- Tytuł:
- Molecular Beam Epitaxy of Al$\text{}_{x}$Ga$\text{}_{1-x}$Sb and Al$\text{}_{x}$Ga$\text{}_{1-x}$As: New Donor Doping Sources
- Autorzy:
-
Dobaczewski, L.
Missous, M.
Singer, K. E.
Żytkiewicz, Z. R. - Powiązania:
- https://bibliotekanauki.pl/articles/1929771.pdf
- Data publikacji:
- 1993-10
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
68.55.Bd
61.50.Cj
71.55.Eq - Opis:
- The first results obtained with the use of Ga$\text{}_{2}$S$\text{}_{3}$ and Ga$\text{}_{2}$Se$\text{}_{3}$ compounds as sources of donor elements for molecular beam epitaxy of Al$\text{}_{x}$Ga$\text{}_{1-x}$Sb (0 ≤ x ≤ 1) and Al$\text{}_{x}$Ga$\text{}_{1-x}$As (0 ≤ x ≤ 0.4) are reported. In GaAs free electron concentrations obtained when incorporating the donors from these sources can be easily controlled in the range of three orders of magnitude. For Al$\text{}_{x}$Ga$\text{}_{1-x}$Sb it was possible to compensate the high concentration of native acceptors and to obtain n-type of conductivity.
- Źródło:
-
Acta Physica Polonica A; 1993, 84, 4; 826-828
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł