- Tytuł:
- Growth of Laser Ablated YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7}$ Thin Films Epitaxied on (100)MgO: Influence of In-Plane Misorientations on Low and High Frequency Properties
- Autorzy:
-
Perrin, A.
Guilloux-Viry, M.
Castel, X. - Powiązania:
- https://bibliotekanauki.pl/articles/1964240.pdf
- Data publikacji:
- 1997-07
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
73.25.+i
81.15.-z
68.55.Jk - Opis:
- The graphoepitaxial growth of c-axis YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7}$ laser ablated thin films on (100)MgO induces a competition between two main in-plane orientations due to the large lattice mismatch: ⟨100⟩ YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7}$ ∥ ⟨100⟩ MgO, c$\text{}_{⊥ 0}$ notation or ⟨110⟩ YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{7}$ ∥ ⟨100⟩ MgO, c$\text{}_{⊥ 45}$ notation. The ratio of c$\text{}_{⊥ 45}$/c$\text{}_{⊥ 0}$ in-plane orientations (η), measured by X-ray diffraction φ scans, is ranging from 0.2% to 49.7% for the films reported here. Their crystalline qualities were compared on the basis of rocking curves (Δθ), electron channeling patterns and reflection high energy electron diffraction diagrams. The coexistence of c$\text{}_{⊥ 0}$ and c$\text{}_{⊥ 45}$ domains creates high angle grain boundaries. No degradation of T$\text{}_{c}$, residual resistance ratio (RRR) or ΔT$\text{}_{c}$ is observed when η increases. In contrast, a strong correlation between microwave losses characterized by surface resistance (R$\text{}_{S}$ at 10 GHz and 77 K), inductive losses S(χ") (surface of the χ" peak obtained in a.c. susceptibility at 119 Hz) and η was clearly evidenced. A minimum of losses was found for η between 3 and 6% suggesting the necessity of a low quantity of high angle grain boundaries for films optimization. Finally, some specific processes carried out recently in order to try to efficiently control η, then R$\text{}_{S}$ are discussed.
- Źródło:
-
Acta Physica Polonica A; 1997, 92, 1; 115-125
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki