Autor: Nadolny, A. J. - Katalog OPAC zbiorów

Skocz do pozycji: 1.

Tytuł:: Contribution of Mn 3d Electrons To the Valence Band of Sn$\text{}_{0.9}$Mn$\text{}_{0.1}$te
Autorzy:: Nadolny, A. J.
Guziewicz, E.
Kowalski, B. J.
Orłowski, B. A.
Johnson, R.
Powiązania:: https://bibliotekanauki.pl/articles/1992049.pdf
Data publikacji:: 1998-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 79.60.-i
71.20.Nr
Opis:: The synchrotron radiation in the energy range between 15 and 70 eV was used to investigate the electronic structure of the crystalline Sn$\text{}_{0.9}$Mn$\text{}_{0.1}$Te by means of the resonant photoemission spectroscopy. Fano-type resonance has been observed in the obtained constant initial energy curves with the resonant energy 50.6 eV and antiresonant energy 49.0 eV. The energy distribution curves taken at photon energies close to the Mn 3p-3d transitions allow us to conclude that Mn atoms contribute to the valence band mainly at energies of 4.0 eV and 7.8 eV below the valence band edge.
Źródło:: Acta Physica Polonica A; 1998, 94, 3; 454-458
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 2.

Tytuł:: Electrical, Magnetic, and Structural Properties of Sn$\text{}_{1-x}$Mn$\text{}_{x}$Te Layers Grown by Molecular Beam Epitaxy
Autorzy:: Nadolny, A. J.
Sadowski, J.
Story, T.
Dobrowolski, W.
Arciszewska, M.
Świątek, K.
Kachniarz, J.
Adamczewska, J.
Powiązania:: https://bibliotekanauki.pl/articles/1992036.pdf
Data publikacji:: 1998-09
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.20.Ck
75.30.Et
68.55.-a
Opis:: Layers of Sn$\text{}_{1-x}$Mn$\text{}_{x}$Te (x ≤ 0.1) with thickness 0.2-2 μm were grown by molecular beam epitaxy on BaF$\text{}_{2}$ substrates with a 0.01-1 μm thick SnTe buffer layer. Both SnTe and Sn$\text{}_{1-x}$Mn$\text{}_{x}$Te layers show metallic p-type conductivity with conducting hole concentrations (at T=77 K) p$\text{}_{77}$=7×10$\text{}^{19}$ -2×10$\text{}^{21}$ cm$\text{}^{-3}$. The layers grown under the conditions of an extra Te flux have a high carrier concentration and exhibit ferromagnetic phase transition at T$\text{}_{C}$ ≤ 7 K. The layers grown with no (or very low) additional Te flux show low carrier concentrations (below 10$\text{}^{20}$ cm$\text{}^{-3}$) and remain paramagnetic in the temperature range studied T=4.5÷70 K.
Źródło:: Acta Physica Polonica A; 1998, 94, 3; 449-453
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

Skocz do pozycji: 3.

Tytuł:: (Eu,Gd)Te - MBE Growth and Characterization
Autorzy:: Dziawa, P.
Taliashvili, B.
Domuchowski, W.
Łusakowska, E.
Arciszewska, M.
Demchenko, I.
Dobrowolski, W.
Dybko, K.
Fedorych, O. M.
Nadolny, A. J.
Osinniy, V.
Petrouchyk, A.
Story, T.
Powiązania:: https://bibliotekanauki.pl/articles/2038228.pdf
Data publikacji:: 2004-08
Wydawca:: Polska Akademia Nauk. Instytut Fizyki PAN
Tematy:: 75.50.Pp
81.15.Hi
Opis:: Monocrystalline thin layers of (Eu,Gd)Te, n-type ferromagnetic semiconductor, were grown by molecular beam epitaxy technique on BaF$\text{}_{2}$ (111) substrates. Reflection high-energy electron diffraction, X-ray diffraction, and atomic force microscopy characterization proved epitaxial mode of growth and high crystal quality of the layers. Magnetic susceptibility and magnetic resonance measurements showed that in (Eu,Gd)Te layers ferromagnetic transition takes place at about 13 K. Electrical characterization carried out by the Hall effect and resistivity measurements revealed very high electron concentration of 10$\text{}^{20}$~cm$\text{}^{-3}$ and sharp maximum of resistivity at transition temperature.
Źródło:: Acta Physica Polonica A; 2004, 106, 2; 215-221
0587-4246
1898-794X
Pojawia się w:: Acta Physica Polonica A
Dostawca treści:: Biblioteka Nauki

Artykuł

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