- Tytuł:
- Coupling of LO Phonons to Excitons in GaN
- Autorzy:
-
Wysmołek, A.
Łomiak, P.
Baranowski, J. M.
Pakuła, K.
Stępniewski, R.
Korona, K. P.
Grzegory, I.
Boćkowski, M.
Porowski, S. - Powiązania:
- https://bibliotekanauki.pl/articles/1952430.pdf
- Data publikacji:
- 1996-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
78.55.Cr
63.20.Mt
71.55.Eq - Opis:
- The photoluminescence of homoepitaxial and heteroepitaxial GaN layers is reported. It is shown that the coupling between LO phonons and neutral acceptor bound excitons is much stronger than the coupling between LO phonons and neutral donor bound excitons. In undoped homoepitaxial layer, in spite of that the no-phonon emission due to donor bound excitons is one order of magnitude stronger than the acceptor bound excitons emission, the predominant structure in the LO phonon replica of the excitonic spectrum is related to optical transitions involving acceptor bound excitons. Temperature studies showed that at higher temperature the LO phonon replica is related to free excitons.
- Źródło:
-
Acta Physica Polonica A; 1996, 90, 5; 981-984
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki