- Tytuł:
- Ultrahigh Frequency Components in the Hot Electron Photomagnetoelectric Response of Strongly Photoexcited Narrow-Gap Semiconductors
- Autorzy:
-
Shatkovskis, E.
Galickas, A.
Kiprijanovič, O. - Powiązania:
- https://bibliotekanauki.pl/articles/2041752.pdf
- Data publikacji:
- 2005-02
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.55.Gs
72.70.Jv
07.57.Yb
42.62.Hk - Opis:
- A photomagnetoelectric effect has been investigated in semiconductors InAs and Cd$\text{}_{x}$Hg$\text{}_{1-x}$Te (x=0.2 and 0.26) excited by Q-switched neodymium-YAG laser. The photomagnetoelectric signal undergos double-sign-inversion when the intensity of the exciting light pulses exceeds a critical value I$\text{}_{c}$=5×10$\text{}^{24}$ photons/(cm$\text{}^{2}$ s) for InAs and (1-4)×10$\text{}^{24}$ photons/(cm$\text{}^{2}$ s) for Cd$\text{}_{x}$Hg$\text{}_{1-x}$Te samples. It is shown that a frequency spectrum of photomagnetoelectric response is broadened significantly in the region of high frequencies. In general three frequency bands were distinguished. From this investigation it follows that using laser pulses of a duration t$\text{}_{opt}$ 1-10 ps the photomagnetoelectric signal in the terahertz range may be generated.
- Źródło:
-
Acta Physica Polonica A; 2005, 107, 2; 271-274
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł