Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Taliashvili, B." wg kryterium: Autor

  Lista filtrów
Wyrównaj
    Wyświetlanie 1-8 z 8
    Tytuł:
    Epitaxial Growth and Optical Properties of PbTe/CdTe Semiconductor Heterostructures
    Autorzy:
    Szot, M.
    Kowalczyk, L.
    Smajek, E.
    Domukhovski, V.
    Domagała, J.
    Łusakowska, E.
    Taliashvili, B.
    Dziawa, P.
    Knoff, W.
    Wiater, M.
    Wojtowicz, T.
    Story, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811996.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    78.55.Hx
    78.67.De
    78.67.Hc
    78.67.Pt
    Opis:
    Growth optimization, optical and structural properties of PbTe/CdTe multilayers grown by molecular beam epitaxy on GaAs (001) as well as on $BaF_2$ (111) substrates is reported. An intense photoluminescence in the mid-infrared region is observed from PbTe quantum wells excited with 1.17 eV pulsed YAG:Nd laser. The energy of the emission peak shows blue shift with decreasing PbTe well width and has a positive temperature coefficient. The influence of thermal annealing on photoluminescence spectra of PbTe/CdTe multilayers grown on $BaF_2$ substrate is discussed.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1391-1396
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    (Eu,Gd)Te - MBE Growth and Characterization
    Autorzy:
    Dziawa, P.
    Taliashvili, B.
    Domuchowski, W.
    Łusakowska, E.
    Arciszewska, M.
    Demchenko, I.
    Dobrowolski, W.
    Dybko, K.
    Fedorych, O. M.
    Nadolny, A. J.
    Osinniy, V.
    Petrouchyk, A.
    Story, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/2038228.pdf
    Data publikacji:
    2004-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    81.15.Hi
    Opis:
    Monocrystalline thin layers of (Eu,Gd)Te, n-type ferromagnetic semiconductor, were grown by molecular beam epitaxy technique on BaF$\text{}_{2}$ (111) substrates. Reflection high-energy electron diffraction, X-ray diffraction, and atomic force microscopy characterization proved epitaxial mode of growth and high crystal quality of the layers. Magnetic susceptibility and magnetic resonance measurements showed that in (Eu,Gd)Te layers ferromagnetic transition takes place at about 13 K. Electrical characterization carried out by the Hall effect and resistivity measurements revealed very high electron concentration of 10$\text{}^{20}$~cm$\text{}^{-3}$ and sharp maximum of resistivity at transition temperature.
    Źródło:
    Acta Physica Polonica A; 2004, 106, 2; 215-221
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fano Resonance Investigation of PbTe Layers Containing Eu and Gd Ions
    Autorzy:
    Orlowski, B.
    Osinniy, V.
    Dziawa, P.
    Pietrzyk, M.
    Kowalski, B.
    Taliashvili, B.
    Story, T.
    Johnson, R.
    Powiązania:
    https://bibliotekanauki.pl/articles/1812243.pdf
    Data publikacji:
    2008-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    71.20.Mq
    Opis:
    The Fano resonance photoemission studies of Gd/(Pb, Gd)Te layers using synchrotron radiation were carried out and the electronic structure parameters like binding energies of $Gd^{3+}$ 4f and 5p shells, resonance and antiresonance energies for $Gd^{3+}$ were determined. The presence of $Eu^{3+}$ ions was observed in the (Pb, Eu)Te and (Eu, Gd)Te layers grown by MBE technique. The comparison of data for (Pb, Gd)Te compound with corresponding data for (Eu, Gd)Te and (Pb, Eu)Te layers indicates that we are not able to distinct the $Eu^{3+}4f$ and $Gd^{3+}4f$ electrons contribution to the valence band photoemission spectra because of small content od Gd and similar binding energy values. The key parameters allowing to prove exactly the presence of either $Eu^{3+}$ or $Gd^{3+}$ are the resonance and antiresonance energies which are significantly different for these ions and equal to 143 eV/137 eV and 150 eV/142 eV, respectively.
    Źródło:
    Acta Physica Polonica A; 2008, 114, 2; 351-356
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Fano Resonance of Eu$\text{}^{2+}$ and Eu$\text{}^{3+}$ in (Eu,Gd)Te MBE Layers
    Autorzy:
    Orlowski, B. A.
    Kowalski, B. J.
    Dziawa, P.
    Pietrzyk, M.
    Mickievicius, S.
    Osinniy, V.
    Taliashvili, B.
    Kowalik, I. A.
    Story, T.
    Johnson, R. L.
    Powiązania:
    https://bibliotekanauki.pl/articles/2044511.pdf
    Data publikacji:
    2005-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    79.60.-i
    71.20.Mq
    Opis:
    Resonant photoemission spectroscopy, with application of synchrotron radiation, was used to study the valence band electronic structure of clean surface of (EuGd)Te layers. Fano-type resonant photoemission spectra corresponding to the Eu 4d-4f transition were measured to determine the contribution of 4f electrons of Eu$\text{}^{2+}$ and Eu$\text{}^{3+}$ ions to the valence band. The resonant and antiresonant photon energies of Eu$\text{}^{2+}$ ions were found as equal to 141 V and 132 eV, respectively and for Eu$\text{}^{3+}$ ions were found as equal to 146 eV and 132 eV, respectively. Contribution of Eu$\text{}^{2+}$4f electrons was found at the valence band edge while for Eu$\text{}^{3+}$ it was located in the region between 3.5 eV and 8.5 eV below the valence band edge.
    Źródło:
    Acta Physica Polonica A; 2005, 108, 5; 803-807
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Ferromagnetic Transition in $Ge_{1-x}Mn_{x}Te$ Layers
    Autorzy:
    Knoff, W.
    Domukhovski, V.
    Dybko, K.
    Dziawa, P.
    Jakieła, R.
    Łusakowska, E.
    Reszka, A.
    Świątek, K.
    Taliashvili, B.
    Story, T.
    Szałowski, K.
    Balcerzak, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/1791343.pdf
    Data publikacji:
    2009-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    75.30.Et
    81.15.Hi
    Opis:
    Ferromagnetic transition temperature in thin layers of diluted magnetic (semimagnetic) semiconductor $Ge_{1-x}Mn_{x}Te$ was studied experimentally by SQUID magnetometry method and analyzed theoretically for a model Ising-type diluted magnetic system with Ruderman-Kittel-Kasuya-Yosida indirect exchange interaction. The key features of the experimentally observed dependence of the Curie temperature on Mn content (x ≤ 0.12) and conducting hole concentration p = (1-10) × $10^{21} cm^{-3}$ were reproduced theoretically for realistic valence band and crystal lattice parameters of p-$Ge_{1-x}Mn_{x}Te$ taking into account short carrier mean free path encountered in this material and Ruderman-Kittel-Kasuya-Yosida mechanism with both delta-like and diffused character of spatial dependence of the exchange coupling between magnetic ions and free carriers.
    Źródło:
    Acta Physica Polonica A; 2009, 116, 5; 904-906
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetic and structural studies of GeMnSnTe epitaxial layers
    Autorzy:
    Grochot, A.
    Knoff, W.
    Taliashvili, B.
    Wołkanowicz, W.
    Minikayev, R.
    Pieniążek, A.
    Łusakowska, E.
    Sawicki, M.
    Jantsch, W.
    Story, T.
    Przybylińska, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/1055147.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.30.Gw
    75.50.Pp
    76.50.+g
    Opis:
    MBE grown Ge_{1-x-y}Mn_xSn_yTe layers with Mn content ranging from 10 to 30% and Sn content ranging from 2 to 5% have been characterized with X-ray diffraction, energy-dispersive X-Ray spectroscopy, atomic force microscopy, SQUID magnetometry, and ferromagnetic resonance. All layers (except the one with the highest Mn and Sn content) were found to be single phase rhombohedral, with the distortion axis perpendicular to the layer surface, and ferromagnetic. Ferromagnetic resonance studies have shown that co-doping with a few percent of tin makes the lattice more rigid and changes considerably the magnetocrystalline anisotropy, from purely uniaxial in GeMnTe to distorted cubic in Ge_{1-x-y}Mn_xSn_yTe at the same Mn content.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 340-342
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Magnetic Properties of Epitaxial (Ge,Mn)Te Thin Films with Varying Crystal Stoichiometry
    Autorzy:
    Knoff, W.
    Domukhovski, V.
    Dybko, K.
    Dziawa, P.
    Górska, M.
    Jakieła, R.
    Łusakowska, E.
    Taliashvili, B.
    Story, T.
    Reszka, A.
    Anderson, J.
    Rotundu, C.
    Powiązania:
    https://bibliotekanauki.pl/articles/1811940.pdf
    Data publikacji:
    2008-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    75.50.Pp
    Opis:
    Magnetization of 1 μm thick ferromagnetic IV-VI (Ge, Mn)Te semiconductor layers with 10 at.% of Mn was studied by SQUID magnetometry method up to the magnetic fields of 70 kOe. The layers were grown on BaF₂ (111) substrates by molecular beam epitaxy with varying Te molecular flux, which permitted the control of layer stoichiometry and conducting hole concentration. X-ray diffraction and in situ electron diffraction characterization of layer growth and crystal structure revealed two-dimensional mode of growth and monocrystalline rhombohedral crystal structure of (Ge, Mn)Te layers. Controlling the layer stoichiometry influences the temperature dependence of magnetization with the ferromagnetic Curie temperature varying in $Ge_{0.9}Mn_{0.1}Te$ layers from $T_c$=30 K (low Te flux) to $T_c$=42 K (high Te flux).
    Źródło:
    Acta Physica Polonica A; 2008, 114, 5; 1159-1165
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Microhardness and the Young Modulus of Thin, MBE-Grown, (Sn,Mn)Te Layers Containing up to 8% of Mn
    Autorzy:
    Adamiak, S.
    Zięba, M.
    Minikayev, R.
    Reszka, A.
    Taliashvili, B.
    Szuszkiewicz, W.
    Powiązania:
    https://bibliotekanauki.pl/articles/1033220.pdf
    Data publikacji:
    2017-08
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    62.20.de
    62.20.Qp
    68.60.Bs
    Opis:
    The thin layers of (Sn,Mn)Te solid solution were grown by molecular beam epitaxy onto (111)-oriented BaF₂ substrates and characterized by scanning electron microscopy, atomic force microscopy, energy dispersive X-ray spectrometry, and X-ray diffraction methods. The epitaxial character of the growth was confirmed. All the layers exhibited a regular (fcc) structure of the rock-salt type and were (111)-oriented, their thickness was close to about 1 μm. The layers contained up to 8% of Mn. The microhardness and the Young modulus values were determined by the nanoindentation measurements. The Berkovich type of the intender was applied, the maximum applied load was equal to 1 mN. The results of measurements demonstrated a lack of the composition dependence of the Young modulus value. A slight increase of the microhardness value with an increasing Mn content in the (Sn,Mn)Te solid solution was observed.
    Źródło:
    Acta Physica Polonica A; 2017, 132, 2; 347-350
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-8 z 8

      Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies