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Wyszukujesz frazę "Tsai, S. S." wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł:
Mitigation of voltage flicker by superconducting synchronous Condenser (SUPERVAR)
Autorzy:
Tsai, S. S.
Liu, Y.
Ingram, M. R.
Powiązania:
https://bibliotekanauki.pl/articles/262647.pdf
Data publikacji:
2005
Wydawca:
Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie
Tematy:
superconductivity
synchronous condenser
voltage flicker
power quality
Opis:
Voltage flicker caused by the electric arc furnace (EAF) and the mitigation using the superconducting synchronous condenser (SuperVAR) by the American Superconductor Corp. are considered in this paper. The modeling of EAF, SuperVAR and the system used are discussed. Fast reactive power support to reduce voltage flicker problem by an EAF is desirable. The voltage fluctuation amplitude is used as an index to evaluate the effectiveness of SuperVAR for two different MVar levels. At the PCC (point of common coupling) bus, the application of the SuperVAR can improve the voltage flicker by 6% and 19% by applying DC1A type and AC4A type exciter to the SuperVAR. With an DC1A type exciter, the SuperVAR can output only between +1 and -2 MVAR and with an AC4A type exciter the SuperVAR can provide its full rated power (8MVAR) to the system, making the voltage flicker a less severe.
Źródło:
Electrical Power Quality and Utilisation. Journal; 2005, 11, 1; 39-44
1896-4672
Pojawia się w:
Electrical Power Quality and Utilisation. Journal
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Improved Light Extraction Efficiency by Photonic Crystal Arrays on Transparent Contact Layer Using Focused Ion Beams
Autorzy:
Wu, G.
Tsai, B.
Kung, S.
Wu, C.
Powiązania:
https://bibliotekanauki.pl/articles/1504060.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.16.Rf
42.70.Qs
41.75.Ak
Opis:
Nitride-based thin-film materials have become increasingly important for the high brightness light-emitting diode applications. The improvements in light extraction and lower power consumption are highly desired. Although the internal quantum efficiency of GaN-based LED has been relatively high, only a small fraction of light can be extracted. In this study, a new design of two-dimensional photonic crystal array has been prepared on the top transparent contact layer of indium-tin oxide film to improve the light extraction efficiency using focused ion beam. The acceleration voltage of the Ga dual-beam nanotechnology system SMI 3050 was 30 kV and the ion beam current was 100 pA. The cylindrical air holes had the diameter of 150 nm and depth of 100 nm. The micro photoluminescence analysis results showed that the light output intensity could be 1.5 times of that of the non-patterned control sample. In addition, the structural damage from the focused ion beam drilling of GaN step could be eliminated. The excellent I-V characteristics have been maintained, and the external light extraction efficiency would be still improved for the LED devices.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 140-143
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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