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Wyświetlanie 1-3 z 3
Tytuł:
Thermoelastic stresses in functionally graded rotating annular disks with variable thickness
Autorzy:
Allam, M. N. M.
Tantawy, R.
Zenkour, A. M.
Powiązania:
https://bibliotekanauki.pl/articles/949321.pdf
Data publikacji:
2018
Wydawca:
Polskie Towarzystwo Mechaniki Teoretycznej i Stosowanej
Tematy:
functionally graded
variable thickness
semi-analytical approach
rotating
thermal effect
Opis:
This article presents semi-analytical solutions for stress distributions in exponentially and functionally graded rotating annular disks with arbitrary thickness variations. The disk is under pressure on its boundary surfaces and exposed to temperature distribution varying linearly across thickness. Material properties are supposed to be graded in the radial direction of the disk and obeying to two different forms of distribution of volume fraction of constituents. Different conditions at boundaries for stresses and displacement are discussed. Accurate and efficient solutions for displacement and stresses in rotating annular disks are determined using infinitesimal theory. Numerical results are carried out and discussed for different cases. It can be deduced that the gradient of material properties and thickness variation as well as the change of temperature sources have a specific effect in modern applications.
Źródło:
Journal of Theoretical and Applied Mechanics; 2018, 56, 4; 1029-1041
1429-2955
Pojawia się w:
Journal of Theoretical and Applied Mechanics
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Elastic and Viscoelastic Stresses of Nonlinear Rotating Functionally Graded Solid and Annular Disks with Gradually Varying Thickness
Autorzy:
Allam, M. N. M.
Tantawy, R.
Yousof, A.
Zenkour, A. M.
Powiązania:
https://bibliotekanauki.pl/articles/139874.pdf
Data publikacji:
2017
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
nonlinear rotation
viscoelasticity
functionally graded materials
successive approximations method
solid and annular disks
gradually varying thickness
rotacja nieliniowa
lepkosprężystość
funkcjonalne materiały gradientowe
metoda kolejnych przybliżeń
dyski pierścieniowe i stałe
stopniowa zmiana grubości
Opis:
Analytical and numerical nonlinear solutions for rotating variable-thickness functionally graded solid and annular disks with viscoelastic orthotropic material properties are presented by using the method of successive approximations.Variable material properties such as Young’s moduli, density and thickness of the disk, are first introduced to obtain the governing equation. As a second step, the method of successive approximations is proposed to get the nonlinear solution of the problem. In the third step, the method of effective moduli is deduced to reduce the problem to the corresponding one of a homogeneous but anisotropic material. The results of viscoelastic stresses and radial displacement are obtained for annular and solid disks of different profiles and graphically illustrated. The calculated results are compared and the effects due to many parameters are discussed.
Źródło:
Archive of Mechanical Engineering; 2017, LXIV, 4; 423-440
0004-0738
Pojawia się w:
Archive of Mechanical Engineering
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A DNA Biosensor Based Interface States of a Metal-Insulator-Semiconductor Diode for Biotechnology Applications
Autorzy:
Al-Ghamdi, A.
Al-Hartomy, O.
Gupta, R.
El-Tantawy, F.
Taskan, E.
Hasar, H.
Yakuphanoglu, F.
Powiązania:
https://bibliotekanauki.pl/articles/1489876.pdf
Data publikacji:
2012-03
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.40.Jn
81.05.Fb
73.30.+y
Opis:
We studied how a DNA sensor based on the interface states of a conventional metal-insulator-semiconductor diode can be prepared for biotechnology applications. For this purpose, the p-type silicon/metal diodes were prepared using $SiO_2$ and DNA layers. The obtained results were analyzed and compared with interfaces of DNA and $SiO_2$. It is seen that the ideality factor (1.82) of the $Al//p-Si//SiO_2//DNA//Ag$ diode is lower than that (3.31) of the $Al//p-Si//SiO_2//Ag$ diode. This indicates that the electronic performance of DNA/Si junction was better than that of $SiO_2//Si$ junction. The interface states of the $Al//p-Si//SiO_2//DNA//Ag$ and $Al//p-Si//SiO_2//Ag$ junctions were analyzed by conductance technique. The obtained D_{it} values indicate that the DNA layer is an effective parameter to control the interface states of the conventional Si based on metal/semiconductor contacts. Results exhibited that DNA based metal-insulator-semiconductor diode could be used as DNA sensor for biotechnology applications.
Źródło:
Acta Physica Polonica A; 2012, 121, 3; 673-677
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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