- Tytuł:
- Detector with High Internal Photocurrent Gain Based on ZnO:N
- Autorzy:
-
Kosyachenko, L. A.
Lashkarev, G. V.
Ievtushenko, A. I.
Lazorenko, V. I.
Sklyarchuk, V. M.
Sklyarchuk, O. F. - Powiązania:
- https://bibliotekanauki.pl/articles/2048107.pdf
- Data publikacji:
- 2011-05
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
81.05.Dz
81.15.-z
85.60.Dw - Opis:
- The photoresponsive structures prepared by magnetron sputtering of ZnO:N on p-Si substrates followed by vacuum evaporation of semi-transparent Ni film on ZnO surface were investigated. The mentioned structures show high sensitivity that sharply enhances with increase of applied voltage. Under a bias 5 V, the responsivities at λ = 390 and 850 nm are equal to 210 A/W and 110 A/W which correspond to the quantum efficiencies of 655 and 165, respectively. It is suggested that the observed high response is attributed to internal gain in phototransistor structure containing Ni/n-ZnO Schottky contact as emitter junction and n-ZnO/p-Si heterostructure as collector junction.
- Źródło:
-
Acta Physica Polonica A; 2011, 119, 5; 681-682
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł