- Tytuł:
- Deep-Level Defects in MBE-Grown GaN-Based Laser Structure
- Autorzy:
-
Tsarova, T.
Wosiński, T.
Mąkosa, A.
Skierbiszewski, C.
Grzegory, I.
Perlin, P. - Powiązania:
- https://bibliotekanauki.pl/articles/2047691.pdf
- Data publikacji:
- 2007-08
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.55.Eq
73.20.Hb
61.72.Lk
81.15.Hi - Opis:
- We present results of deep-level transient spectroscopy investigations of defects in a GaN-based heterostructure of a blue-violet laser diode, grown by plasma-assisted molecular beam epitaxy on a bulk GaN substrate. Three majority-carrier traps, T1 at E$\text{}_{C}$ - 0.28 eV, T2 at E$\text{}_{C}$ - 0.60 eV, and T3 at E$\text{}_{V}$ + 0.33 eV, were revealed in deep-level transient spectra measured under reverse-bias conditions. On the other hand, deep-level transient spectroscopy measurements performed under injection conditions, revealed one minority-carrier trap, T4, with the activation energy of 0.20 eV. The three majority-carrier traps were revealed in the spectra measured under different reverse-bias conditions, suggesting that they are present in various parts of the laser-diode heterostructure. In addition, these traps represent different charge-carrier capture behaviours. The T1 trap, which exhibits logarithmic capture kinetics, is tentatively attributed to electron states of dislocations in the n-type wave-guiding layer of the structure. In contrast, the T2, T3, and T4 traps display exponential capture kinetics and are assigned to point defects.
- Źródło:
-
Acta Physica Polonica A; 2007, 112, 2; 331-337
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł