Informacja

Drogi użytkowniku, aplikacja do prawidłowego działania wymaga obsługi JavaScript. Proszę włącz obsługę JavaScript w Twojej przeglądarce.

English (EN)·Polski (PL)·Yкраїнський (UK)
Przejdź do strony domowej biblioteki Centralna Biblioteka Wojskowa Link otwiera się w nowym oknie Logo biblioteki Prolib Integro - strona głównaCentralna Biblioteka Wojskowa

Wyszukujesz frazę "Ratajczak, R." wg kryterium: Autor

  Lista filtrów
Wyrównaj
Wyświetlanie 1-10 z 33
Tytuł:
Definicja i elementy budowy tzw. czapy gipsowej na przykładzie badań czap struktur solnych Wapna i Mogilna
Definition and structure of a cap-rock based on the investigations of Wapno and Mogilno salt domes
Autorzy:
Jaworska, J.
Ratajczak, R.
Wilkosz, P.
Powiązania:
https://bibliotekanauki.pl/articles/183791.pdf
Data publikacji:
2010
Wydawca:
Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie. Wydawnictwo AGH
Tematy:
czapa gipsowa
wysady solne Wapna i Mogilna
budowa geologiczna
wiek geologiczny
cap-rok
Wapno and Mogilno salt domes
geological structure
geological age
Opis:
Badania tzw. czap gipsowych wysadów solnych Wapna i Mogilna wykazały, że stanowią one złożone obiekty, zarówno ze względu na materiał (skład petrograficzny), jak i na późniejsze etapy ich formowania (ewolucja diagenetyczna, tektoniczna). W skład czap wchodzą: - materiał pochodzący z rozpuszczenia soli kamiennej (rezyduum), - porwaki skał - bezpośredniego otoczenia wysadu solnego oraz towarzyszących soli kamiennej, - zwietrzelina czapy, - brekcje gipsowo-ilaste (różnej genezy), - nowe składniki wytrącone z roztworów krążących w czapie. - dodatkowym problemem jest określenie wieku samej czapy.
Cap-rocks of Wapno and Mogilno salt domes have been investigated. The cap-rock is a complex object, both because of the material (petrographic composition), and the later stages of its formation (diagenetic and tectonic evolution). The cap rock consists of: - material from dissolution of the rock salt (residuum), - detached blocks of rocks surrounding salt dome or accompanying rock salt, - weathering waste of cap-rock, - gypsum-clay breccia (of various genesis), - new minerals precipitated from solutions circulating with the cap-rock. Additional problem is to determine the cap-rock age.
Źródło:
Geologia / Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie; 2010, 36, 4; 505-511
0138-0974
Pojawia się w:
Geologia / Akademia Górniczo-Hutnicza im. Stanisława Staszica w Krakowie
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Defect Transformations in Ion Bombarded InGaAsP
Autorzy:
Ratajczak, R.
Turos, A.
Stonert, A.
Nowicki, L.
Strupiński, W.
Powiązania:
https://bibliotekanauki.pl/articles/1504046.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.43.-j
61.72.-y
81.05.-t
82.80.-d
85.40.-e
Opis:
Damage buildup and defect transformations at temperatures ranging from 15 K to 300 K in ion bombarded InGaAsP epitaxial layers on InP were studied by in situ Rutherford backscattering/channeling measurements using 1.4 MeV $\text{}^4He$ ions. Ion bombardment was performed using 150 keV N ions and 580 keV As ions to fluences ranging from 5 × $10^{12}$ to 6 × $10^{14}$ at./$cm^2$. Damage distributions were determined using the McChasy Monte Carlo simulation code assuming that they consist of randomly displaced lattice atoms and extended defects producing bending of atomic planes. Steep damage buildup up to amorphisation with increasing ion fluence was observed. Defect production rate increases with the ion mass and decreases with the implantation temperature. Parameters of damage buildup were evaluated in the frame of the multi-step damage accumulation model. Following ion bombardment at 15 K defect transformations upon warming up to 300 K have also been studied. Defect migration beginning above 100 K was revealed leading to a broad defect recovery stage with the activation energy of 0.1 eV for randomly displaced atoms and 0.15 eV for bent channels defects.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 136-139
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Tribochemiczna modyfikacja warstwy wierzchniej polimeru w kontakcie ślizgowym z żelazem Armco
The tribochemical modification of the surface layer of a polymer in sliding contact with Armco
Autorzy:
Siciński, M.
Bieliński, D. M.
Grams, J.
Piątkowska, A.
Ratajczak, R.
Powiązania:
https://bibliotekanauki.pl/articles/188113.pdf
Data publikacji:
2010
Wydawca:
Stowarzyszenie Inżynierów i Techników Mechaników Polskich
Tematy:
elastomer
tarcie
modyfikacja
warstwa wierzchnia
friction
modification
surface laye
Opis:
Badano stopień tribochemicznej modyfikacji powierzchni współpracujących w ślizgowym kontakcie ciernym polimer–metal pod kątem obecności jonów metalu przeniesionych do przeciwpróbki. Metodami ToF-SIMS, RBS oraz SEM-EDS potwierdzono obecność jonów żelaza w warstwie wierzchniej wulkanizatów kauczuku butadienowo-styrenowego (SBR) oraz ebonitu współpracujących z żelazem Armco. Powszechnie wiadomo, że jony metali o zmiennej wartościowości działają niczym "trucizna" na gumę, katalizując jej starzenie. Podjęto próbę ilościowej analizy procesu modyfikacji warstwy wierzchniej polimeru, która determinuje warunki współpracy oraz trwałość węzła ciernego guma–metal.
The degree of the tribochemical modification of contact surfaces in a polymer – metal friction pair, taking into account the transfer of iron ions to a polymer counterface, was studied. The presence of iron ions in the surface layer of styrene-butadiene rubber (SBR) vulcanizates and ebonite, rubbed against Armco iron was confirmed by ToF – SIMS, RBS and SEM – EDS analyses. It is commonly known that ions of multiple valence metals are destructive to rubber, facilitating the ageing of the material. An attempt was made to quantitatively analyse the process of the surface modification of polymer, determining working conditions and the durability of the rubber – metal friction pair.
Źródło:
Tribologia; 2010, 5; 245-252
0208-7774
Pojawia się w:
Tribologia
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Channeling Study of Co and Mn Implanted and Thermally Annealed Wide Band-Gap Semiconducting Compounds
Autorzy:
Ratajczak, R.
Werner, Z.
Barlak, M.
Pochrybniak, C.
Stonert, A.
Zhao, Q.
Powiązania:
https://bibliotekanauki.pl/articles/1402209.pdf
Data publikacji:
2015-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.43.-j
61.72.-y
81.05.-t
82.80.-d
85.40.-e
Opis:
The defect build-up, structure recovery and lattice location of transition metals in ion bombarded and thermally annealed ZnO and GaN single crystals were studied by channeled Rutherford backscattering spectrometry and channeled particle-induced X-ray emission measurements using 1.57 MeV ⁴He ions. Ion implantation to a fluence of 1.2×10¹⁶ ions/cm² was performed using 120 keV Co and 120 keV Mn ions. Thermal annealing was performed at 800°C in argon flow. Damage distributions were determined using the Monte Carlo McChasy simulation code. The simulations of channeled Rutherford backscattering spectra reveal that the ion implantation leads to formation of two types of defect structures in ZnO and GaN such as point and extended defects, such as dislocations. The concentrations of both types of defects are at a comparable level in both structures and for both implanted ions. Differences between both implantations appear after thermal annealing where the Mn-doped ZnO reveals much better transition metals substitution and recovery effect.
Źródło:
Acta Physica Polonica A; 2015, 128, 5; 845-848
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Stopping Power and Energy Straggling of Channeled He-Ions in GaN
Autorzy:
Turos, A.
Ratajczak, R.
Pągowska, K.
Nowicki, L.
Stonert, A.
Caban, P.
Powiązania:
https://bibliotekanauki.pl/articles/1504098.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.82.Fk
61.85.+p
68.55.Ln
68.35.Dv
Opis:
GaN epitaxial layers are usually grown on sapphire substrates. To avoid disastrous effect of the large lattice mismatch a thin polycrystalline nucleation layer is grown at 500°C followed by the deposition of thick GaN template at much higher temperature. Remnants of the nucleation layer were visualized by transmission electron microscopy as defect agglomeration at the GaN/sapphire interface and provide a very useful depth marker for the measurement of channeled ions stopping power. Random and aligned spectra of He ions incident at energies ranging from 1.7 to 3.7 MeV have been measured and evaluated using the Monte Carlo simulation code McChasy. Impact parameter dependent stopping power has been calculated for channeling direction and its parameters have been adjusted according to experimental data. For virgin, i.e. as grown, samples, the ratio of channeled to random stopping power is constant and amounts to 0.7 in the energy range studied. Defects produced by ion implantation largely influence the stopping power. For channeled ions the variety of possible trajectories leads to different energy loss at a given depth, thus resulting in much larger energy straggling than that for the random path. Beam energy distributions at different depths have been calculated using the McChasy code. They are significantly broader than those predicted by the Bohr formula for random direction.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 163-166
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Resonant Photoemission Spectroscopy Study on the Contribution of the Yb 4f States to the Electronic Structure of ZnO
Autorzy:
Demchenko, I.
Melikhov, Y.
Konstantynov, P.
Ratajczak, R.
Barcz, A.
Guziewicz, E.
Powiązania:
https://bibliotekanauki.pl/articles/1030972.pdf
Data publikacji:
2018-04
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
77.55.hf
74.25.Jb
33.60.+q
Opis:
The electronic structure of Yb implanted ZnO has been studied by the resonant photoemission spectroscopy. The contribution of the Yb 4f partial density of states is predominant at binding energy about 7.5 and ≈11.7 eV below the VB maximum. At photon energy about 182 eV the multiplet structure around 11.7 eV shows the strongest resonance that corresponds to the ¹I multiplet which is almost exclusively responsible for this resonance, while ³H and ³F states are responsible for the resonance around 7.5 eV. It was also found that the Yb 4f partial density of states distribution shows some similarity to Yb₂O₃.
Źródło:
Acta Physica Polonica A; 2018, 133, 4; 907-909
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Electron Microscopy and X-ray Diffraction Study of AlN Layers
Autorzy:
Kowalczyk, A.
Jagoda, A.
Mücklich, A.
Matz, W.
Pawłowska, M.
Ratajczak, R.
Turos, A.
Powiązania:
https://bibliotekanauki.pl/articles/2035486.pdf
Data publikacji:
2002-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
52.77.Dq
Opis:
AlN nanocrystalline layers and superstructures are used in the modern optoelectronic technology as reflecting mirrors in semiconductor lasers. In the present work the properties of AlN films prepared by sputtering methods from an AlN target in reactive Ar + N plasma were investigated. The characterisation was performed with HRTEM, SEM, glancing angle XRD and RBS methods. The present measurements confirmed the polycrystalline structure of AlN layers and enabled the evaluation of their grain size. The roughness and thickness of the layers were additionally determined by ellipsometric and profilometric measurements.
Źródło:
Acta Physica Polonica A; 2002, 102, 2; 221-225
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
On the Question of Ferromagnetism in Proton and He-Irradiated Carbon
Autorzy:
Szczytko, J.
Juszyński, P.
Teliga, L.
Twardowski, A.
Stonert, A.
Ratajczak, R.
Korman, A.
Powiązania:
https://bibliotekanauki.pl/articles/1811995.pdf
Data publikacji:
2008-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
75.20.Ck
75.50.Dd
Opis:
We tried to repeat the observation of the ferromagnetic response in proton and He-irradiated carbon made by the group of Esquinazi et al. We used $He^+$ and $H^+$ beams focused on graphite sample. The amount of charge deposited in the sample was comparable to the amount of charge used by Esquinazi. Magnetic measurements were performed in SQUID magnetometer. The magnetization of the samples before and after irradiation was compared. We did not observe any ferromagnetic enhancement of magnetization of our irradiated samples. Even if experiment was not the same as Esqinazi's one, we can exclude some of the mechanisms of ferromagnetism proposed by Esquinazi.
Źródło:
Acta Physica Polonica A; 2008, 114, 5; 1387-1390
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Application of nuclear techniques for characterization of materials surfaces : own investigations examples
Autorzy:
Sartowska, B.
Piekoszewski, J.
Waliś, L.
Starosta, W.
Barlak, M.
Nowicki, L.
Ratajczak, R.
Powiązania:
https://bibliotekanauki.pl/articles/146726.pdf
Data publikacji:
2012
Wydawca:
Instytut Chemii i Techniki Jądrowej
Tematy:
conversion electron Mössbauer spectroscopy (CEMS)
nuclear reaction analysis (NRA)
nuclear techniques
surface characterization
surface modification
Opis:
Different methods and techniques for material characterization are often used as a standard procedure for the determination of material properties. Nuclear techniques provide new and more detailed information about the investigated materials. The main goal of the carried out experiments was to improve surface properties including wear, corrosion and high temperature oxidation resistance. Modification processes were carried out using high intensity pulsed plasma beams - HIPPB (106-108 W.cm-2) generated in a rod plasma injector (RPI). In most solid materials such treatment leads to a fast transient melting of the surface layer of the substrate followed by rapid crystallization. Heating and cooling processes are of non-equilibrium type. Initial and modified materials were characterized using different investigation methods including nuclear techniques. Results of the used nuclear techniques such as nuclear reaction analysis (NRA), Rutherford backscattered spectroscopy (RBS) and conversion electron Mössbauer spectroscopy (CEMS) are presented in the paper.
Źródło:
Nukleonika; 2012, 57, 4; 521-528
0029-5922
1508-5791
Pojawia się w:
Nukleonika
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
RBS/Channeling and TEM Study of Damage Buildup in Ion Bombarded GaN
Autorzy:
Pągowska, K.
Ratajczak, R.
Stonert, A.
Turos, A.
Nowicki, L.
Sathish, N.
Jóźwik, P.
Muecklich, A.
Powiązania:
https://bibliotekanauki.pl/articles/1504096.pdf
Data publikacji:
2011-07
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.82.Fk
61.85.+p
68.55.Ln
68.35.Dv
Opis:
A systematic study on structural defect buildup in 320 keV Ar-ion bombarded GaN epitaxial layers has been reported, by varying ion fluences ranged from 5 × $10^{12}$ to 1 × $10^{17}$ at./$cm^2$. 1 μm thick GaN epitaxial layers were grown on sapphire substrates using the metal-organic vapor phase epitaxy technique. Rutherford backscattering/channeling with 1.7 $MeV^4He$ beam was applied for analysis. As a complementary method high resolution transmission electron microscopy has been used. The later has revealed the presence of extended defects like dislocations, faulted loops and stacking faults. New version of the Monte Carlo simulation code McChasy has been developed that makes it possible to analyze such defects on the basis of the bent channel model. Damage accumulation curves for two distinct types of defects, i.e. randomly displaced atoms and extended defects (i.e. bent channel) have been determined. They were evaluated in the frame of the multistep damage accumulation model, allowing numerical parameterization of defect transformations occurring upon ion bombardment. Displaced atoms buildup is a three-step process for GaN, whereas extended defect buildup is always a two-step process.
Źródło:
Acta Physica Polonica A; 2011, 120, 1; 153-155
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-10 z 33

Ta witryna wykorzystuje pliki cookies do przechowywania informacji na Twoim komputerze. Pliki cookies stosujemy w celu świadczenia usług na najwyższym poziomie, w tym w sposób dostosowany do indywidualnych potrzeb. Korzystanie z witryny bez zmiany ustawień dotyczących cookies oznacza, że będą one zamieszczane w Twoim komputerze. W każdym momencie możesz dokonać zmiany ustawień dotyczących cookies