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    Wyświetlanie 1-9 z 9
    Tytuł:
    A planning model for the chemical integrated system under uncertainty by grey programming approach
    Autorzy:
    Ren, J.
    Tan, S.
    Dong, L.
    Zhou, Z.
    Gao, S.
    Pan, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/778898.pdf
    Data publikacji:
    2013
    Wydawca:
    Zachodniopomorski Uniwersytet Technologiczny w Szczecinie. Wydawnictwo Uczelniane ZUT w Szczecinie
    Tematy:
    planning
    chemical integrated system
    grey programming
    Opis:
    A model to optimize the planning of the chemical integrated system comprised by multi-devices and multi-products has been proposed in this paper. With the objective to make more profits, the traditional model for optimizing production planning has been proposed. The price of chemicals, the market demand, and the production capacity have been considered as mutative variables, then an improved model in which some parameters are not constant has been developed and a new method to solve the grey linear programming has been proposed. In the grey programming model, the value of credibility can be suggested by the decision-makers, and the results of the production planning calculated by the model can help them to achieve their desired target. An actual case has been studied by the proposed methodology, and the proposed methodology can be popularized to other cases.
    Źródło:
    Polish Journal of Chemical Technology; 2013, 15, 2; 16-22
    1509-8117
    1899-4741
    Pojawia się w:
    Polish Journal of Chemical Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    A Review of Surface Deformation and Strain Measurement Using Two-Dimensional Digital Image Correlation
    Autorzy:
    Khoo, S.-W.
    Karuppanan, S.
    Tan, C.-S.
    Powiązania:
    https://bibliotekanauki.pl/articles/221852.pdf
    Data publikacji:
    2016
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    surface deformation
    strain measurement
    two-dimensional digital image correlation
    Opis:
    Among the full-field optical measurement methods, the Digital Image Correlation (DIC) is one of the techniques which has been given particular attention. Technically, the DIC technique refers to a non-contact strain measurement method that mathematically compares the grey intensity changes of the images captured at two different states: before and after deformation. The measurement can be performed by numerically calculating the displacement of speckles which are deposited on the top of object’s surface. In this paper, the Two-Dimensional Digital Image Correlation (2D-DIC) is presented and its fundamental concepts are discussed. Next, the development of the 2D-DIC algorithms in the past 33 years is reviewed systematically. The improvement of 2DDIC algorithms is presented with respect to two distinct aspects: their computation efficiency and measurement accuracy. Furthermore, analysis of the 2D-DIC accuracy is included, followed by a review of the DIC applications for two-dimensional measurements.
    Źródło:
    Metrology and Measurement Systems; 2016, 23, 3; 461-480
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fabrication of polymer microcomponents using CO2 laser melting technique
    Wytwarzanie mikroelementów polimerowych z zastosowaniem techniki topienia laserem CO2
    Autorzy:
    Tan, W. S.
    Zhou, J. Z.
    Huang, S.
    Zhu, W. L.
    Meng, X. K.
    Powiązania:
    https://bibliotekanauki.pl/articles/947347.pdf
    Data publikacji:
    2015
    Wydawca:
    Sieć Badawcza Łukasiewicz - Instytut Chemii Przemysłowej
    Tematy:
    molding
    polymer microcomponents
    CO2 laser
    irradiation
    numerical simulation
    formowanie
    mikroelementy polimerowe
    laser CO2
    napromienianie
    symulacja numeryczna
    Opis:
    A new method of laser melting molding to produce high-efficiency and high-quality polymer microcomponents was proposed. Numerical simulation was used to analyze the temperature changes of polymer melt during the laser irradiation process. An orthogonal experiment was also employed to investigate the factors influencing molding accuracy. The molding experiments were conducted on molds with various degrees of roughness, and the surface quality of the molded pieces was tested. The simulation analysis and experimental results showed that the laser power plays a critical role in improving the repetition accuracy. The next factors are irradiation time and mold temperature, followed by molding force. Optimized technological parameters (1.2 W of laser power, 6 mm of laser beam width, 6 s irradiation time, 150 N molding force, and 80 °C mold temperature) were applied to obtain a molded pieces with high repetition accuracy and a microstructure dimensional deviation of less than 1 µm. Using a mold with lower surface roughness provides that we can obtain a molded piece with lower roughness, the roughness difference between the mold and the molded piece was less than 0.012 µm.
    Zaproponowano nową metodę formowania mikroelementów polimerowych z zastosowaniem topienia laserowego, zapewniającą wysoką wydajność oraz dobrą jakość wytwarzanych mikroelementów. Istotnym parametrem procesu, wpływającym na jakość formowanych elementów, jest temperatura stopu polimeru. Do analizy zmian tej temperatury pod wpływem napromieniania laserem zastosowano symulację numeryczną. Zastosowano także ortogonalny plan eksperymentu w celu zbadania czynników wpływających na dokładność formowania. Formowania przeprowadzono z użyciem form o różnych stopniach chropowatości i zbadano jakość powierzchni mikroelementów. Analiza wyników symulacji i badań eksperymentalnych wykazała, że moc lasera odgrywa kluczową rolę w uzyskaniu powtarzalnej dokładności. Kolejnymi czynnikami są czas napromieniowania i temperatura formy oraz siły formujące. Zoptymalizowane parametry technologiczne (moc lasera 1,2 W, szerokość wiązki lasera 6mm, czas napromieniania 6 s, siła formująca 150 N i temperatura formowania 80 °C) zastosowano do formowania elementów z powtarzalną dużą dokładnością odtwarzania wymiarów (odchylenia wymiarów nie przekraczały 1 µm). Użycie form o mniejszej chropowatości powierzchni pozwalało także uzyskać mniejszą chropowatość mikroelementów, przy czym różnica chropowatości formy i otrzymanego elementu była mniejsza niż 0,012 µm.
    Źródło:
    Polimery; 2015, 60, 3; 192-198
    0032-2725
    Pojawia się w:
    Polimery
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Evaluation of gate drive circuit effect in cascode GaN-based applications
    Autorzy:
    Tan, Q. Y.
    Narayanan, E. M. S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2173545.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    cascode GaNFETs
    parasitics
    buck converter
    gate drive design
    kaskoda GaNFETs
    przetwornica
    pasożytnictwo
    projekt napędu bramy
    Opis:
    This work evaluates the influence of gate drive circuitry to cascode GaN device’s switching waveforms. This is done by comparing three PCBs using three double-pulse-test (DPT) with different gate driving loop design. Among important parasitic elements, source-side inductance shows a significant impact to gate-source voltage waveform. A simulation model based on experimental measurement of the cascode GaNFET used in this work is modified by author. The simulation model is implemented in a synchronous buck converter topology and hereby to assess the impact of gate driving loop of cascode GaN device in both continuous conduction mode (CCM) and critical conduction mode (CRM). Apart from simulation, a synchronous buck converter prototype is presented for experimental evaluation, which shows a 99.15% efficiency at 5A under soft-switching operation (CRM) with a 59ns dead-time.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2021, 69, 2; art. no. e136742
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Evaluation of gate drive circuit effect in cascode GaN-based applications
    Autorzy:
    Tan, Q. Y.
    Narayanan, E. M. S.
    Powiązania:
    https://bibliotekanauki.pl/articles/2128152.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    cascode GaNFETs
    parasitics
    buck converter
    gate drive design
    kaskoda GaNFETs
    przetwornica
    pasożytnictwo
    projekt napędu bramy
    Opis:
    This work evaluates the influence of gate drive circuitry to cascode GaN device’s switching waveforms. This is done by comparing three PCBs using three double-pulse-test (DPT) with different gate driving loop design. Among important parasitic elements, source-side inductance shows a significant impact to gate-source voltage waveform. A simulation model based on experimental measurement of the cascode GaNFET used in this work is modified by author. The simulation model is implemented in a synchronous buck converter topology and hereby to assess the impact of gate driving loop of cascode GaN device in both continuous conduction mode (CCM) and critical conduction mode (CRM). Apart from simulation, a synchronous buck converter prototype is presented for experimental evaluation, which shows a 99.15% efficiency at 5A under soft-switching operation (CRM) with a 59ns dead-time.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2021, 69, 2; e136742, 1--7
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    D(3He,p)4He and D(d,p)3H fusion in a small plasma focus operated in a deuterium helium-3 gas mixture
    Autorzy:
    Springham, S.
    Sim, T.
    Rawat, T.
    Lee, P.
    Patran, A.
    Shutler, P.
    Tan, T.
    Lee, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/147428.pdf
    Data publikacji:
    2006
    Wydawca:
    Instytut Chemii i Techniki Jądrowej
    Tematy:
    plasma focus
    deuterium
    helium-3
    fusion
    CR-39
    track detectors
    Opis:
    Abstract A 3 kJ plasma focus was operated with a 3He-D2 gas mixture, with partial pressures in the ratio of 2:1, corresponding to an atomic number ratio of 1:1 for 3He and D atoms. The fusion reactions D(3He,p)4He and D(d,p)3H were measured simultaneously using CR-39 polymer nuclear track detectors placed inside a pinhole camera positioned on the forward plasma focus axis. A sandwich arrangement of two 1000 mi m thick CR-39 detectors enabled the simultaneous registration of two groups of protons with approximate energies of 16 MeV and 3 MeV arising from the D(3He,p)4He and D(d,p)3H reactions, respectively. Radial track density distributions were obtained from each CR-39 detector and per-shot average distributions were calculated for the two groups of protons. It is found that the D(3He,p)4He and D(d,p)3H proton yields are of similar magnitude. Comparing the experimental distributions with results from a Monte Carlo simulation, it was deduced that the D(3He,p)4He fusion is concentrated close to the plasma focus pinch column, while the D(d,p)3H fusion occurs relatively far from the pinch. The relative absence of D(d,p)3H fusion in the pinch is one significant reason for concluding that the D(3He,p)4He fusion occurring in the plasma focus pinch is not thermonuclear in origin. It is argued that the bulk of the D(3He,p)4He fusion is due to energetic 3He2+ ions incident on a deuterium target. Possible explanations for differing spatial distributions of D(3He,p)4He and D(d,p)3H fusion in the plasma focus are discussed.
    Źródło:
    Nukleonika; 2006, 51, 1; 47-53
    0029-5922
    1508-5791
    Pojawia się w:
    Nukleonika
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Development of an indirect ELISA based on glycoprotein B gene for detecting of Feline herpesvirus type 1
    Autorzy:
    Tan, Y.
    Dong, G.
    Niu, J.
    Guo, Y.
    Yi, S.
    Sun, M.
    Wang, K.
    Hu, G.
    Powiązania:
    https://bibliotekanauki.pl/articles/2087468.pdf
    Data publikacji:
    2019
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    feline herpesvirus type 1
    gB protein
    indirect ELISA
    prokaryotic expression
    Źródło:
    Polish Journal of Veterinary Sciences; 2019, 3; 631-633
    1505-1773
    Pojawia się w:
    Polish Journal of Veterinary Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ultrafast Carrier Trapping and High Resistivity of MeV Energy Ion Implanted GaAs
    Autorzy:
    Korona, K. P.
    Jasiński, J.
    Kurpiewski, A.
    Kamińska, M.
    Jagadish, C.
    Tan, H. H.
    Krotkus, A.
    Marcinkevicius, S.
    Powiązania:
    https://bibliotekanauki.pl/articles/1951117.pdf
    Data publikacji:
    1996-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    61.72.Vv
    72.20.Jv
    72.80.Ey
    Opis:
    Semi-insulating GaAs wafers were implanted with MeV As, Ga, O or Si ions at doses ranging from 1×10$\text{}^{14}$ to 5×10$\text{}^{16}$ cm$\text{}^{-2}$. Their structural properties were studied by electron microscopy and the Rutherford backscattering-channeling. Time resolved photoluminescence, electrical conductivity and the Hall effect were used to determine carrier lifetime and electrical properties of the material. Annealing of the samples at 600°C led to the recovery of transport in conduction band. The As, Ga and O implanted samples became semi-insulating, while the Si implanted samples were n-type. Carrier trapping times were short, shorter than 1 ps for the highest dose used. Models explaining the fast photocarrier decay are discussed.
    Źródło:
    Acta Physica Polonica A; 1996, 90, 4; 851-854
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Role of Arsenic Antisite Defect in Nonstoichiometric Gallium Arsenide
    Autorzy:
    Jasiński, J.
    Kurpiewski, A.
    Korοna, K.
    Kamińska, M.
    Ρalczewska, M.
    Krotkus, A.
    Marcinkievicius, S.
    Liliental-Weber, Z.
    Tan, H. H.
    Jagadish, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1933772.pdf
    Data publikacji:
    1995-10
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.30.Er
    73.90.+f
    Opis:
    Over the last few years there have been many studies of GaAs layers grown at low temperatures (180-300°C), so called LT GaAs. The interest in LT GaAs was motivated by the potential application of 600oC annealed LT GaAs in microwave and fast optoelectronic devices because of its short photocarrier lifetime, reasonable mobility and high resistivity. These properties are associated with the nonstoichiometry of LT GaAs. Recently, studies of comparable material, nonstoichiometric GaAs produced by arsenic ion implantation have been initiated. There is still a strong controversy as to whether the arsenic antisite (As$\text{}_{Ga}$) or arsenic precipitates are responsible for unique electrical properties of both materials. This paper presents the results of structural and electrical studies of high energy As implanted GaAs and comments on relationships between the structure and the resulting electrical properties.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 4; 747-750
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-9 z 9

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