- Tytuł:
- Schottky Junctions Based on the ALD-ZnO Thin Films for Electronic Applications
- Autorzy:
-
Krajewski, T.
Luka, G.
Smertenko, P.
Zakrzewski, A.
Dybko, K.
Jakiela, R.
Wachnicki, L.
Gieraltowska, S.
Witkowski, B.
Godlewski, M.
Guziewicz, E. - Powiązania:
- https://bibliotekanauki.pl/articles/1492501.pdf
- Data publikacji:
- 2011-12
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
68.55.ag
73.50.-h
73.50.Bk
73.61.Ga
81.15.-z
81.15.Gh - Opis:
- The ZnO-based Schottky diodes revealing a high rectification ratio may be used in many electronic devices. This paper demonstrates several approaches to obtain a ZnO-based Schottky junction with a high rectification ratio. The authors tested several methods such as: post-growth annealing of the ZnO layer, acceptor (nitrogen) doping, as well as the ZnO surface coating with a properly chosen dielectric material. The influence of these approaches on the diode's rectification ratio together with modeling based on the differential approach and thermionic emission theory are presented.
- Źródło:
-
Acta Physica Polonica A; 2011, 120, 6A; A-017-A-021
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł