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Wyszukujesz frazę "Sandulov, M." wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł:
Ion Beam Induced Darkening in Tetrahedral Amorphous Carbon Thin Films
Autorzy:
Sandulov, M.
Berova, M.
Tsvetkova, T.
Zuk, J.
Powiązania:
https://bibliotekanauki.pl/articles/1402243.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
81.05.U-
68.55.Ln
42.70.Ln
Opis:
The samples of thin film (d ≈ 40 nm) tetrahedral amorphous carbon (ta-C), deposited by the filtered cathodic vacuum arc have been implanted with N⁺ at a fluence of 3×10¹⁴ cm¯² and ion energy E=20 keV. The induced structural modification of the implanted material results in a considerable change of its optical properties, best manifested by a significant shift of the optical absorption edge to lower photon energies as obtained from optical transmission measurements. This shift is accompanied by a considerable increase of the absorption coefficient (photodarkening effect) in the measured wavelength range (350÷2500 nm). These effects could be attributed to both the additional defect introduction and the increased graphitization, as confirmed by the X-ray photoelectron spectroscopy measurements. The optical contrast thus obtained (between implanted and unimplanted film materials) could be made use of in the area of high-density optical data storage using the focused ion beams.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 953-956
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Ion Beam Induced Surface Modification of ta-C Thin Films
Autorzy:
Berova, M.
Sandulov, M.
Tsvetkova, T.
Kitova, S.
Bischoff, L.
Boettger, R.
Powiązania:
https://bibliotekanauki.pl/articles/1033772.pdf
Data publikacji:
2017-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
carbon
ion implantation
atomic force microscopy
Opis:
Thin film samples (d ≈40 nm) of tetrahedral amorphous carbon (ta-C), deposited by filtered cathodic vacuum arc, were implanted with Ga⁺ at ion energy E =20 keV and ion fluences D=3×10¹⁴-3×10¹⁵ cm¯² and N⁺ with the same energy and ion fluence D=3×10¹⁴ cm¯². The Ga⁺ ion beam induced surface structural modification of the implanted material, displayed by formation of new phase at non-equilibrium condition, which could be accompanied by considerable changes in the optical properties of the ta-C films. The N⁺ implantation also results in modification of the surface structure. The induced structural modification of the implanted material results in a considerable change of its topography and optical properties. Nanoscale topography and structural properties characterisation of the Ga⁺ and N⁺ implanted films were performed using atomic spectroscopy analysis. The observed considerable surface structural properties modification in the case of the higher fluence Ga⁺ implanted samples results from the relatively high concentration of introduced Ga⁺ atoms, which is of the order of those for the host element.
Źródło:
Acta Physica Polonica A; 2017, 132, 2; 299-301
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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