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    Wyświetlanie 1-4 z 4
    Tytuł:
    Ion Beam Induced Darkening in Tetrahedral Amorphous Carbon Thin Films
    Autorzy:
    Sandulov, M.
    Berova, M.
    Tsvetkova, T.
    Zuk, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1402243.pdf
    Data publikacji:
    2015-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    81.05.U-
    68.55.Ln
    42.70.Ln
    Opis:
    The samples of thin film (d ≈ 40 nm) tetrahedral amorphous carbon (ta-C), deposited by the filtered cathodic vacuum arc have been implanted with N⁺ at a fluence of 3×10¹⁴ cm¯² and ion energy E=20 keV. The induced structural modification of the implanted material results in a considerable change of its optical properties, best manifested by a significant shift of the optical absorption edge to lower photon energies as obtained from optical transmission measurements. This shift is accompanied by a considerable increase of the absorption coefficient (photodarkening effect) in the measured wavelength range (350÷2500 nm). These effects could be attributed to both the additional defect introduction and the increased graphitization, as confirmed by the X-ray photoelectron spectroscopy measurements. The optical contrast thus obtained (between implanted and unimplanted film materials) could be made use of in the area of high-density optical data storage using the focused ion beams.
    Źródło:
    Acta Physica Polonica A; 2015, 128, 5; 953-956
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Implantation Temperature Effects on the Nanoscale Optical Pattern Fabrication in a-SiC:H Films by $Ga^{+}$ Focused Ion Beams
    Autorzy:
    Tsvetkova, T.
    Wright, C.
    Hosseini, P.
    Bischoff, L.
    Zuk, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1400488.pdf
    Data publikacji:
    2013-05
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    85.40.Hp
    81.16.Rf
    68.55.Ln
    Opis:
    This work is related to a novel approach of providing some new generation ultrastable (> 50 years), ultrahigh density (> 1 Tbit/sq.in.) data storage for archival applications. We used ion-implantation to write nanoscale data into hydrogenated amorphous silicon carbide (a-SiC:H) films. Wide bandgap a-SiC:H samples, $Ga^{+}$ focused ion beam implanted, have been prepared. A range of samples has been focused ion beam patterned under different implantation conditions, with emphasis on different substrate temperatures (typically from 0C temperature to around room temperature). Some of the room temperature implanted samples were further annealed at + 250C in vacuum. The focused ion beam patterned samples were then analysed using near-field techniques, like atomic force microscopy, to define optimum implantation conditions and the resulting consequences for archival data storage applications. The atomic force microscopy analysis of $Ga^{+}$ focused ion beam implanted $a-Si_{1-x}C_{x}:H$ samples at room temperature and at 0C revealed an increase of both the depth and the width of the individual lines within the focused ion beam written patterns at the lower temperature, as a result of an increased ion beam induced sputtering yield, in good agreement with the previous results for the case of $Ga^+$ broad beam implantation in $a-Si_{1-x}C_{x}:H$ and again suggesting that the best conditions for optical data storage for archival storage applications would be using $Ga^+$ ion implantation in a-SiC:H films with an optimal dose at room temperatures. Similarly, the atomic force microscopy results confirm that no advantage is expected to result from post-implantation annealing treatments.
    Źródło:
    Acta Physica Polonica A; 2013, 123, 5; 952-955
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ion Beam Induced Surface Modification of ta-C Thin Films
    Autorzy:
    Berova, M.
    Sandulov, M.
    Tsvetkova, T.
    Kitova, S.
    Bischoff, L.
    Boettger, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033772.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    carbon
    ion implantation
    atomic force microscopy
    Opis:
    Thin film samples (d ≈40 nm) of tetrahedral amorphous carbon (ta-C), deposited by filtered cathodic vacuum arc, were implanted with Ga⁺ at ion energy E =20 keV and ion fluences D=3×10¹⁴-3×10¹⁵ cm¯² and N⁺ with the same energy and ion fluence D=3×10¹⁴ cm¯². The Ga⁺ ion beam induced surface structural modification of the implanted material, displayed by formation of new phase at non-equilibrium condition, which could be accompanied by considerable changes in the optical properties of the ta-C films. The N⁺ implantation also results in modification of the surface structure. The induced structural modification of the implanted material results in a considerable change of its topography and optical properties. Nanoscale topography and structural properties characterisation of the Ga⁺ and N⁺ implanted films were performed using atomic spectroscopy analysis. The observed considerable surface structural properties modification in the case of the higher fluence Ga⁺ implanted samples results from the relatively high concentration of introduced Ga⁺ atoms, which is of the order of those for the host element.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 299-301
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optical Pattern Fabrication in Amorphous Silicon Carbide with High-Energy Focused Ion Beams
    Autorzy:
    Tsvetkova, T.
    Takahashi, S.
    Sellin, P.
    Gomez-Morilla, I.
    Angelov, O.
    Dimova-Malinovska, D.
    Zuk, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1503892.pdf
    Data publikacji:
    2011-07
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    41.75.Ak
    42.70.Ln
    68.37.Uv
    73.61.Jc
    Opis:
    Topographic and optical patterns have been fabricated in a-SiC films with a focused high-energy (1 MeV) $H^{+}$ and $He^{+}$ ion beam and examined with near-field techniques. The patterns have been characterized with atomic force microscopy and scanning near-field optical microscopy to reveal local topography and optical absorption changes as a result of the focused high-energy ion beam induced modification. Apart of a considerable thickness change (thinning tendency), which has been observed in the ion-irradiated areas, the near-field measurements confirm increases of optical absorption in these areas. Although the size of the fabricated optical patterns is in the micron-scale, the present development of the technique allows in principle writing optical patterns up to the nanoscale (several tens of nanometers). The observed values of the optical contrast modulation are sufficient to justify the efficiency of the method for optical data recording using high-energy focused ion beams.
    Źródło:
    Acta Physica Polonica A; 2011, 120, 1; 56-59
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-4 z 4

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