- Tytuł:
- Time-Resolved Transient Grating Spectroscopy for Studies of Nonequilibrium Carrier Dynamics in Wide Band-Gap Semiconductors
- Autorzy:
-
Jarašiūnas, K.
Malinauskas, T.
Neimontas, K.
Gudelis, V.
Aleksiejūnas, R. - Powiązania:
- https://bibliotekanauki.pl/articles/2046917.pdf
- Data publikacji:
- 2006-08
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
72.20.Jv
78.47.+p
78.55.Cr - Opis:
- Using interdisciplinary fields relevant to a highly excited semiconductor - nonequilibrium phenomena in high density plasma, light-induced changes of optical properties, and dynamic holography, we developed time-resolved four-wave mixing technique for monitoring the spatial and temporal carrier dynamics in wide band-gap semiconductors. This opened a new possibility to analyse fast electronic processes in a non-destructive "all-optical" way, i.e. without any electrical contacts. This technique allowed evaluation of recombination and transport processes and the determination of important carrier parameters which directly reveal the material quality: carrier lifetime, bipolar diffusion coefficients, surface recombination rate, nonlinear recombination rate, diffusion length, threshold of stimulated recombination. The recent experimental studies of differently grown group III-nitrides (heterostructures and free standing films) as well silicon carbide epilayers by nondegenerate picosecond four-wave mixing are presented.
- Źródło:
-
Acta Physica Polonica A; 2006, 110, 2; 201-209
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł