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Wyszukujesz frazę "Ryoo, H." wg kryterium: Autor


Wyświetlanie 1-2 z 2
Tytuł:
Development of 60 kV, 300 A, 3 kHz Pulsed Power Modulator for Wide Applications
Autorzy:
Ryoo, H.
Jang, S.
Goussev, G.
Rim, G.
Powiązania:
https://bibliotekanauki.pl/articles/1807855.pdf
Data publikacji:
2009-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
84.30.Jc
84.30.Ng
84.30.Sk
Opis:
In this paper, a novel pulsed power generator based on IGBT stacks is proposed for wide pulsed power applications. Because it can generate high voltage pulsed output without any step-up transformer or pulse forming network, it has advantages of fast rising time, easiness of pulse width variation, high repetition rate and rectangular pulse shapes. Proposed scheme consists of multiple power stages which were charged parallel from series resonant power inverter. Depending on the number of power stages it can increase maximum voltage up to 60 kV or higher with no limits of power stages. To reduce component for gate power supply, a simple and robust gate drive circuit which delivers gate power and gate signal simultaneously by way of one high voltage cable is proposed. For gating signal and power a full bridge inverter and pulse transformer generates on-off signals of IGBT gating with gate power simultaneously and it has very good characteristics of protection of IGBT switches over arcing condition. It can be used for various kinds of pulse power application such as plasma source ion implantation, sterilization, water and gas treatment which requires few kHz pulse repetition rate with few to ten of microseconds pulse width.
Źródło:
Acta Physica Polonica A; 2009, 115, 6; 967-970
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
DLC Coatings by $PI^{3}D:$ Low-Voltage žersus High-Voltage Biasing
Autorzy:
Ryoo, H.
Nikiforov, S.
Rim, G.
Shenderey, S.
Oh, H.
Chung, S.
Powiązania:
https://bibliotekanauki.pl/articles/1807961.pdf
Data publikacji:
2009-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
52.77.Dq
68.35.Gy
68.55.-a
78.30.-j
Opis:
Diamond-like carbon (DLC), in particular hydrogenated amorphous carbon (a-C:H) films have been formed on various conductive and dielectric materials by plasma immersion ion implantation and deposition $(PI^{3}D)$ processing. Effect of pulse voltage and other process parameters on the film properties was investigated. It was found that for conductive substrates, a low-voltage ( ≈1 kV), high repetition rate pulsing provides better overall film performance comparing to that obtained by applying higher voltages, which is also favourable for conformal treatment of 3D workpieces. However, short 1-2 μs, high-voltage 5-20 kV pulses are required for dielectric workpieces several millimeter thick. Good film adhesion was achieved by forming a Si-containing buffer layer using hexamethyldisiloxane (HMDSO) as a precursor and a low-voltage pulsing. Roughness and wettability of DLC coatings was found to be controlled by varying the bias specs and sample temperature. Very smooth films with average roughness less than 1 Å were prepared at optimised process parameters.
Źródło:
Acta Physica Polonica A; 2009, 115, 6; 1146-1148
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
    Wyświetlanie 1-2 z 2

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