- Tytuł:
- Hydrostatic-Pressure Deep Level Transient Spectroscopy Study of the Heteroantisite Antimony Level in GaAs
- Autorzy:
-
Babiński, A.
Przybytek, J.
Baj, M.
Omling, P.
Samuelson, L.
Słupiński, T. - Powiązania:
- https://bibliotekanauki.pl/articles/1923855.pdf
- Data publikacji:
- 1992-11
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
71.55.Eq
62.50.-p - Opis:
- We present some preliminary results of the first hydrostatic-pressure study of the electronic level related to the Sb-heteroantisite defect in GaAs. We studied two kinds of n-type GaAs samples doped with antimony: bulk samples grown by liquid encapsulated Czochralski method and thin layers grown by metalorganic chemical vapour deposition technique. We found strongly nonlinear pressure dependence of the activation energy of the emission rate for the level. Moreover, the results obtained for the bulk material were fairly different from those obtained for thin metalorganic chemical vapour deposition layers. The possible explanation of this difference is presented.
- Źródło:
-
Acta Physica Polonica A; 1992, 82, 5; 841-844
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł