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    Tytuł:
    Cold Zone Exploration Using Position of Maximum Nusselt Number for Inclined Air Jet Cooling
    Autorzy:
    Ingole, S. B.
    Sundaram, K. K.
    Powiązania:
    https://bibliotekanauki.pl/articles/139691.pdf
    Data publikacji:
    2017
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    jet impingement
    inclined jet
    cold zone
    air jet cooling
    uderzenie strumienia
    strumień nachylony
    strefa zimna
    chłodzenie strumieniem powietrza
    Opis:
    Inclined jet air cooling can be effectively used for cooling of electronics or other such applications. The non-confined air jet is impinged and experimentally investigated on the hot target surface to be cooled, which is placed horizontally. Analysis and evaluations are made by introduction of a jet on the leading edge and investigated for downhill side cooling to identify cold spots. The jet Reynolds number in the range of 2000 ≤ Re ≤ 20 000 is examined with a circular jet for inclination (θ) of 15 less than θ less than 75 degree. Also, the consequence of a jet to target distance (H) is explored in the range 0.5 ≤ H/D ≤ 6.8. For 45 degree jet impingement, the maximum Nusselt number is widely spread. Location of maximum Nusselt number is studied, which indicates cold spots identification. At a higher angle ratio, the angle is the dominating parameter compared to the Reynolds Number. Whereas at a lower angle ratio, the inclined jet with a higher Reynolds number is giving the cooling point away from leading edge. It is observed that for a particular angle of incident location of maximum Nusselt Number, measured from leading edge of target, is ahead than that of stagnation point in stated conditions.
    Źródło:
    Archive of Mechanical Engineering; 2017, LXIV, 4; 533-549
    0004-0738
    Pojawia się w:
    Archive of Mechanical Engineering
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Growth and characterisation of LWIR T2SL on (100)-, (211)- and (311)-oriented GaSb substrates
    Autorzy:
    Lubyshev, Dmitri
    Fastenau, Joel M.
    Kattner, Michael
    Frey, Philip
    Nelson, Scott A.
    Flick, Ryan
    Wu, Ying
    Liu, Amy W. K.
    Szymanski, Dennis E.
    Martinez, Becky
    Furlong, Mark J.
    Dennis, Richard
    Bundas, Jason
    Sundaram, Mani
    Powiązania:
    https://bibliotekanauki.pl/articles/2204213.pdf
    Data publikacji:
    2023
    Wydawca:
    Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
    Tematy:
    focal plane arrays
    InAs/InAsSb
    photodetectors
    long wavelength infrared type-II superlattice
    metamorphic buffers
    superlattice period reduction
    Opis:
    Ga-free InAs/InAsSb type-II superlattice structures grown on GaSb substrates have demonstrated high performance for mid-wave infrared applications. However, realisation of long wavelength infrared photodetectors based on this material system still presents challenges, especially in terms of reduced quantum efficiency. This reduction is due, in part, to the increased type-II superlattice period required to attain longer wavelengths, as thicker periods decrease the wave-function overlap for the spatially separated quantum wells. One way to improve long wavelength infrared performance is to modify the type-II superlattice designs with a shorter superlattice period for a given wavelength, thereby increasing the wave-function overlap and the resulting optical absorption. Long wavelength infrared epitaxial structures with reduced periods have been realised by shifting the lattice constant of the type-II superlattice from GaSb to AlSb. Alternatively, epitaxial growth on substrates with orientations different than the traditional (100) surface presents another way for superlattice period reduction. In this work, the authors evaluate the performance of long wavelength infrared type-II superlattice detectors grown by molecular beam epitaxy using two different approaches to reduce the superlattice period: first, a metamorphic buffer to target the AlSb lattice parameter, and second, structures lattices matched to GaSb using substrates with different orientations. The use of the metamorphic buffer enabled a ~30% reduction in the superlattice period compared to reference baseline structures, maintaining a high quantum efficiency, but with the elevated dark current related to defects generated in the metamorphic buffer. Red-shift in a cut-off wavelength obtained from growths on highindex substrates offers a potential path to improve the infrared photodetector characteristics. Focal plane arrays were fabricated on (100), (311)A- and (211)B-oriented structures to compare the performance of each approach.
    Źródło:
    Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144568
    1230-3402
    Pojawia się w:
    Opto-Electronics Review
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-2 z 2

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