- Tytuł:
- Thin Film Crystallinity and Substrate Materials in Atomic Graphoepitaxy of YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{x}$
- Autorzy:
-
Miyazawa, S.
Mukaida, M.
Sasaura, M. - Powiązania:
- https://bibliotekanauki.pl/articles/1964236.pdf
- Data publikacji:
- 1997-07
- Wydawca:
- Polska Akademia Nauk. Instytut Fizyki PAN
- Tematy:
-
74.76.Bz
74.80.-g
68.35.-p - Opis:
- The complexity of a-/c-axis oriented growth of YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{x}$ thin films is reviewed from the viewpoint of controlling a-axis preferred thin film growth. Perfectly c-axis in-plane-aligned a-axis oriented YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{x}$ thin films, or "pure" a-axis oriented films, can be grown on the (100) face of tetragonal K$\text{}_{2}$NiF$\text{}_{4}$-type substrates by template growth process. A new growth mechanism called atomic graphoepitaxy is presented as a growth model. Transmission electron microscopy reveals that the films on a (100) SrLaGaO$\text{}_{4}$ substrate consist of domains surrounded by anti-phase and stackingfault boundaries. This domain formation can be well explained by substrate surface irregularities inherent in the SrLaGaO$\text{}_{4}$ crystal. The formation of defects in microstructures in "pure" a-axis oriented YBa$\text{}_{2}$Cu$\text{}_{3}$O$\text{}_{x}$ thin films is also modeled based on our atomic graphoepitaxial growth model.
- Źródło:
-
Acta Physica Polonica A; 1997, 92, 1; 85-96
0587-4246
1898-794X - Pojawia się w:
- Acta Physica Polonica A
- Dostawca treści:
- Biblioteka Nauki
Artykuł