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Wyszukujesz frazę "Parker, T." wg kryterium: Autor

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    Wyświetlanie 1-6 z 6
    Tytuł:
    NIST Cesium Fountains - Current Status and Future Prospects
    Autorzy:
    Jefferts, S.
    Heavner, T.
    Parker, T.
    Shirley, J.
    Powiązania:
    https://bibliotekanauki.pl/articles/1814049.pdf
    Data publikacji:
    2007-11
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    06.20.Fn
    32.30.Bv
    32.30.-r
    32.10.Fn
    32.80.Pj
    Opis:
    We review the current status of the U.S. Primary Frequency Standard, NIST-F1. NIST-F1 is a laser-cooled cesium fountain based frequency standard with an inaccuracy of less thanδ f/f<5×$10^{-16}$; limited mainly by the radiation field in the room-temperature fountain (blackbody shift). NIST-F1 is one of the best cesium fountains currently contributing to international atomic time, but has reached a point that it is impractical to improve its accuracy substantially. Therefore we are building a new fountain, imaginatively named NIST-F2, with a cryogenic (77 K) Ramsey interrogation zone that lowers the blackbody shift by several orders of magnitude. NIST-F2 is currently undergoing final assembly, and we will discuss our planned (hoped for) performance, which includes frequency inaccuracy ofδ f/f<1×$10^{-16}$.
    Źródło:
    Acta Physica Polonica A; 2007, 112, 5; 759-767
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    SiGe field effect transistors - performance and applications
    Autorzy:
    Whall, T.E.
    Parker, E.H.C.
    Powiązania:
    https://bibliotekanauki.pl/articles/307664.pdf
    Data publikacji:
    2001
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    SiGe
    FETs
    epitaxy
    circuits
    Opis:
    Recent and encouraging developments in Schotky and MOS gated Si/SiGe field effect transistors are surveyed. Circuit applications are now beginning to be investigated. The authors discuss some of this work and consider future prospects for the role of SiGe field effect devices in mobile communications.
    Źródło:
    Journal of Telecommunications and Information Technology; 2001, 1; 3-11
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    First records of diapsid Palacrodon from the Norian, Late Triassic Chinle Formation of Arizona, and their biogeographic implications
    Autorzy:
    Kiligman, B.T.
    Marsh, A.D.
    Parker, W.G.
    Powiązania:
    https://bibliotekanauki.pl/articles/21091.pdf
    Data publikacji:
    2018
    Wydawca:
    Polska Akademia Nauk. Instytut Paleobiologii PAN
    Opis:
    Vertebrates from the Triassic Period have broadly disparate tooth shapes and dentition patterns, the result of intense morphospace experimentation following the Permo-Triassic extinction. Here, we describe fragmentary tooth-bearing jaw elements of the rare Gondwanan Middle Triassic taxon Palacrodon that represent first occurrences from the Upper Triassic Chinle Formation in northeastern Arizona. These specimens come from two notably diverse macrovertebrate and microvertebrate assemblages, the “coprolite layer” horizon in Petrified Forest National Park, and the Placerias Quarry near St. Johns, Arizona. Palacrodon is diagnosed by the presence of acrodont maxillary and dentary dentition of labiolingually-widened, bulbous teeth, which are fused to one another mesiodistally, and are pyramidal in lateral view. We agree with previous workers and refer Palacrodon to Diapsida based on the presence of a posterior jugal spur and a quadrate that has a quadratojugal foramen and a concave posterior surface. Formerly known only from the Cynognathus Assemblage Zone in southern Africa and Antarctica, the presence of Palacrodon in the Norian of North America represents a temporal range extension of at least 15 million years and represents the first tetrapod genus known to be present in the Karoo Basin, Fremouw Formation, and the Upper Triassic of the southwestern United States. Range extensions such as this suggest that some vertebrate biostratigraphic hypotheses for the Triassic may be less robust than previously believed and subject to significant sampling biases.
    Źródło:
    Acta Palaeontologica Polonica; 2018, 63, 1
    0567-7920
    Pojawia się w:
    Acta Palaeontologica Polonica
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Low frequency noise in Si and Si/SiGe/Si PMOSFETs
    Autorzy:
    Thomas, S. M.
    Prest, M. J.
    Fulgoni, D. J. F.
    Bacon, A. R.
    Grasby, T. J.
    Leadley, D. R.
    Parker, E. H. C.
    Whall, T. E.
    Powiązania:
    https://bibliotekanauki.pl/articles/308779.pdf
    Data publikacji:
    2007
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    electronic noise
    silicon-germanium heterostructures
    MOSFET
    dynamic threshold mode
    Opis:
    Measurements of 1/f noise in Si and Si0.64Ge0.36 PMOSFETs have been compared with theoretical models of carrier tunnelling into the oxide. Reduced noise is observed in the heterostructure device as compared to the Si control. We suggest that this is primarily associated with an energy dependent density of oxide trap states and a displacement of the Fermi level at the SiO2 interface in the heterostructure relative to Si. The present study also emphasizes the important role of transconductance enhancement in the dynamic threshold mode in lowering the input referred voltage noise.
    Źródło:
    Journal of Telecommunications and Information Technology; 2007, 2; 64-68
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    DC and low-frequency noise analysis for buried SiGe channel metamorphic PMOSFETs with high Ge content
    Autorzy:
    Durov, S.
    Mironov, O. A.
    Myronov, M.
    Whall, T. E.
    Parker, E. H. C.
    Hackbarth, T.
    Hoeck, G.
    Herzog, H. J.
    König, U.
    Känel von, H.
    Powiązania:
    https://bibliotekanauki.pl/articles/958103.pdf
    Data publikacji:
    2005
    Wydawca:
    Instytut Łączności - Państwowy Instytut Badawczy
    Tematy:
    SiGe
    metamorphic MOSFET
    LF-noise
    I-V
    C-V
    effective hole mobility
    Opis:
    Measurements of current drive in p-Si1-xGex MOSFETs, with x = 0.7, 0.8 reveal an enhancement ratio of over 2 times as compared to a Si device at an effective channel length of 0.55 žm. They also show a lower knee voltage in the output I-V characteristics while retaining similar values of drain induced barrier lowering, subthreshold swing, and off current for devices with a Sb punch-through stopper. For the first time, we have quantitatively explained the low-frequency noise reduction in metamorphic, high Ge content, SiGe PMOSFETs compared to Si PMOSFETs.
    Źródło:
    Journal of Telecommunications and Information Technology; 2005, 1; 101-111
    1509-4553
    1899-8852
    Pojawia się w:
    Journal of Telecommunications and Information Technology
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
    Tytuł:
    Study of Two-Dimensional Hole Gas at Si/SiGe/Si Inverted Interface
    Autorzy:
    Sadeghzadeh, M. A.
    Mironov, O. A.
    Emeleus, C. J.
    Parry, C. P.
    Phillips, P. J.
    Parker, E. H. C.
    Whall, T. A.
    Powiązania:
    https://bibliotekanauki.pl/articles/1992074.pdf
    Data publikacji:
    1998-09
    Wydawca:
    Polska Akademia Nauk. Instytut Fizyki PAN
    Tematy:
    73.20.Fz
    Opis:
    We have studied the transport properties of a two-dimensional hole gas (2DHG) at the inverted interface of a strained Si$\text{}_{0.8}$Ge$\text{}_{0.2}$ quantum well. By application of a bias voltage to a Schottky gate on top of this inverted heterostructure the 2DHG density n$\text{}_{s}$ can be controlled, in the range of (1.5-5.2)×10$\text{}^{11}$ cm$\text{}^{-2}$. At a temperature T=0.33 K, the Hall mobility is 4650 cm$\text{}^{2}$ V$\text{}^{-1}$ s$\text{}^{-1}$ at the maximum carrier density. For lower sheet densities (n$\text{}_{s}$<2×10$\text{}^{11}$ cm$\text{}^{-2}$) the system undergoes a transition from a weak to strongly localised phase of significantly reduced mobility. From low temperature Shubnikov-de Haas oscillation measurements we have extracted the hole effective masses m*=(0.25 → 0.28)m$\text{}_{0}$ and the ratio of transport to quantum lifetimes α=(0.92 → 0.85) for the corresponding carrier density change of n$\text{}_{s}$=(5.2 → 2.5)×10$\text{}^{11}$ cm$\text{}^{-2}$. These results can be explained in terms of the abnormal movement of the hole wave function towards the interface with decreasing n$\text{}_{s}$, short range interface charge and interface roughness scattering.
    Źródło:
    Acta Physica Polonica A; 1998, 94, 3; 503-508
    0587-4246
    1898-794X
    Pojawia się w:
    Acta Physica Polonica A
    Dostawca treści:
    Biblioteka Nauki
    Artykuł
      Wyświetlanie 1-6 z 6

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