.40.Jj
62.20.F-
81.15.Hi
81.05.Ea - Opis:
- The present paper concerns the elastic-plastic nanodeformation of Te-doped GaSb crystals grown by molecular beam epitaxy on the n-type of GaSb substrate. The conventional analysis of nanoindentation data obtained with sharp triangular (Berkovich) and spherical tip revealed the elastic modulus (E=83.07± 1.78 GPa), hardness (H=5.19±0.25 GPa) and "true hardness" (H_{T}=5.73±0.04 GPa). The registered pop-in event which indicates the elastic-plastic transition in GaSb crystal points towards the corresponding yield strength (σ_{Y}=3.8±0.1 GPa). The origin of incipient plasticity in GaSb crystal is discussed in terms of elastic-plastic deformation energy concept.
- Źródło:
-
Acta Physica Polonica A; 2016, 130, 4; 1131-1133
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł