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Wyszukujesz frazę "Tan, C. P." wg kryterium: Autor


Wyświetlanie 1-3 z 3
Tytuł:
Sliding mode methods for fault detection and fault tolerant control with application to aerospace systems
Autorzy:
Edwards, C.
Alwi, H.
Tan, C. P.
Powiązania:
https://bibliotekanauki.pl/articles/331368.pdf
Data publikacji:
2012
Wydawca:
Uniwersytet Zielonogórski. Oficyna Wydawnicza
Tematy:
ruch ślizgowy
sterowanie ślizgowe
detekcja uszkodzeń
sterowanie tolerujące uszkodzenia
sliding modes
fault detection
fault tolerant control
control allocation
Opis:
Sliding mode methods have been historically studied because of their strong robustness properties with regard to a certain class of uncertainty, achieved by employing nonlinear control/injection signals to force the system trajectories to attain in finite time a motion along a surface in the state-space. This paper will consider how these ideas can be exploited for fault detection (specifically fault signal estimation) and subsequently fault tolerant control. It will also describe applications of these ideas to aerospace systems, including piloted flight simulator results associated with the GARTEUR AG16 Action Group on Fault Tolerant Control. The results demonstrate a successful real-time implementation of the proposed fault tolerant control scheme on a motion flight simulator configured to represent the post-failure EL-AL aircraft.
Źródło:
International Journal of Applied Mathematics and Computer Science; 2012, 22, 1; 109-124
1641-876X
2083-8492
Pojawia się w:
International Journal of Applied Mathematics and Computer Science
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Osteology of the Late Cretaceous alvarezsauroid Linhenykus monodactylus from China and comments on alvarezsauroid biogeography
Autorzy:
Xu, X.
Upchurch, P.
Ma, Q.
Pittman, M.
Choiniere, J.
Sullivan, C.
Hone, D.W.E.
Tan, Q.
Tan, L.
Xiao, D.
Han, F.
Powiązania:
https://bibliotekanauki.pl/articles/20629.pdf
Data publikacji:
2013
Wydawca:
Polska Akademia Nauk. Instytut Paleobiologii PAN
Tematy:
osteology
Cretaceous
Late Cretaceous
alvarezsauroid
Linhenykus monodactylus
China
biogeography
Dinosauria
Theropoda
Parvicursorinae
Treefitte
dispersal
vicariance
sympatry
Wulansuhai Formation
Inner Mongolia
Opis:
The alvarezsauroid theropod Linhenykus monodactylus from the Upper Cretaceous of Inner Mongolia, China is the first knownmonodactyl non−avian dinosaur, providing important information on the complex patterns of manual evolution seen in alvarezsauroids. Herewe provide a detailed description of the osteology of this taxon. Linhenykus shows a number of fea− tures that are transitional between parvicursorine and non−parvicursorine alvarezsauroids, but detailed comparisons also re− veal that some characters had a more complex distribution. We also use event−based tree−fitting to perform a quantitative analysis of alvarezsauroid biogeography incorporating several recently discovered taxa. The results suggest that there is no statistical support for previous biogeographic hypotheses that favour pure vicariance or pure dispersal scenarios as explana− tions for the distributions of alvarezsauroids across SouthAmerica, NorthAmerica andAsia. Instead, statistically significant biogeographic reconstructions suggest a dominant role for sympatric (or “within area”) events, combined with a mix of vicariance, dispersal and regional extinction. At present the alvarezsauroid data set is too small to completely resolve the biogeographic history of this group: future studies will need to create larger data sets that encompass additional clades.
Źródło:
Acta Palaeontologica Polonica; 2013, 58, 1
0567-7920
Pojawia się w:
Acta Palaeontologica Polonica
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ultrafast Carrier Trapping and High Resistivity of MeV Energy Ion Implanted GaAs
Autorzy:
Korona, K. P.
Jasiński, J.
Kurpiewski, A.
Kamińska, M.
Jagadish, C.
Tan, H. H.
Krotkus, A.
Marcinkevicius, S.
Powiązania:
https://bibliotekanauki.pl/articles/1951117.pdf
Data publikacji:
1996-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Vv
72.20.Jv
72.80.Ey
Opis:
Semi-insulating GaAs wafers were implanted with MeV As, Ga, O or Si ions at doses ranging from 1×10$\text{}^{14}$ to 5×10$\text{}^{16}$ cm$\text{}^{-2}$. Their structural properties were studied by electron microscopy and the Rutherford backscattering-channeling. Time resolved photoluminescence, electrical conductivity and the Hall effect were used to determine carrier lifetime and electrical properties of the material. Annealing of the samples at 600°C led to the recovery of transport in conduction band. The As, Ga and O implanted samples became semi-insulating, while the Si implanted samples were n-type. Carrier trapping times were short, shorter than 1 ps for the highest dose used. Models explaining the fast photocarrier decay are discussed.
Źródło:
Acta Physica Polonica A; 1996, 90, 4; 851-854
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-3 z 3

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