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Tytuł:
Band Structure and Refractive Index of Gallium Nitride Under Pressure
Autorzy:
Perlin, P.
Gorczyca, I.
Suski, T.
Teisseyre, H.
Grzegory, I.
Christensen, N.
Powiązania:
https://bibliotekanauki.pl/articles/1891272.pdf
Data publikacji:
1991-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Tn
78.20.Ci
Opis:
The effect of hydrostatic pressure on direct gap and refractive index of GaN is investigated up to 5.5 GPa. Band structure of GaN is calculated by Linear Muffin-Tin Orbitals (LMTO) method for different values of pressure. Resulting pressure coefficient of the main gap and of the refractive index are in a good agreement with the experimental ones.
Źródło:
Acta Physica Polonica A; 1991, 80, 3; 421-424
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Blue Laser on High N$\text{}_{2}$ Pressure-Grown Bulk GaN
Autorzy:
Grzegory, I.
Boćkowski, M.
Krukowski, S.
Łucznik, B.
Wróblewski, M.
Weyher, J.
Leszczyński, M.
Prystawko, P.
Czernecki, R.
Lehnert, J.
Nowak, G.
Perlin, P.
Teisseyre, H.
Purgał, W.
Krupczyński, W.
Suski, T.
Dmowski, L.
Litwin-Staszewska, E.
Skierbiszewski, C.
Łepkowski, S.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/2030423.pdf
Data publikacji:
2001-12
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Opis:
In this note we report briefly on the details of pulsed-current operated "blue" laser diode, constructed in our laboratories, which utilizes bulk GaN substrate. As described in Ref. [1] the substrate GaN crystal was grown by HNPSG method, and the laser structure was deposited on the conducting substrate by MOCVD techniques (for the details see Sec. 2 and Sec. 4 of Ref.~[1], respectively).
Źródło:
Acta Physica Polonica A; 2001, 100, Supplement; 229-232
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Cathodoluminescence Profiling of InGaN-Based Quantum Well Structures and Laser Diodes - In-Plane Instabilities of Light Emission
Autorzy:
Godlewski, M.
Ivanov, V. Yu.
Goldys, E. M.
Phillips, M.
Böttcher, T.
Figge, S.
Hommel, D.
Czernecki, R.
Prystawko, P.
Leszczynski, M.
Perlin, P.
Grzegory, I.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/2036870.pdf
Data publikacji:
2003-06
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Ff
61.72.Mm
68.37.Hk
78.60.Hk
Opis:
Instabilities of light emission and also of stimulated emission in series of GaN epilayers and InGaN quantum well structures, including laser diode structures, are studied. A stimulated emission is observed under electron beam pumping. This enabled us to study light emission properties from laser structures and their relation to microstructure details. We demonstrate large in-plane fluctuations of light emission and that these fluctuations are also present for excitation densities larger than the threshold densities for the stimulated emission.
Źródło:
Acta Physica Polonica A; 2003, 103, 6; 689-694
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Deep-Level Defects in MBE-Grown GaN-Based Laser Structure
Autorzy:
Tsarova, T.
Wosiński, T.
Mąkosa, A.
Skierbiszewski, C.
Grzegory, I.
Perlin, P.
Powiązania:
https://bibliotekanauki.pl/articles/2047691.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.Eq
73.20.Hb
61.72.Lk
81.15.Hi
Opis:
We present results of deep-level transient spectroscopy investigations of defects in a GaN-based heterostructure of a blue-violet laser diode, grown by plasma-assisted molecular beam epitaxy on a bulk GaN substrate. Three majority-carrier traps, T1 at E$\text{}_{C}$ - 0.28 eV, T2 at E$\text{}_{C}$ - 0.60 eV, and T3 at E$\text{}_{V}$ + 0.33 eV, were revealed in deep-level transient spectra measured under reverse-bias conditions. On the other hand, deep-level transient spectroscopy measurements performed under injection conditions, revealed one minority-carrier trap, T4, with the activation energy of 0.20 eV. The three majority-carrier traps were revealed in the spectra measured under different reverse-bias conditions, suggesting that they are present in various parts of the laser-diode heterostructure. In addition, these traps represent different charge-carrier capture behaviours. The T1 trap, which exhibits logarithmic capture kinetics, is tentatively attributed to electron states of dislocations in the n-type wave-guiding layer of the structure. In contrast, the T2, T3, and T4 traps display exponential capture kinetics and are assigned to point defects.
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 331-337
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Epitaxial Layers Versus Bulk Single Crystals of GaN. Temperature Studies of Lattice Parameters and Energy Gap
Autorzy:
Teisseyre, H.
Perlin, P.
Leszczyński, M.
Suski, T.
Dmowski, L.
Grzegory, I.
Porowski, S.
Jun, J.
Moustakas, T. D.
Powiązania:
https://bibliotekanauki.pl/articles/1873040.pdf
Data publikacji:
1995-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
65.70.+y
78.50.Ge
78.66.Fd
Opis:
Gallium nitride epitaxial layer grown by molecular beam epitaxy and bulk crystal grown at high pressure were examined by using X-ray diffraction methods, and by optical absorption at a wide temperature range. The free electron concentration was 6 × 10$\text{}^{17}$ cm$\text{}^{-3}$ for the layer and about 5 × 10$\text{}^{19}$ cm$\text{}^{-3}$ for the bulk crystal. The experiments revealed a different position of the absorption edge and its temperature dependence for these two kinds of samples. The structural examinations proved a significantly higher crystallographic quality of the bulk sample. However, the lattice constants of the samples were nearly the same. This indicated that a rather different electron concentration was responsible for the different optical properties via Burstein-Moss effect.
Źródło:
Acta Physica Polonica A; 1995, 87, 2; 403-406
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Power Continuous Wave Blue InAlGaN Laser Diodes Made by Plasma Assisted MBE
Autorzy:
Skierbiszewski, C.
Siekacz, M.
Wiśniewski, P.
Perlin, P.
Feduniewicz-Żmuda, A.
Cywiński, G.
Smalc, J.
Grzanka, S.
Grzegory, I.
Leszczyński, M.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/2047002.pdf
Data publikacji:
2006-09
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
85.35.Be
42.60.By
73.21.Cd
Opis:
Room temperature, continuous wave operation of InGaN multi-quantum wells laser diodes made by rf plasma assisted molecular beam epitaxy at 411 nm wavelength is demonstrated. The threshold current density and voltage were 4.2 kA/cm$\text{}^{2}$ and 5.3 V, respectively. High optical power output of 60 mW was achieved. The lifetime of these laser diodes exceeds 5 h with 2 mW of optical output power. The laser diodes are fabricated on low dislocation density bulk GaN substrates, at growth conditions which resembles liquid phase epitaxy. We demonstrate that relatively low growth temperatures (600-700°C) pose no intrinsic limitations for fabrication of nitride optoelectronic components by plasma assisted molecular beam epitaxy.
Źródło:
Acta Physica Polonica A; 2006, 110, 3; 345-351
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
High Pressure Freeze-out of Electrons in Undoped GaN Crystal. Proof of Existence of Resonant Donor State (Nitrogen Vacancy)
Autorzy:
Perlin, P.
Teisseyre, H.
Suski, T.
Leszczyński, M.
Grzegory, I.
Jun, J.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/1931916.pdf
Data publikacji:
1995-01
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.55.-i
71.55.Eq
Opis:
We investigated free carriers related optical absorption in GaN in hydrostatic pressures up to 30 GPa. The disappearance of this absorption at pressures close to 18 GPa was explained by trapping electrons resulting from the shift of nitrogen vacancy related donor level into the GaN energy gap at high pressure. We estimated the energetic position of this level at atmospheric pressure to be about 0.8 eV above the conduction band minimum.
Źródło:
Acta Physica Polonica A; 1995, 87, 1; 141-143
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
III-V Semiconducting Nitrides Energy Gap under Pressure
Autorzy:
Perlin, P.
Gorczyca, I.
Teisseyre, H.
Suski, T.
Litwin-Staszewska, E.
Porowski, S.
Grzegory, I.
Christensen, N. E.
Powiązania:
https://bibliotekanauki.pl/articles/1921585.pdf
Data publikacji:
1992-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
71.25.Tn
Opis:
In this paper we present overview of our recent experimental and theoretical results concerning electronic band structure of III-V nitrides under pressure. It is shown here that the pressure coefficients of the direct gap for studied nitrides are surprisingly small. To describe tendency in changes of the gap with pressure we use a simple empirical relation.
Źródło:
Acta Physica Polonica A; 1992, 82, 4; 674-676
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interband Absorption in InGaAs/GaAs Quantum Well at High Hydrostatic Pressure
Autorzy:
Sosin, T. P.
Perlin, P.
Trzeciakowski, W.
Tober, R.
Powiązania:
https://bibliotekanauki.pl/articles/1929745.pdf
Data publikacji:
1993-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
73.20.Dx
Opis:
The interband absorption of strained InGaAs/GaAs multiple quantum well was studied at room temperature for pressures up to 5.5 GPa. Three absorption lines were attributed to the excitonic transitions hh1-e1, lh1-e1 and hh2-e2. They were visible until pressure of about 5 GPa which is above the Γ-X crossover for this system. Pressure coefficients of the observed lines were compared with the literature data. The origin of broadening of the lines above Γ-X crossover is discussed.
Źródło:
Acta Physica Polonica A; 1993, 84, 4; 749-752
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Interplay between Internal and External Electric Field Studied by Photoluminescence in InGaN/GaN Light Emitting Diodes
Autorzy:
Staszczak, G.
Khachapuridze, A.
Grzanka, S.
Czernecki, R.
Piotrzkowski, R.
Perlin, P.
Suski, T.
Powiązania:
https://bibliotekanauki.pl/articles/1492901.pdf
Data publikacji:
2011-11
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.60.Fi
78.67.De
85.60.Bt
85.60.Jb
Opis:
We have studied a series of polar InGaN/GaN light emitting diodes, consisting of either a blue (440-450 nm) quantum well, or combination of blue and violet (410 nm) quantum wells (with indium content 18% and 10%, respectively). The blue quantum well was always placed close to p-type region of the particular LED. We found that the electroluminescence induced by low current is characterized by light emission from the blue quantum well only. In comparison, optical excitation of our LEDs leads to light emission with energies characteristic either for blue and/or violet quantum wells. The corresponding microphotoluminescence spectra evolve depending on external polarization and variable light intensity of excitation supplied by He-Cd laser. Interplay between built-in electric field and externally applied polarization/screening decides about the band structure profiles and thus radiative recombination mechanisms.
Źródło:
Acta Physica Polonica A; 2011, 120, 5; 891-893
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Light Emission Properties of GaN-Based Laser Diode Structures
Autorzy:
Godlewski, M.
Phillips, M. R.
Czernecki, R.
Targowski, G.
Perlin, P.
Leszczyński, M.
Figge, S.
Hommel, D.
Powiązania:
https://bibliotekanauki.pl/articles/2043715.pdf
Data publikacji:
2005-10
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
85.30.-z
78.60.Hk
68.37.Hk
Opis:
Cathodoluminescence is applied for evaluation of in-depth and in-plane variations of light emission from two types of GaN-based laser diode structures. We evaluate in-depth properties of the laser diode emission and demonstrate that potential fluctuations still affect emission of laser diodes for e-beam currents above thresholds for a stimulated emission.
Źródło:
Acta Physica Polonica A; 2005, 108, 4; 675-680
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Luminescence in Highly Excited InGaN/GaN Multiple Quantum Wells Grown on GaN and Sapphire Substrates
Autorzy:
Miasojedovas, S.
Juršėnas, S.
Kurilčik, G.
Žukauskas, A.
Ivanov, V. Yu.
Godlewski, M.
Leszczyński, M.
Perlin, P.
Suski, T.
Powiązania:
https://bibliotekanauki.pl/articles/2038288.pdf
Data publikacji:
2004-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.45.+h
78.47.+p
78.67.De
Opis:
We report on high-excitation luminescence spectroscopy in In$\text{}_{x}$Ga$\text{}_{1-x}$N/GaN multiple quantum wells grown by MOCVD over sapphire and bulk GaN substrates. High excitation conditions enabled us to achieve a screening of the built-in field by free carriers. This allowed for the evaluation of the influence of band potential fluctuations due to the variation in In-content on efficiency of spontaneous and stimulated emission. InGaN/GaN multiple quantum wells grown on bulk GaN substrate exhibit a significantly lower stimulated emission threshold and thus enhanced lateral emission. Transient and dynamic properties of luminescence indicate a significant reduction in compositional disorder in homoepitaxially grown structures
Źródło:
Acta Physica Polonica A; 2004, 106, 2; 273-279
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Optically Pumped Laser Action on Nitride Based Separate Confinement Heterostructures Grown along the (11¯20) Crystallographic Direction
Autorzy:
Teisseyre, H.
Szymański, M.
Khachapuridze, A.
Skierbiszewski, C.
Feduniewicz-Żmuda, A.
Siekacz, M.
Łucznik, B.
Kamler, G.
Kryśko, M.
Suski, T.
Perlin, P.
Grzegory, I.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/2047728.pdf
Data publikacji:
2007-08
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
42.55.Px
78.45.+h
78.66.Fd
Opis:
The intention of this work is to discuss and report on our research on nonpolar laser structures grown on bulk GaN crystal substrates along the (11¯20) nonpolar direction. The main advantages of such nonpolar structures are related to the elimination of the built-in electric fields present in commonly used systems grown along the polar (0001) axis of nitride crystals. We demonstrated the optically pumped laser action on separate confinement heterostructures. Laser action is clearly shown by spontaneous emission saturation, abrupt line narrowing, and strong transversal electric polarization of output light. The lasing threshold was reached at an excitation power density of 260 kW/cm$\text{}^{2}$ for a 700μm long cavity (at room temperature).
Źródło:
Acta Physica Polonica A; 2007, 112, 2; 467-472
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Relationship between Sample Morphology and Carrier Diffusion Length in GaN Thin Films
Autorzy:
Godlewski, M.
Goldys, E. M.
Phillips, M.
Böttcher, T.
Figge, S.
Hommel, D.
Czernecki, R.
Prystawko, P.
Leszczynski, M.
Perlin, P.
Wisniewski, P.
Suski, T.
Bockowski, M.
Grzegory, I.
Porowski, S.
Powiązania:
https://bibliotekanauki.pl/articles/2035593.pdf
Data publikacji:
2002
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
61.72.Ff
61.72.Mm
68.37.Hk
78.60.Hk
Opis:
Scanning and spot-mode cathodoluminescence investigations of homo- and hetero-epitaxial GaN films indicate a surprisingly small influence of their microstructure on overall intensity of a light emission. This we explain by a correlation between structural quality of these films and diffusion length of free carriers and excitons. Diffusion length increases with improving structural quality of the samples, which, in turn, enhances the rate of nonradiative recombination on structural defects, such as dislocations.
Źródło:
Acta Physica Polonica A; 2002, 102, 4-5; 627-632
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Tytuł:
Stimulated Emission from the MBE Grown Homoepitaxial InGaN Based Multiple Quantum Wells Structures
Autorzy:
Ivanov, V.
Godlewski, M.
Miasojedovas, S.
Juršėnas, S.
Kazlauskas, K.
Žukauskas, A.
Skierbiszewski, C.
Siekacz, M.
Leszczyński, M.
Perlin, P.
Suski, T.
Grzegory, I.
Powiązania:
https://bibliotekanauki.pl/articles/1179597.pdf
Data publikacji:
2005-02
Wydawca:
Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:
78.55.Cr
73.21.Fg
72.20.Jv
78.47.+p
Opis:
We report on photoluminescence characterization of InGaN based laser structures grown by homoepitaxial radio frequency plasma-assisted molecular beam epitaxy. Owing to Si doped barriers, the structures show a negligible impact of the built-in electric field, which was proved by excitation intensity dependent and quantum well width dependent luminescence experiments. Relatively low variation in band potential due to inhomogeneous distribution of In was quantitatively estimated from the photoluminescence temperature behavior using Monte Carlo simulation of in-plane carrier hopping and optically detected cyclotron resonance experiments. Efficient stimulated emission with a low threshold for optically pumped laser structures was observed.
Źródło:
Acta Physica Polonica A; 2005, 107, 2; 225-229
0587-4246
1898-794X
Pojawia się w:
Acta Physica Polonica A
Dostawca treści:
Biblioteka Nauki
Artykuł
Wyświetlanie 1-15 z 20

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