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Wyszukujesz frazę "Stadler, A." wg kryterium: Autor

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    Wyświetlanie 1-6 z 6
    Tytuł:
    Optimum EMC design of flyback and load resonant converters using toroids with air gaps
    Autorzy:
    Stadler, A.
    Albach, M.
    Durbaum, T.
    Powiązania:
    https://bibliotekanauki.pl/articles/262737.pdf
    Data publikacji:
    2005
    Wydawca:
    Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie
    Tematy:
    transformers
    toroidal core
    magnetic stray field
    power converter
    Opis:
    In this paper the external magnetic stray field is investigated in transformers realized on gapped toroids with a rectangular cross section. An analytical method is used in which the field distribution is calculated by means of orthogonal expansion. As a conclusion it is shown that optimum EMC design for the case of a flyback converter is given by the results for a simple inductor. In case of a load resonant converter minimum parasitic induction is obtained, if the winding conducting maximum current is located exactly above the air gap. The second winding has to be located as close as possible to the first one with respect to the desired value of the total leakage inductance.
    Źródło:
    Electrical Power Quality and Utilisation. Journal; 2005, 11, 2; 15-22
    1896-4672
    Pojawia się w:
    Electrical Power Quality and Utilisation. Journal
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Noise spectroscopy of resistive components at elevated temperature
    Autorzy:
    Stadler, A.W.
    Zawiślak, Z.
    Dziedzic, A.
    Nowak, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/221348.pdf
    Data publikacji:
    2014
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    noise spectroscopy
    low-frequency noise
    resistance noise
    low-frequency noise measurements
    thick-film resistors
    Opis:
    Studies of electrical properties, including noise properties, of thick-film resistors prepared from various resistive and conductive materials on LTCC substrates have been described. Experiments have been carried out in the temperature range from 300 K up to 650 K using two methods, i.e. measuring (i) spectra of voltage fluctuations observed on the studied samples and (ii) the current noise index by a standard meter, both at constant temperature and during a temperature sweep with a slow rate. The 1/f noise component caused by resistance fluctuations occurred to be dominant in the entire range of temperature. The dependence of the noise intensity on temperature revealed that a temperature change from 300 K to 650 K causes a rise in magnitude of the noise intensity approximately one order of magnitude. Using the experimental data, the parameters describing noise properties of the used materials have been calculated and compared to the properties of other previously studied thick-film materials.
    Źródło:
    Metrology and Measurement Systems; 2014, 21, 1; 15-26
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Noise properties of thin-film Ni-P resistors embedded in printed circuit boards
    Autorzy:
    Stadler, A. W.
    Zawiślak, Z.
    Stęplewski, W.
    Dziedzic, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/201274.pdf
    Data publikacji:
    2013
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    thin-film resistors
    Ni-P foil
    1/f noise
    low-frequency noise measurements
    Opis:
    Noise studies of planar thin-film Ni-P resistors made in/on Printed Circuit Boards, both covered with two different types of cladding or uncladded have been described. The resistors have been made of the resistive-conductive-material (Ohmega-Ply©) of 100 Ώ/sq. Noise of the selected pairs of samples has been measured in the DC resistance bridge with a transformer as the first stage in a signal path. 1/f noise caused by resistance fluctuations has been found to be the main noise component. Parameters describing noise properties of the resistors have been calculated and then compared with the parameters of other previously studied thin- and thick-film resistive materials.
    Źródło:
    Bulletin of the Polish Academy of Sciences. Technical Sciences; 2013, 61, 3; 731-735
    0239-7528
    Pojawia się w:
    Bulletin of the Polish Academy of Sciences. Technical Sciences
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Noise Properties Of Thick-Film Conducting Lines For Integrated Inductors
    Autorzy:
    Stadler, A. W.
    Kolek, A.
    Mleczko, K.
    Zawiślak, Z.
    Dziedzic, A.
    Nowak, D.
    Powiązania:
    https://bibliotekanauki.pl/articles/221399.pdf
    Data publikacji:
    2015
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    low-frequency noise
    thick-film conducting layer
    thick-film inductor
    Opis:
    Studies of noise properties of thick-film conducting lines from Au or PdAg conductive pastes on LTCC or alumina substrates are reported. Experiments have been carried out at the room temperature on samples prepared in the form of meanders by traditional screen-printing or laser-shaping technique. Due to a low resistance of the devices under test (DUTs), low-frequency noise spectra have been measured for the dc-biased samples arranged in a bridge configuration, transformer-coupled to a low-noise amplifier. The detailed analysis of noise sources in the signal path and its transfer function, including the transformer, has been carried out, and a procedure for measurement setup self-calibration has been described. The 1/f noise component originating from resistance fluctuations has been found to be dominant in all DUTs. The analysis of experimental data leads to the conclusion that noise is produced in the bends of meanders rather than in their straight segments. It occurs that noise of Au-based laser-shaped lines is significantly smaller than screen-printed ones. PdAg lines have been found more resistive but simultaneously less noisy than Au-based lines.
    Źródło:
    Metrology and Measurement Systems; 2015, 22, 2; 229-240
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Noise Measurements Of Resistors With The Use Of Dual-Phase Virtual Lock-In Technique
    Autorzy:
    Stadler, A. W.
    Kolek, A.
    Zawiślak, Z.
    Dziedzic, A.
    Powiązania:
    https://bibliotekanauki.pl/articles/221468.pdf
    Data publikacji:
    2015
    Wydawca:
    Polska Akademia Nauk. Czytelnia Czasopism PAN
    Tematy:
    1/f noise
    polymer thick-film resistor
    low-frequency noise measurements
    virtual lock-in
    Opis:
    Measurement of low-frequency noise properties of modern electronic components is a very demanding challenge due to the low magnitude of a noise signal and the limit of a dissipated power. In such a case, an ac technique with a lock-in amplifier or the use of a low-noise transformer as the first stage in the signal path are common approaches. A software dual-phase virtual lock-in (VLI) technique has been developed and tested in low-frequency noise studies of electronic components. VLI means that phase-sensitive detection is processed by a software layer rather than by an expensive hardware lock-in amplifier. The VLI method has been tested in exploration of noise in polymer thick-film resistors. Analysis of the obtained noise spectra of voltage fluctuations confirmed that the 1/f noise caused by resistance fluctuations is the dominant one. The calculated value of the parameter describing the noise intensity of a resistive material, C= 1·10−21m3, is consistent with that obtained with the use of a dc method. On the other hand, it has been observed that the spectra of (excitation independent) resistance noise contain a 1/f component whose intensity depends on the excitation frequency. The phenomenon has been explained by means of noise suppression by impedances of the measurement circuit, giving an excellent agreement with the experimental data.
    Źródło:
    Metrology and Measurement Systems; 2015, 22, 4; 503-512
    0860-8229
    Pojawia się w:
    Metrology and Measurement Systems
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Compensation Models in Chlorine Doped CdTe Based on Positron Annihilation and Photoluminescence Spectroscopy
    Autorzy:
    Stadler, W.
    Hofmann, D. M.
    Meyer, B. K.
    Krause-Rehberg, R.
    Polity, A.
    Abgarjan, Th.
    Salk, M.
    Benz, K. W.
    Azoulay, M.
    Powiązania:
    https://bibliotekanauki.pl/articles/1934007.pdf
    Data publikacji:
    1995-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    71.55.Gs
    78.70.Bj
    78.55.Et
    Opis:
    In this investigation positron annihilation, photoluminescence and electron paramagnetic resonance techniques are employed to gain insight in the compensation of CdTe doped with the halogen Cl. We will demonstrate that the high resistivity of CdTe:Cl cannot be explained by the interaction between the shallow effective mass type donor Cl on Te site and the doping induced shallow acceptor complex, a Cd vacancy paired off with a nearest-neighbour Cl atom (A centre). From electron paramagnetic resonance investigations we conclude that the mid gap trap, often detected by electrical methods in CdTe, is not the isolated Cd vacancy.
    Źródło:
    Acta Physica Polonica A; 1995, 88, 5; 921-924
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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