Autor: Pyragas, V. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Application of Ultrafast Schottky Diodes to High Megahertz Chaotic Oscillators
Autorzy:: Mykolaitis, G.
Tamaševičius, A.
Bumelienė, S.
Namajūnas, A.
Pyragas, K.
Pyragas, V.
Powiązania:: https://bibliotekanauki.pl/articles/1179720.pdf
Data publikacji:: 2005-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 05.45.Ac
05.45.Pq
05.45.-a
47.52.+j
Opis:: The considered chaotic oscillator consists of an amplifier, 2nd order LC resonator, Schottky diode and an extra capacitor in parallel to the diode. The diode plays the role of a nonlinear device. Chaotic oscillations are demonstrated numerically and experimentally at low as well as at high megahertz frequencies, up to 250 MHz.
Źródło:: Acta Physica Polonica A; 2005, 107, 2; 365-368
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Growth and Investigation of $p-La_{2//3}Ca_{1//3}MnO_3$/n-Si Heterostructures
Autorzy:: Anisimovas, F.
Butkutė, R.
Devenson, J.
Maneikis, A.
Stankevič, V.
Pyragas, V.
Vengalis, B.
Powiązania:: https://bibliotekanauki.pl/articles/1813391.pdf
Data publikacji:: 2008-03
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 71.30.+h
73.43.Qt
75.47.Lx
81.15.Fg
Opis:: We report the fabrication and investigation of p-n diode structures based on thin hole-doped $La_{2//3}Ca_{1//3}MnO_3$ films grown on n-type silicon substrates. $La_{2//3}Ca_{1//3}MnO_3$ films with typical thickness of about 400 nm were prepared using pulsed laser deposition. Reflection high-energy electron diffraction measurements revealed polycrystalline quality of $La_{2//3}Ca_{1//3}MnO_3$ thin films on Si substrates. The surface roughness of $La_{2//3}Ca_{1//3}MnO_3$ films investigated by atomic force microscopy was found to be in the range of 25÷30 nm. Studies of electrical properties showed that $La_{2//3}Ca_{1//3}MnO_3$/Si heterostructures exhibit nonlinear asymmetric I-V characteristics both at room temperature and at 78 K. Furthemore, it was shown that these I-V dependences are sensitive to magnetic field, especially at lower voltages.
Źródło:: Acta Physica Polonica A; 2008, 113, 3; 997-1000
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Investigation of Heterostructure Formed from Hole- and Electron-Doped Lanthanum Manganites
Autorzy:: Vengalis, B.
Rosa, A. M.
Devenson, J.
Šliužienė, K.
Lisauskas, V.
Oginskis, A.
Anisimovas, F.
Pyragas, V.
Powiązania:: https://bibliotekanauki.pl/articles/2041760.pdf
Data publikacji:: 2005-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 73.40.Cg
73.40.Lg
75.50.Dd
Opis:: High crystalline quality films of n-La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ce$\text{}_{1}\text{}_{/}\text{}_{3}$ MnO$\text{}_{3}$, p-La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ca$\text{}_{1}\text{}_{/}\text{}_{3}$ MnO$\text{}_{3}$ and related p-n diode structures were grown heteroepitaxially on lattice-matched SrTiO$\text{}_{3}$(100) substrates by dc magnetron sputtering and pulsed laser deposition. The La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ce$\text{}_{1}\text{}_{/}\text{}_{3}$ Mn O$\text{}_{3}$/La$\text{}_{2}\text{}_{/}\text{}_{3}$ Ca$\text{}_{1}\text{}_{/}\text{}_{3}$ MnO$\text{}_{3}$ bilayer was patterned into a strip-like geometry to investigate electrical properties of the interface. Significant magnetoresistance values and nonlinear current-voltage characteristics were indicated for the interface of the p-n diode heterostructure.
Źródło:: Acta Physica Polonica A; 2005, 107, 2; 290-293
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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