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    Wyświetlanie 1-7 z 7
    Tytuł:
    Instalacja energetyczna użytkowana w wybranym budynku : ocena wybranych parametrów technicznych
    Analysis of electrical energy consumption on the example of a selected building
    Autorzy:
    Suproniuk, Marek
    Paś, Jacek
    Powiązania:
    https://bibliotekanauki.pl/articles/210858.pdf
    Data publikacji:
    2019
    Wydawca:
    Wojskowa Akademia Techniczna im. Jarosława Dąbrowskiego
    Tematy:
    pomiar parametrów jakości energii elektrycznej
    wyższe harmoniczne napięcia/prądu
    electricity quality parameters measurement
    higher harmonics of current/voltage
    Opis:
    W Polsce ok. 95% energii elektrycznej wytwarza się w procesie spalania węgla [6, 7]. Oszczędzanie energii elektrycznej daje wymierne efekty ekonomiczne związane z mniejszymi rachunkami, a także przyczynia się do ochrony środowiska naturalnego. Pochodną tego są oszczędności związane z naszym zdrowiem, mniejszą degradacją środowiska naturalnego, czy w efekcie oszczędności złóż energii. W artykule przedstawiono zagadnienia związane z analizą zużycia energii elektrycznej w wybranym obiekcie budowlanym. Uwzględniono dwa następujące zagadnienia - analizę dokumentów związanych z zasilaniem w energię elektryczną, rozdziałem energii, poborem mocy poszczególnych odbiorników i reżimami czasowymi pracy odbiorników w obiekcie oraz analizę odczytów analizatora energii elektrycznej zainstalowanego na obiekcie.
    In Poland, approx. 95% of electrical energy is generated in a coal combustion process. Saving electrical energy gives economic effects related to the smaller fees and contributes to protection of the natural environment. Additionally, saving electrical energy should translate into our health, lesser degradation of the natural environment, or less consumption of natural deposits of energy. The paper has presented the issues related to analysis of energy consumption in a selected building object. The analyse includes the following issues - document analysis related to the building’s power, energy distribution, and power consumption of individual load and time regimes of work of receivers in the object and analysis of electrical energy which has been measured in a building.
    Źródło:
    Biuletyn Wojskowej Akademii Technicznej; 2019, 68, 1; 165-174
    1234-5865
    Pojawia się w:
    Biuletyn Wojskowej Akademii Technicznej
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modelling of changes in the resistivity of semi-insulating materials
    Autorzy:
    Suproniuk, Marek
    Powiązania:
    https://bibliotekanauki.pl/articles/1849000.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    resistivity
    semiconductor
    gallium phosphide
    silicon carbide
    Opis:
    Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H-SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
    Źródło:
    Metrology and Measurement Systems; 2021, 28, 3; 581-592
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modelling of changes in the resistivity of semi-insulating materials
    Autorzy:
    Suproniuk, Marek
    Powiązania:
    https://bibliotekanauki.pl/articles/1849019.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    resistivity
    semiconductor
    gallium phosphide
    silicon carbide
    Opis:
    Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H-SiC) presented in the article, it is possible to calculate their resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
    Źródło:
    Metrology and Measurement Systems; 2021, 28, 3; 581-592
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Modelling of changes in the resistivity of semi-insulating materials
    Autorzy:
    Suproniuk, Marek
    Powiązania:
    https://bibliotekanauki.pl/articles/1849057.pdf
    Data publikacji:
    2021
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    resistivity
    semiconductor
    gallium phosphide
    silicon carbide
    Opis:
    Electrical properties of semiconductor materials depend on their defect structure. Point defects, impurities or admixture contained in a semiconductor material, strongly affect its properties and determine the performance parameters of devices made on its basis. The results of the currently used methods of examining the defect structure of semiconductor material are imprecise due to solution of ill-posed equations. These methods do not allow for determination of concentration of the defect centers examined. Improving the resolution of the obtained parameters of defect centers, determining their concentration and studying changes in the resistivity of semi-insulating materials can be carried out, among others, by modelling changes in the concentration of carriers in the conduction and valence bands. This method allows to determine how charge compensation in the material affects the changes in its resistivity. Calculations based on the Fermi-Dirac statistics can complement the experiment and serve as a prediction tool for identifying and characterizing defect centers. Using the material models (GaP, 4H–SiC) presented in the article, it is possible to calculatetheir resistivity for various concentrations of defect centers in the temperature range assumed by the experimenter. The models of semi-insulating materials presented in the article were built on the basis of results of testing parameters of defect centers with high-resolution photoinduced transient spectroscopy (HRPITS). The current research will allow the use of modelling to determine optimal parameters of semi-insulating semiconductor materials for use in photoconductive semiconductor switches (PCSS).
    Źródło:
    Metrology and Measurement Systems; 2021, 28, 3; 581-592
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Practical problems for introductory electrical engineering
    Autorzy:
    Makal, Jarosław
    Alinejad, Aria
    Lundheim, Lars
    Bolstad, Torstein
    Tybell, Thomas
    Hardeberg Zimmermann, Pauline
    Białostocka, Anna
    Choroszucho, Agnieszka
    Forenc, Jarosław
    Karpiuk, Andrzej
    Sierocka, Honorata
    Steckiewicz, Adam
    Gajić, Bojana
    Raičević,, Nebojša B.
    Suproniuk, Marek
    Powiązania:
    https://bibliotekanauki.pl/books/2204855.pdf
    Data publikacji:
    2023
    Wydawca:
    Politechnika Białostocka. Oficyna Wydawnicza Politechniki Białostockiej
    Opis:
    What makes up a good problem? We will not attempt to give a complete answer to that question. A partial answer is that, for engineering education, it is desirable if a problem in some sense is practical. It should, if possible, relate to the students’ previous experience, connect to applications that the student knows or is about to learn about. Such experienced relevance of the problem might be the spark that inspires an otherwise marginally motivated learner.When selecting problems for this booklet, we have chosen such ones that in our experience have served us well. Several of them have been developed and revised in collaboration with students and learning assistants and have been tried out in courses at our respective institutions. Even though intended learning objectives may be common, the actual syllabus and course construction must always be adapted to local culture, tradition and administrative requirements. A reader may find that some of our suggestions fit well with his or her own way of teaching, others not.
    Dostawca treści:
    Biblioteka Nauki
    Książka
      Wyświetlanie 1-7 z 7

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