- Tytuł:
- Study of p-Layer Doping Density and Surface Band Bending on the Indium Tin Oxide/Hydrogenated Amorphous Silicon Heterojunction Solar Cells
- Autorzy:
-
Rached, D.
Madani Yssad, H. - Powiązania:
- https://bibliotekanauki.pl/articles/1398948.pdf
- Data publikacji:
- 2015-03
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.61.Jc
71.20.Mq
88.40.hj
88.40.jj - Opis:
- A solar cell (indium tin oxide (ITO)/p-doped amorphous silicon (p-a-Si:H)/intrinsic polymorphous silicon (i-pm-Si:H)/n-doped crystalline silicon (n-c-Si)) simulation, focused on p-layer doping density NA and surface band bending $E_\text{sbb}$ at the interface ITO/p-layer has been performed. Despite the deterioration of p-layer material quality with doping density, the reduced bulk recombination was found to compensate for the increased loss in the p-layer. An increase of p-layer doping density NA and contact barrier height $\phi_{b0}$ (variation of the surface band bending $E_\text{sbb}$) leads to an increase of the efficiency of heterojunction with intrinsic thin layer solar cells.
- Źródło:
-
Acta Physica Polonica A; 2015, 127, 3; 767-769
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł