- Tytuł:
- Electro-optical performance and anisotropic transport study of a Ga-free type-II superlattice barrier structure
- Autorzy:
-
Bouschet, Maxime
Arounassalame, Vignesh
Ramiandrasoa, Anthony
Perez, Jean-Philippe
Péré-Laperne, Nicolas
Ribet-Mohamed, Isabelle
Christol, Philippe - Powiązania:
- https://bibliotekanauki.pl/articles/2204222.pdf
- Data publikacji:
- 2023
- Wydawca:
- Polska Akademia Nauk. Stowarzyszenie Elektryków Polskich
- Tematy:
-
infrared photodetector
type-II superlattice
barrier structure
Ga-free
transport
anisotropy - Opis:
- In the past ten years, InAs/InAsSb type-II superlattice has emerged as a promising technology for high-temperature mid-wave infrared photodetector. Nevertheless, transport properties are still poorly understood in this type of material. In this paper, optical and electro-optical measurements have been realised on InAs/InAsSb type-II superlattice midwave infrared photodetectors. Quantum efficiency of 50% is measured at 150 K, on the front side illumination and simple pass configuration. Absorption measurement, as well as lifetime measurement are used to theoretically calculate the quantum efficiency thanks to Hovel’s equation. Diffusion length values have been extracted from this model ranging from 1.55 μm at 90 K to 7.44 μm at 200 K. Hole mobility values, deduced from both diffusion length and lifetime measurements, varied from 3.64 cm²/Vs at 90 K to 37.7 cm²/Vs at 200 K. The authors then discuss the hole diffusion length and mobility variations within temperature and try to identify the intrinsic transport mechanisms involved in the superlattice structure.
- Źródło:
-
Opto-Electronics Review; 2023, 31, Special Issue; art. no. e144549
1230-3402 - Pojawia się w:
- Opto-Electronics Review
- Dostawca treści:
- Biblioteka Nauki
Artykuł