- Tytuł:
- Effect of Doping on Ga$\text{}_{1-x}$Al$\text{}_{x}$As Structural Properties
- Autorzy:
-
Bąk-Misiuk, J.
Domagała, J.
Paszkowicz, W.
Trela, J.
Żytkiewicz, Z. R.
Leszczyński, M.
Regiński, K.
Muszalski, J.
Härtwig, J.
Ohler, M. - Powiązania:
- https://bibliotekanauki.pl/articles/1964092.pdf
- Data publikacji:
- 1997-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
81.05.Ea
81.40.-z
68.55.Ln
61.10.Nz - Opis:
- The microstructure of Ga$\text{}_{1-x}$Al$\text{}_{x}$As layers was studied using methods of high resolution diffractometry and topography. Mapping out the reciprocal space in the vicinity of 004 reciprocal lattice points shows a difference in diffuse scattering between doped and undoped layers. This result is attributed to a difference in a point-defect density. From the measurements of lattice parameters at different temperature it was found that the thermal expansion coefficients for the doped layers are higher than for the undoped ones. This phenomenon is attributed to the change of the anharmonic part of lattice vibrations by free electrons or/and point defects.
- Źródło:
-
Acta Physica Polonica A; 1997, 91, 5; 911-915
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł