Autor: Stavrinides, S. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: The Concept of Unidirectionally Coupled Nonlinear Circuits via a Memristor
Autorzy:: Volos, Ch.
Kyprianidis, I.
Stouboulos, I.
Stavrinides, S.
Anagnostopoulos, A.
Ozer, M.
Powiązania:: https://bibliotekanauki.pl/articles/1491463.pdf
Data publikacji:: 2012-01
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 05.45.Xt
Opis:: Confirmation of the existence of memristor by researchers at 2008 attracts much interest on this newly found circuit element. This is due to the fact that memristor opens up new functionalities in electronics and it has led to the interpretation of phenomena regarding not only electronics but also biological systems. In this work, we have studied the simulated dynamic behavior of two unidirectionally coupled nonlinear circuits via a memristor. This confirms the transition from chaotic desynchronization to complete chaotic synchronization through a regime of intermittent synchronization between the unidirectionally coupled circuits.
Źródło:: Acta Physica Polonica A; 2012, 121, 1; 268-270
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Study of the Electrical Behavior of Metal/α-SiC:H/poly-Si(N) Structure Using Simulation
Autorzy:: Papadopoulou, P.
Stavrinides, S.
Hanias, M.
Magafas, L.
Powiązania:: https://bibliotekanauki.pl/articles/1401377.pdf
Data publikacji:: 2015-04
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 85.30.De
85.30.Mn
85.30.Hi
Opis:: In this report, a study of the electrical behavior for the Metal/a-SiC/poly-Si(n) structure, appears. Different thicknesses of a-SiC:H thin films are considered; in specific the a-SiC:H layer thickness is varied between 100 Å up to 800 Å. The 2-D ATLAS advanced numerical simulator has been utilized in order to simulate the material's electrical behavior and produce the reported hereby results. The study of the I-V (current-voltage) characteristics of these Metal/α-SiC:H/poly-Si(N) structures, reveals a very interesting hysteretic behavior that is a function of the a-SiC:H thin-film thickness. Such materials have lately raised the engineering community's interest because of their possible utilization as memristive elements.
Źródło:: Acta Physica Polonica A; 2015, 127, 4; 1349-1351
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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