Autor: Nargelienė, V. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Peculiarities of Excitonic Photoluminescence in Si δ-Doped GaAs Structures
Autorzy:: Nargelienė, V.
Ašmontas, S.
Čerškus, A.
Gradauskas, J.
Kundrotas, J.
Sužiedėlis, A.
Powiązania:: https://bibliotekanauki.pl/articles/1505529.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.-m
71.35.-y
68.65.-k
Opis:: We present investigation of photoluminescence properties of Si δ-doped GaAs structures at different temperatures and various laser excitation intensities. Strong excitonic emission was observed in the δ-doped structures. The photoluminescence in the infrared region, below excitonic emission, originates from a non-phonon free electron-acceptor e-A transitions and longitudinal optical phonon sidebands of e-A transitions. Possible mechanisms for recombination of photocarriers are discussed, with a particular focus on an enhanced excitonic photoluminescence emission in comparison with that from intrinsic GaAs layers of the same structures.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 177-179
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Enhancement of the Excitonic Photoluminescence in $n^{+}$/i-GaAs by Controlling the Thickness and Impurity Concentration of the $n^{+}$ Layer
Autorzy:: Čerškus, A.
Nargelienė, V.
Kundrotas, J.
Sužiedėlis, A.
Ašmontas, S.
Gradauskas, J.
Johannessen, A.
Johannessen, E.
Powiązania:: https://bibliotekanauki.pl/articles/1505489.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 78.55.-m
71.35.-y
71.55.Eq
Opis:: This communication presents the photoluminescence spectra of molecular beam epitaxially grown GaAs structures made from a 500 nm thick layer of intrinsic conductivity capped with a silicon doped layer with a film thickness ranging from 10 to 100 nm. Two different doping concentrations of the cap layer, $N_{Si} = 10^{17} cm^{-3}$ and $N_{Si} = 10^{18} cm^{-3}$, was considered. The results showed the excitonic line of i-GaAs layer enhancement. The intensity of excitonic line was about 160 times higher for the homojunction compared to the intrinsic conductivity epitaxial layer at liquid helium temperature. Possible mechanisms of the observed intensity enhancement in the $n^{+}$/i-GaAs homojunction are discussed.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 154-157
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: Influence of Magnetic Field on Detection Properties of Planar Microwave Diodes
Autorzy:: Sužiedėlis, A.
Ašmontas, S.
Požela, J.
Gradauskas, J.
Nargelienė, V.
Paškevič, Č.
Derkach, V.
Golovashchenko, R.
Goroshko, E.
Korzh, V.
Anbinderis, T.
Powiązania:: https://bibliotekanauki.pl/articles/1506099.pdf
Data publikacji:: 2011-02
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 07.57.Kp
78.70.Gq
75.47.Pq
73.40.Kp
73.40.-c
75.70.-i
Opis:: The results of experimental investigation of detection properties of the planar microwave diodes of various configuration on DC magnetic field are presented in this paper. The detection of microwave radiation was measured at 51 GHz, 72 GHz and 144 GHz frequencies. The magnetic field was applied in plane and perpendicularly to the plane of the diodes. The experiment was performed at room temperature. Dependence of the detected voltage of the diodes on the magnetic field had asymmetric character with respect to the polarity of the magnetic field. This fact allowed us to suspect the magnetic rectification influencing the detected voltage. Therefore, average value of the detected voltage with respect to the polarity of the applied magnetic field gives its dependence on the applied magnetic field.
Źródło:: Acta Physica Polonica A; 2011, 119, 2; 218-221
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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