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Wyszukujesz frazę "Teisseyre, M." wg kryterium: Autor

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    Wyświetlanie 1-8 z 8
    Tytuł:
    The first case of Enterocytozoon bieneusi infection in Poland
    Autorzy:
    Bednarska, M.
    Bajer, A.
    Welc-Faleciak, R.
    Czubkowski, P.
    Teisseyre, M.
    Graczyk, T.K.
    Jankowska, I.
    Powiązania:
    https://bibliotekanauki.pl/articles/49866.pdf
    Data publikacji:
    2013
    Wydawca:
    Instytut Medycyny Wsi
    Tematy:
    Enterocytozoon bieneusi
    infection
    Polska
    microsporidia
    parasite
    human infection
    intracellular parasite
    Opis:
    Microsporidia are intracellular parasites that cause opportunistic infections in humans of various immunological status. Only a few case reports exist on microsporidial infection in solid organ transplant recipients worldwide. The presented study demonstrates the first case in Poland of Enterocytozoon bieneusi infection in a liver transplant patient. Parasites were diagnosed in stool samples using both modified trichrome staining and PCR.
    Źródło:
    Annals of Agricultural and Environmental Medicine; 2013, 20, 2
    1232-1966
    Pojawia się w:
    Annals of Agricultural and Environmental Medicine
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetometria jako narzędzie do oceny zanieczyszczeń środowiska
    Magnetometry as a tool to evaluate the environmental pollution
    Autorzy:
    Gorka-Kostrubiec, B.
    Krol, E.
    Teisseyre-Jelenska, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/2084284.pdf
    Data publikacji:
    2013
    Wydawca:
    Uniwersytet Warszawski. Wydział Geografii i Studiów Regionalnych
    Tematy:
    srodowisko
    zanieczyszczenia srodowiska
    ocena zanieczyszczen
    narzedzia
    magnetometria terenowa
    podatnosc magnetyczna
    Warszawa
    powietrze atmosferyczne
    gleby
    Opis:
    This paper presents the use of magnetometry to study pollution of soil and air. The magnetic method consists in determining the magnetic properties of pollution floating in the air and deposited in the soil, the leaves of trees or household dust in apartments. The method based on the fact that the magnetic particles present in the pollution are associated with heavy metals and toxic trace elements harmful to human health. The study of traffic pollution was focused on the spatial distribution of pollution in soils along roads in relation to the distance from the edge of road, the area topography and the factors affecting the speed of motor transport (traffic lights, traffic jams, road narrowing, etc.). The study of air pollution allowed to determine the seasonal correlation between pollution deposited on filters and meteorological parameters such as temperature, humidity and precipitation. Detailed analysis of magnetic susceptibility as an indicator of pollution revealed increasing trend with temperature and absolute humidity in the cold months of the year and the decreasing trend in the warm months. Similar correlations were not observed between the magnetic susceptibility and the precipitation. The second part presents a study of indoor air pollution based on measurements of dust collected in apartments in different districts of Warsaw. It was found that floor on which dust was taken did not affect the amount and composition of pollution in opposite to vehicle traffic, housing density and way of ventilation. Study shows that the most polluted apartments are in the Center, in the district of Praga Południe, Mokotów and Ursynów located close to the narrow streets with the large vehicle traffic and poor ventilation. Correlation of the magnetic susceptibility with the concentration of heavy metals in household dust is the base for use of susceptibility for monitoring indoor air pollution.
    Źródło:
    Prace i Studia Geograficzne; 2013, 51; 17-28
    0208-4589
    Pojawia się w:
    Prace i Studia Geograficzne
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    High Pressure Freeze-out of Electrons in Undoped GaN Crystal. Proof of Existence of Resonant Donor State (Nitrogen Vacancy)
    Autorzy:
    Perlin, P.
    Teisseyre, H.
    Suski, T.
    Leszczyński, M.
    Grzegory, I.
    Jun, J.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1931916.pdf
    Data publikacji:
    1995-01
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.-i
    71.55.Eq
    Opis:
    We investigated free carriers related optical absorption in GaN in hydrostatic pressures up to 30 GPa. The disappearance of this absorption at pressures close to 18 GPa was explained by trapping electrons resulting from the shift of nitrogen vacancy related donor level into the GaN energy gap at high pressure. We estimated the energetic position of this level at atmospheric pressure to be about 0.8 eV above the conduction band minimum.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 1; 141-143
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Thermal Expansion of GaN Bulk Crystals and Homoepitaxial Layers
    Autorzy:
    Leszczyński, M.
    Teisseyre, H.
    Suski, T.
    Grzegory, I.
    Boćkowski, M.
    Jun, J.
    Pałosz, B.
    Porowski, S.
    Pakuła, K.
    Baranowski, J. M.
    Barski, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1952040.pdf
    Data publikacji:
    1996-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Ji
    61.72.Vv
    Opis:
    Thermal expansion of gallium nitride was measured using high resolution X-ray diffraction. The following samples were examined: (i) single monocrystals grown at pressure of about 15 kbar, (ii) homoepitaxial layers. The main factor influencing both, the lattice parameters and the thermal expansion coefficient, are free electrons related to the nitrogen vacancies. The origin of an increase in the lattice constants by free electrons is discussed in terms of the deformation potential of the conduction-band minimum. An increase of the thermal expansion by free electrons is explained by a decrease of elastic constants.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 5; 887-890
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    High Resistivity GaN Single Crystalline Substrates
    Autorzy:
    Porowski, S.
    Boćkowski, M.
    Łucznik, B.
    Grzegory, I.
    Wróblewski, M.
    Teisseyre, H.
    Leszczyński, M.
    Litwin-Staszewska, E.
    Suski, T.
    Trautman, P.
    Pakuła, K.
    Baranowski, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1968415.pdf
    Data publikacji:
    1997-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Eq
    72.80.Ey
    Opis:
    High resistivity 10$\text{}^{4}$-10$\text{}^{6}$ Ω cm (300 K) GaN single crystals were obtained by solution growth under high N$\text{}_{2}$ pressure from melted Ga with 0.1-0.5at.% of Mg. Properties of these crystals are compared with properties of conductive crystals grown by a similar method from pure Ga melt. In particular, it is shown that Mg-doped GaN crystals have better structural quality in terms of FWHM of X-ray rocking curve and low angle boundaries. Temperature dependence of electrical resistivity suggests hopping mechanism of conductivity. It is also shown that strain free GaN homoepitaxial layers can be grown on the Mg-doped GaN substrates.
    Źródło:
    Acta Physica Polonica A; 1997, 92, 5; 958-962
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Epitaxial Layers Versus Bulk Single Crystals of GaN. Temperature Studies of Lattice Parameters and Energy Gap
    Autorzy:
    Teisseyre, H.
    Perlin, P.
    Leszczyński, M.
    Suski, T.
    Dmowski, L.
    Grzegory, I.
    Porowski, S.
    Jun, J.
    Moustakas, T. D.
    Powiązania:
    https://bibliotekanauki.pl/articles/1873040.pdf
    Data publikacji:
    1995-02
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    65.70.+y
    78.50.Ge
    78.66.Fd
    Opis:
    Gallium nitride epitaxial layer grown by molecular beam epitaxy and bulk crystal grown at high pressure were examined by using X-ray diffraction methods, and by optical absorption at a wide temperature range. The free electron concentration was 6 × 10$\text{}^{17}$ cm$\text{}^{-3}$ for the layer and about 5 × 10$\text{}^{19}$ cm$\text{}^{-3}$ for the bulk crystal. The experiments revealed a different position of the absorption edge and its temperature dependence for these two kinds of samples. The structural examinations proved a significantly higher crystallographic quality of the bulk sample. However, the lattice constants of the samples were nearly the same. This indicated that a rather different electron concentration was responsible for the different optical properties via Burstein-Moss effect.
    Źródło:
    Acta Physica Polonica A; 1995, 87, 2; 403-406
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Optically Pumped Laser Action on Nitride Based Separate Confinement Heterostructures Grown along the (11¯20) Crystallographic Direction
    Autorzy:
    Teisseyre, H.
    Szymański, M.
    Khachapuridze, A.
    Skierbiszewski, C.
    Feduniewicz-Żmuda, A.
    Siekacz, M.
    Łucznik, B.
    Kamler, G.
    Kryśko, M.
    Suski, T.
    Perlin, P.
    Grzegory, I.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2047728.pdf
    Data publikacji:
    2007-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    42.55.Px
    78.45.+h
    78.66.Fd
    Opis:
    The intention of this work is to discuss and report on our research on nonpolar laser structures grown on bulk GaN crystal substrates along the (11¯20) nonpolar direction. The main advantages of such nonpolar structures are related to the elimination of the built-in electric fields present in commonly used systems grown along the polar (0001) axis of nitride crystals. We demonstrated the optically pumped laser action on separate confinement heterostructures. Laser action is clearly shown by spontaneous emission saturation, abrupt line narrowing, and strong transversal electric polarization of output light. The lasing threshold was reached at an excitation power density of 260 kW/cm$\text{}^{2}$ for a 700μm long cavity (at room temperature).
    Źródło:
    Acta Physica Polonica A; 2007, 112, 2; 467-472
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Blue Laser on High N$\text{}_{2}$ Pressure-Grown Bulk GaN
    Autorzy:
    Grzegory, I.
    Boćkowski, M.
    Krukowski, S.
    Łucznik, B.
    Wróblewski, M.
    Weyher, J.
    Leszczyński, M.
    Prystawko, P.
    Czernecki, R.
    Lehnert, J.
    Nowak, G.
    Perlin, P.
    Teisseyre, H.
    Purgał, W.
    Krupczyński, W.
    Suski, T.
    Dmowski, L.
    Litwin-Staszewska, E.
    Skierbiszewski, C.
    Łepkowski, S.
    Porowski, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2030423.pdf
    Data publikacji:
    2001-12
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Opis:
    In this note we report briefly on the details of pulsed-current operated "blue" laser diode, constructed in our laboratories, which utilizes bulk GaN substrate. As described in Ref. [1] the substrate GaN crystal was grown by HNPSG method, and the laser structure was deposited on the conducting substrate by MOCVD techniques (for the details see Sec. 2 and Sec. 4 of Ref.~[1], respectively).
    Źródło:
    Acta Physica Polonica A; 2001, 100, Supplement; 229-232
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

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