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Wyszukujesz frazę "Tan, C.-S." wg kryterium: Autor


Wyświetlanie 1-4 z 4
Tytuł:
A Review of Surface Deformation and Strain Measurement Using Two-Dimensional Digital Image Correlation
Autorzy:
Khoo, S.-W.
Karuppanan, S.
Tan, C.-S.
Powiązania:
https://bibliotekanauki.pl/articles/221852.pdf
Data publikacji:
2016
Wydawca:
Polska Akademia Nauk. Czytelnia Czasopism PAN
Tematy:
surface deformation
strain measurement
two-dimensional digital image correlation
Opis:
Among the full-field optical measurement methods, the Digital Image Correlation (DIC) is one of the techniques which has been given particular attention. Technically, the DIC technique refers to a non-contact strain measurement method that mathematically compares the grey intensity changes of the images captured at two different states: before and after deformation. The measurement can be performed by numerically calculating the displacement of speckles which are deposited on the top of object’s surface. In this paper, the Two-Dimensional Digital Image Correlation (2D-DIC) is presented and its fundamental concepts are discussed. Next, the development of the 2D-DIC algorithms in the past 33 years is reviewed systematically. The improvement of 2DDIC algorithms is presented with respect to two distinct aspects: their computation efficiency and measurement accuracy. Furthermore, analysis of the 2D-DIC accuracy is included, followed by a review of the DIC applications for two-dimensional measurements.
Źródło:
Metrology and Measurement Systems; 2016, 23, 3; 461-480
0860-8229
Pojawia się w:
Metrology and Measurement Systems
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
A planning model for the chemical integrated system under uncertainty by grey programming approach
Autorzy:
Ren, J.
Tan, S.
Dong, L.
Zhou, Z.
Gao, S.
Pan, C.
Powiązania:
https://bibliotekanauki.pl/articles/778898.pdf
Data publikacji:
2013
Wydawca:
Zachodniopomorski Uniwersytet Technologiczny w Szczecinie. Wydawnictwo Uczelniane ZUT w Szczecinie
Tematy:
planning
chemical integrated system
grey programming
Opis:
A model to optimize the planning of the chemical integrated system comprised by multi-devices and multi-products has been proposed in this paper. With the objective to make more profits, the traditional model for optimizing production planning has been proposed. The price of chemicals, the market demand, and the production capacity have been considered as mutative variables, then an improved model in which some parameters are not constant has been developed and a new method to solve the grey linear programming has been proposed. In the grey programming model, the value of credibility can be suggested by the decision-makers, and the results of the production planning calculated by the model can help them to achieve their desired target. An actual case has been studied by the proposed methodology, and the proposed methodology can be popularized to other cases.
Źródło:
Polish Journal of Chemical Technology; 2013, 15, 2; 16-22
1509-8117
1899-4741
Pojawia się w:
Polish Journal of Chemical Technology
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ultrafast Carrier Trapping and High Resistivity of MeV Energy Ion Implanted GaAs
Autorzy:
Korona, K. P.
Jasiński, J.
Kurpiewski, A.
Kamińska, M.
Jagadish, C.
Tan, H. H.
Krotkus, A.
Marcinkevicius, S.
Powiązania:
https://bibliotekanauki.pl/articles/1951117.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Vv
72.20.Jv
72.80.Ey
Opis:
Semi-insulating GaAs wafers were implanted with MeV As, Ga, O or Si ions at doses ranging from 1×10$\text{}^{14}$ to 5×10$\text{}^{16}$ cm$\text{}^{-2}$. Their structural properties were studied by electron microscopy and the Rutherford backscattering-channeling. Time resolved photoluminescence, electrical conductivity and the Hall effect were used to determine carrier lifetime and electrical properties of the material. Annealing of the samples at 600°C led to the recovery of transport in conduction band. The As, Ga and O implanted samples became semi-insulating, while the Si implanted samples were n-type. Carrier trapping times were short, shorter than 1 ps for the highest dose used. Models explaining the fast photocarrier decay are discussed.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 851-854
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Role of Arsenic Antisite Defect in Nonstoichiometric Gallium Arsenide
Autorzy:
Jasiński, J.
Kurpiewski, A.
Korοna, K.
Kamińska, M.
Ρalczewska, M.
Krotkus, A.
Marcinkievicius, S.
Liliental-Weber, Z.
Tan, H. H.
Jagadish, C.
Powiązania:
https://bibliotekanauki.pl/articles/1933772.pdf
Data publikacji:
1995-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.30.Er
73.90.+f
Opis:
Over the last few years there have been many studies of GaAs layers grown at low temperatures (180-300°C), so called LT GaAs. The interest in LT GaAs was motivated by the potential application of 600oC annealed LT GaAs in microwave and fast optoelectronic devices because of its short photocarrier lifetime, reasonable mobility and high resistivity. These properties are associated with the nonstoichiometry of LT GaAs. Recently, studies of comparable material, nonstoichiometric GaAs produced by arsenic ion implantation have been initiated. There is still a strong controversy as to whether the arsenic antisite (As$\text{}_{Ga}$) or arsenic precipitates are responsible for unique electrical properties of both materials. This paper presents the results of structural and electrical studies of high energy As implanted GaAs and comments on relationships between the structure and the resulting electrical properties.
Źródło:
Acta Physica Polonica A; 1995, 88, 4; 747-750
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-4 z 4

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